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1.发明公开公开(公告)号：US20230302403A1
公开(公告)日：2023-09-28
申请号：US17925248
申请日：2021-04-23
Applicant: NITTO DENKO CORPORATION
Inventor： Terukazu IHARA , Shinya NISHIYAMA , Kensuke TANI , Hirokazu MATSUDA , Satoru SUZUKI , Koso MATSUDA , Hiroyuki KATAYAMA
CPC classification number: B01D53/62 , B01D53/75 , B01D2257/504 , B01D2258/06
Abstract: Provided is a carbon-dioxide capture and treatment system comprising: a carbon dioxide-enriched mixture gas generation device comprising a separation membrane capable of increasing a carbon dioxide concentration of a mixture gas taken therein, thereby generating a carbon dioxide-enriched mixture gas; a carbon dioxide conversion device configured to convert carbon dioxide in the enriched mixture gas received from the carbon dioxide-enriched mixture gas generation device, into a chemically stable compound; a final treatment device comprising an adsorbent, wherein the final treatment device is configured to adsorb the carbon dioxide by the adsorbent, thereby separating the carbon dioxide from other gas components; and a carbon dioxide direct capture device configured to take in air contained in an ambient environment, and supply the taken-in air to the final treatment device or an upstream side thereof in the carbon-dioxide capture and treatment system.
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公开(公告)号：US20220177402A1
公开(公告)日：2022-06-09
申请号：US17436983
申请日：2020-03-02
Applicant: NITTO DENKO CORPORATION
Inventor： Hirokazu MATSUDA , Shinya KOTAKE
IPC: C07C51/377
Abstract: The present invention relates to a method for producing a formic acid including, a first step of allowing carbon dioxide and hydrogen to react with each other in a solution containing a solvent and a catalyst dissolved in the solvent and in the presence of an amine insoluble in the solvent, and allowing a generated formic acid to adsorb to the amine, in which the catalyst contains at least one metal element selected from the group consisting of metal elements belonging to Groups 8, 9, and 10 of a periodic table and the amine is an amine immobilized on a solid.
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3.发明申请公开(公告)号：US20250162969A1
公开(公告)日：2025-05-22
申请号：US18841329
申请日：2023-02-22
Applicant: NITTO DENKO CORPORATION
Inventor： Makoto HIRANO , Hirokazu MATSUDA , Masaya SERIU , Evgeny Alexandrovich PIDKO , Georgy Alexandrovich FILONENKO , Christophe REBREYEND
Abstract: The present invention relates to a catalyst reaction method in which in a catalyst reaction using at least one catalyst selected from the group consisting of a metal complex represented by the general formula (1A) described in the specification, a tautomer or stereoisomer of the metal complex, and a salt of the metal complex or the tautomer or stereoisomer, a ligand represented by the general formula (1B) described in the specification is used in such a manner that a ratio of a substance amount of the ligand to a substance amount of the catalyst in a reaction system is greater than 0 to 15.
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公开(公告)号：US20220340420A1
公开(公告)日：2022-10-27
申请号：US17763547
申请日：2020-09-18
Applicant: NITTO DENKO CORPORATION
Inventor： Shinya KOTAKE , Hirokazu MATSUDA , Makoto HIRANO , Terukazu IHARA
Abstract: The present disclosure relates to a hydrogen gas production method including: a first step of generating a mixed gas containing hydrogen and carbon dioxide from a hydrogen storage agent by dehydrogenation reaction using a catalyst in a reactor; a second step of purifying the generated mixed gas to acquire a gas having a high hydrogen concentration; a third step of separating a solution in the reactor into a solution enriched with the catalyst and a permeate using a separation membrane unit; and a fourth step of supplying the solution enriched with the catalyst to the reactor for reusing in the first step.
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公开(公告)号：US20140178677A1
公开(公告)日：2014-06-26
申请号：US14138355
申请日：2013-12-23
Applicant: NITTO DENKO CORPORATION
Inventor： Hirokazu MATSUDA , Haruka ONA
IPC: H01L33/52
CPC classification number: H01L33/52 , B29C43/18 , H01L33/56 , H01L2224/48091 , H01L2933/005 , Y10T428/265 , H01L2924/00014
Abstract: An encapsulating sheet, for encapsulating an optical semiconductor element, includes an embedding layer for embedding the optical semiconductor element, a covering layer disposed at one side in a thickness direction with respect to the embedding layer, and a barrier layer interposed between the embedding layer and the covering layer; having a thickness of 50 μm or more and 1,000 μm or less; and for suppressing a transfer of a component contained in the covering layer to the embedding layer.
Abstract translation: 一种用于封装光学半导体元件的封装片包括：用于嵌入光学半导体元件的嵌入层，相对于嵌入层设置在厚度方向一侧的覆盖层，以及插入在所述嵌入层和 覆盖层; 具有50μm以上且1000μm以下的厚度; 并且用于抑制包含在覆盖层中的组分转移到嵌入层。
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Patent Agency Ranking
6.发明公开公开(公告)号：US20230357120A1
公开(公告)日：2023-11-09
申请号：US18043960
申请日：2021-08-30
Applicant: NITTO DENKO CORPORATION
Inventor： Hirokazu MATSUDA , Daisuke FUOKA , Makoto HIRANO , Evgeny Alexandrovich PIDKO , Georgy Alexandrovich FILONENKO , Christophe REBREYEND
CPC classification number: C07C51/15 , B01J31/2409 , B01J2531/821
Abstract: The invention relates to a method for producing a formate, the method including reacting hydrogen with carbon dioxide, a hydrogen carbonate or a carbonate using a catalyst in the presence of a solvent, wherein the reaction is a two-phase system in which an organic solvent and an aqueous solvent are present in a separated state in the solvent, and the catalyst is at least one selected from a ruthenium complex represented by the formula (1) in the specification, a tautomer or stereoisomer thereof, and a salt compound of the complex, tautomer or stereoisomer.
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7.发明申请ENCAPSULATING SHEET, OPTICAL SEMICONDUCTOR DEVICE, AND PRODUCING METHOD THEREOF 有权封装片，光学半导体器件及其制造方法公开(公告)号：US20140145230A1
公开(公告)日：2014-05-29
申请号：US14079789
申请日：2013-11-14
Applicant: NITTO DENKO CORPORATION
Inventor： Hirokazu MATSUDA , Haruka ONA , Yasunari OOYABU
CPC classification number: H01L33/56 , C08G77/12 , C08G77/16 , C08G77/20 , C08L83/06 , C09D183/14 , H01L33/50 , H01L33/52 , H01L33/62 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2924/181 , H01L2933/005 , Y10T428/31663 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: An encapsulating sheet, for encapsulating an optical semiconductor element mounted on a board by a wire-bonding connection, includes an embedding layer for embedding the optical semiconductor element and a wire and a cover layer covering the embedding layer. The embedding layer and the cover layer contain a catalyst containing a transition metal and are prepared from a silicone resin composition that is cured by accelerating a reaction by the catalyst. The ratio of the concentration of the transition metal in the cover layer to that of the transition metal in the embedding layer is 1 or more. The length from an interface between the embedding layer and the cover layer to a portion of the wire that is positioned closest to the cover layer-side is 150 μm or more.
Abstract translation: 一种用于封装通过引线接合连接安装在基板上的光半导体元件的封装片，包括用于嵌入光半导体元件的嵌入层和覆盖该嵌入层的导线和覆盖层。 包埋层和覆盖层含有含有过渡金属的催化剂，并由通过加速催化剂的反应固化的有机硅树脂组合物制备。 覆盖层中的过渡金属的浓度与嵌入层中的过渡金属的浓度的比例为1以上。 从嵌入层和覆盖层之间的界面到位于最靠近覆盖层侧的线的一部分的长度为150μm以上。
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公开(公告)号：US20230147963A1
公开(公告)日：2023-05-11
申请号：US17912203
申请日：2021-02-26
Applicant: NITTO DENKO CORPORATION
Inventor： Makoto HIRANO , Terukazu IHARA , Hirokazu MATSUDA
CPC classification number: C07C51/00 , B01D61/02 , B01J31/40 , B01J2531/821 , B01J2531/827 , B01J2531/842 , B01J2531/847 , B01J2531/845
Abstract: The present invention relates to a formate production method including: a first step of producing a formate by causing a reaction between carbon dioxide and hydrogen in a solution containing a solvent, a catalyst dissolved in the solvent, and a metal salt or an organic salt; and a second step of separating, by a separation membrane, the catalyst from a reaction solution obtained in the first step, in which the catalyst contains at least one metal element selected from the group consisting of metal elements belonging to Group 8, Group 9, and Group 10 of a periodic table.
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公开(公告)号：US20140106487A1
公开(公告)日：2014-04-17
申请号：US14140817
申请日：2013-12-26
Applicant: NITTO DENKO CORPORATION
Inventor： Kazuya FUJIOKA , Hirokazu MATSUDA , Koji AKAZAWA
IPC: H01L33/52
CPC classification number: H01L33/52 , H01L23/295 , H01L23/296 , H01L23/3135 , H01L33/507 , H01L2924/0002 , H01L2933/005 , H01L2933/0091 , H01L2924/00
Abstract: The present invention relates to a sheet-shaped, optical-semiconductor encapsulating material including: a first resin layer containing inorganic particles; and a second resin layer containing a phosphor and being superposed directly or indirectly on the first resin layer, and relates to a kit for optical-semiconductor encapsulation including: a sheet-shaped molded body including a first resin layer containing inorganic particles; and a sheet-shaped molded body including a second resin layer containing a phosphor.
Abstract translation: 本发明涉及一种片状光半导体封装材料，包括：含有无机颗粒的第一树脂层; 以及包含荧光体并且直接或间接叠置在第一树脂层上的第二树脂层，并且涉及一种用于光学半导体封装的套件，包括：包括含有无机颗粒的第一树脂层的片状成型体; 以及包含含有荧光体的第二树脂层的片状成型体。
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公开(公告)号：US20240351867A1
公开(公告)日：2024-10-24
申请号：US18685584
申请日：2022-08-09
Applicant: NITTO DENKO CORPORATION
Inventor： Makoto HIRANO , Hirokazu MATSUDA
CPC classification number: C01B3/22 , B01J31/0239 , B01J31/2295 , B01J2231/76 , B01J2523/51 , B01J2523/821 , C01B2203/1064
Abstract: The present invention relates to a method for producing hydrogen, in which hydrogen is generated from a formate using a metal catalyst in the presence of a solvent by a two-phase system reaction in which the solvent is present in a state where an organic phase and an aqueous phase are separated.
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