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    Hochdruckbehälter und Verfahren zur Herstellung eines Hochdruckbehälters
    1.
    发明专利
    Hochdruckbehälter und Verfahren zur Herstellung eines Hochdruckbehälters 未知

    公开(公告)号：DE112016005932T5

    公开(公告)日：2018-10-25

    申请号：DE112016005932

    申请日：2016-12-21

    Applicant: NITTA CORP ,  TOYOTA MOTOR CO LTD

    Inventor： TERUHIRA HIROMI ,  KOMUKAI TAKUJI ,  ONIZUKA MAKI ,  NAKAMURA NAOKI ,  ANDO MASAKI

    IPC: F17C1/06 ,  B29C70/16 ,  B29K101/10 ,  B29K105/08 ,  B29L22/00

    Abstract: Es werden ein Hochdruckbehälter mit erhöhter Druckfestigkeit und ein Verfahren zur Herstellung eines solchen Hochdruckbehälters bereitgestellt, wobei der Hochdruckbehälter (10) eine abdichtbare hohle Auskleidung (12) und eine Verstärkungsschicht (14) umfasst, die ein Verbundkohlenstofffaserbündel (16) aufweist, das eine Außenfläche der hohlen Auskleidung (12) bedeckt, wobei die Verstärkungsschicht (14) um die Außenfläche der hohlen Auskleidung (12) herum gewickelt und mit einem gehärteten Produkt aus wärmehärtbarem Harz befestigt ist, und einen Spannungsrelaxationsabschnitt, der das gehärtete Produkt aus wärmehärtbarem Harz und mehreren Kohlenstoffnanoröhren zwischen einer Kohlenstofffaser, die in einem Verbundkohlenstofffaserbündel (16) enthalten ist, und einer Kohlenstofffaser, die in dem anderen Verbundkohlenstofffaserbündel (16) enthalten ist, umfasst.

    COMPOSITE MATERIAL AND MOLDED ARTICLE
    2.
    发明公开
    COMPOSITE MATERIAL AND MOLDED ARTICLE 有权
    VERBUNDSTOFF UNDFORMKÖRPER

    公开(公告)号：EP2990380A4

    公开(公告)日：2016-11-30

    申请号：EP14788527

    申请日：2014-04-23

    Applicant: NITTA CORP

    Inventor： ONIZUKA MAKI ,  KOMUKAI TAKUJI

    IPC: C01B31/02 ,  B82Y30/00 ,  C08J5/04 ,  D06M11/74 ,  D06M101/40

    CPC classification number: D06M11/74 ,  B82Y30/00 ,  C08J5/005 ,  C08J5/042 ,  D06M2101/40

    Abstract: Provided are: a composite material capable of exhibiting the original functions of a base material thereof and also capable of exhibiting functions derived from CNTs, such as electrical conductivity, heat conductivity, and mechanical strength; and a molded article therefrom. A composite material (1) comprising a base material (3) and a structure (7) formed on the surface of the base material (3), the structure (7) including a plurality of carbon nanotubes (5), wherein the plurality of carbon nanotubes (5) form a network structure, in which the carbon nanotubes are directly connected with one another and also directly adhere to the surface of the base material (3).

    Abstract translation: 提供：能够显示其基材的原始功能并且还能够表现出衍生自CNT的功能的复合材料，例如导电性，导热性和机械强度; 和模制品。 1.一种复合材料（1），包括形成在所述基材（3）的表面上的基材（3）和结构体（7），所述结构体（7）包括多个碳纳米管（5），其中， 碳纳米管（5）形成网状结构，其中碳纳米管彼此直接连接并且也直接粘附到基材（3）的表面。

    Cnt network structure and method for producing the same
    6.
    发明专利
    Cnt network structure and method for producing the same 有权
    CNT网络结构及其生产方法

    公开(公告)号：JP2011121787A

    公开(公告)日：2011-06-23

    申请号：JP2009278332

    申请日：2009-12-08

    Applicant: Nitta Corp ,  ニッタ株式会社

    Inventor： YOSHIHARA KUMIKO ,  KOMUKAI TAKUJI ,  SHIMOMOTO ATSUSHI

    IPC: C01B31/02 ,  B82B1/00 ,  B82B3/00 ,  H01B1/04 ,  H01B13/00

    Abstract: PROBLEM TO BE SOLVED: To provide a CNT network structure where electric conductivity is stably maintained and which is excellent as a reinforcing material of a base material.
    SOLUTION: The CNT network structure includes a plurality of CNTs which are a material in which graphite layers have the coaxial tube shape of a single layer or multiple layers. Each CNT has portions where outermost graphite layers are continuously joined each other. The CNT network structure is constituted by the joined portions.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种稳定地保持导电性并且作为基材的增强材料是优异的CNT网络结构。 解决方案：CNT网络结构包括多个CNT，其是石墨层具有单层或多层的同轴管形状的材料。 每个CNT具有最外层石墨层彼此连续接合的部分。 CNT网络结构由接合部构成。 版权所有（C）2011，JPO＆INPIT

    Method for forming thin film of concavo-convex pattern with high aspect ratio
    7.
    发明专利
    Method for forming thin film of concavo-convex pattern with high aspect ratio 审中-公开
    形成具有高比例比例的CONCAVO-CONVEX图案薄膜的方法

    公开(公告)号：JP2011080120A

    公开(公告)日：2011-04-21

    申请号：JP2009234261

    申请日：2009-10-08

    Applicant: Nitta Corp ,  ニッタ株式会社

    Inventor： SHIMOMOTO ATSUSHI ,  KOMUKAI TAKUJI ,  NAGAMORI HIROYUKI

    IPC: C23C14/24 ,  G02B1/02

    Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an inexpensive thin film of a concavo-convex pattern having a high aspect ratio in a short time.
    SOLUTION: The method comprises moving and gathering a plurality of film-forming particles through a migration phenomenon by heating a substrate to form thin film units in a process of forming a film on a substrate surface, and forming a thin film of a concavo-convex pattern with a high aspect ratio on the substrate surface from the plurality of thin film units.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种在短时间内形成具有高纵横比的凹凸图案的廉价薄膜的方法。 解决方案：该方法包括通过在衬底表面上形成膜的过程中加热衬底以形成薄膜单元，通过迁移现象来移动和聚集多个成膜颗粒，并且形成薄膜 在多个薄膜单元的基板表面上具有高纵横比的凹凸图案。 版权所有（C）2011，JPO＆INPIT

    Method for reutilizing silicon substrate after peeling of carbon nanotube
    8.
    发明专利
    Method for reutilizing silicon substrate after peeling of carbon nanotube 审中-公开
    碳纳米管剥离后硅基板的回收方法

    公开(公告)号：JP2011079711A

    公开(公告)日：2011-04-21

    申请号：JP2009234260

    申请日：2009-10-08

    Applicant: Nitta Corp ,  ニッタ株式会社

    Inventor： SHIMOMOTO ATSUSHI ,  KOMUKAI TAKUJI

    IPC: C01B31/02

    Abstract: PROBLEM TO BE SOLVED: To provide a method for reutilizing a substrate after CNT peeling process as a substrate for growing CNT in a short period of time and at a low cost.
    SOLUTION: The method for reutilizing a silicon substrate includes: a process wherein carbon nanotubes are grown by a catalytic reaction of a carbon-containing gas on catalytic metal fine particles provided on a thermal silicon oxide film formed on the surface of the substrate; and a process wherein the grown carbon nanotubes are peeled from the surface of the substrate by a peeling tool or the like, and after those processes, the method further includes: a process for carrying in the silicon substrate after the processes into a high temperature furnace; a process for introducing moisture and oxygen into the high temperature furnace, and a process for setting the temperature in the high temperature furnace to a temperature at which the thermal decomposition of peeling residue and formation of the thermal silicon oxide film are simultaneously performed on the surface of the substrate.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种在CNT剥离工艺后作为用于在短时间内和低成本生长CNT的基板上再利用基板的方法。 解决方案：用于再利用硅衬底的方法包括：通过含碳气体在形成在衬底表面上的热氧化硅膜上提供的催化金属微粒上的催化反应生长碳纳米管的方法 ; 以及其中通过剥离工具等从生长的碳纳米管从基板的表面剥离的方法，并且在这些工艺之后，该方法还包括：将该工艺加工成高温炉 ; 将水分和氧气引入高温炉的方法，以及将高温炉中的温度设定为在表面上同时进行剥离残渣的热分解和热氧化硅膜的形成的温度的工序 的基底。 版权所有（C）2011，JPO＆INPIT

    Method for forming film on article to be film-formed in electron-beam physical vapor deposition apparatus, and electron-beam physical vapor deposition apparatus
    9.
    发明专利
    Method for forming film on article to be film-formed in electron-beam physical vapor deposition apparatus, and electron-beam physical vapor deposition apparatus 审中-公开
    用于形成电子束物理蒸气沉积装置中形成薄膜的薄膜的方法和电子束物理蒸气沉积装置

    公开(公告)号：JP2011046987A

    公开(公告)日：2011-03-10

    申请号：JP2009195031

    申请日：2009-08-26

    Applicant: Nitta Corp ,  ニッタ株式会社

    Inventor： NAGAMORI HIROYUKI ,  KOMUKAI TAKUJI ,  SHIMOMOTO ATSUSHI

    IPC: C23C14/24

    Abstract: PROBLEM TO BE SOLVED: To provide a film-forming method which can form a film with high accuracy in a shortened process period of time, and to provide an EB-PVD apparatus.
    SOLUTION: The film-forming method is a method of forming the film by depositing particles vaporized from an evaporation source 3 onto an article to be film-formed, and includes the steps of: acquiring data of a calibration curve that shows a relationship between a relative reflectance of the formed film based on the reflectance of the article to be film-formed, which has been measured by using a light with a predetermined wavelength, and the change of the film thickness of the formed film; measuring the relative reflectance by making the light incident on and reflect from the formed film; calculating the film thickness of the formed film from the data of the calibration curve and the measured relative reflectance; and feeding back the film thickness obtained by the calculation to the control of the film thickness of the formed film.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种能够在缩短的处理时间内以高精度形成膜的膜形成方法，并提供EB-PVD装置。 解决方案：成膜方法是通过将从蒸发源3蒸发的颗粒沉积到待成膜的物品上而形成膜的方法，包括以下步骤：获取显示为 基于通过使用具有预定波长的光测量的成膜物品的反射率和所形成的膜的膜厚的变化，所形成的膜的相对反射率之间的关系; 通过使光入射并从成形膜反射来测量相对反射率; 根据校准曲线的数据和测量的相对反射率计算形成的膜的膜厚度; 并将通过计算获得的膜厚度反馈到成膜的膜厚度的控制。 版权所有（C）2011，JPO＆INPIT

    Cnt isolated dispersion
    10.
    发明专利
    Cnt isolated dispersion 有权
    CNT分离分散体

    公开(公告)号：JP2012144388A

    公开(公告)日：2012-08-02

    申请号：JP2011002485

    申请日：2011-01-07

    Applicant: Nitta Corp ,  ニッタ株式会社

    Inventor： NAKAI MASUYUKI ,  KOMUKAI TAKUJI ,  YOSHIHARA KUMIKO

    IPC: C01B31/02

    Abstract: PROBLEM TO BE SOLVED: To provide a CNT isolated dispersion being controlled to a desired thixotropy index which does not influence physical properties of a matrix even when the CNT concentration is low, and being able to develop the physical properties of the matrix.SOLUTION: In a solution including CNTs having an average length of 3-8 μm and dispersed with the CNT concentration of 1 wt.% or less, when the development degree of thixotropy is expressed by formula of (TI-1)/C, wherein C is the CNT concentration and TI is the thixotropy index, the CNTs are isolated and dispersed with the development degree of thixotropy of 6.0 or more.

    Abstract translation: 要解决的问题：为了提供将CNT分离的分散体控制到期望的触变指数，即使CNT浓度低，也不影响基体的物理性质，并且能够显现基体的物理性质。 解决方案：在包含平均长度为3-8μm并分散有CNT浓度为1重量％以下的CNT的溶液中，当触变性的显影程度由（TI-1）/ C，其中C为CNT浓度，TI为触变性指数，以触变性显影程度6.0以上分离和分散CNT。 版权所有（C）2012，JPO＆INPIT

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