公开(公告)号：WO2017037333A1

公开(公告)日：2017-03-09

申请号：PCT/FI2016/050550

申请日：2016-08-05

Applicant: NOKIA TECHNOLOGIES OY

Inventor： COTTON, Darryl ,  LIU, Yinglin ,  ROBINSON, Adam ,  BESSONOV, Aleksander ,  WHITE, Richard

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/12 ,  H01L29/06 ,  H01L29/16 ,  G01N27/414 ,  H01L31/028 ,  H01L31/0352

CPC classification number: H01L29/1606 ,  G01N27/4146 ,  H01L29/0653 ,  H01L29/127 ,  H01L29/41725 ,  H01L29/4238 ,  H01L29/66045 ,  H01L29/778 ,  H01L31/028 ,  H01L31/112 ,  Y02E10/547

Abstract: A method and apparatus, the method comprising: forming a layer of two dimensional material (23), in particular graphene, on a first release layer; forming, possibly a (gate) insulating layer (35), and at least two, preferably three, electrodes (25); forming a second release layer overlaying at least a portion of the layer of two dimensional material; providing a mouldable polymer (24, 26, 28) overlaying the at least two electrodes and the second release layer; and removing the first and second release layers to provide a cavity (29) between the mouldable polymer (26) and the layer of two dimensional material (23).

Abstract translation: 一种方法和装置，所述方法包括：在第一释放层上形成二维材料层（23），特别是石墨烯; 形成（栅极）绝缘层（35），以及至少两个，优选三个电极（25）; 形成覆盖所述二维材料层的至少一部分的第二释放层; 提供覆盖所述至少两个电极和所述第二释放层的可模制聚合物（24,26,28）; 以及去除所述第一和第二释放层以在所述可模制聚合物（26）和所述二维材料层（23）之间提供空腔（29）。

公开(公告)号：WO2017025661A1

公开(公告)日：2017-02-16

申请号：PCT/FI2016/050549

申请日：2016-08-05

Applicant: NOKIA TECHNOLOGIES OY

Inventor： ROBINSON, Adam ,  COTTON, Darryl ,  BESSONOV, Aleksander ,  WHITE, Richard ,  LIU, Yinglin

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/778 ,  H01L29/417 ,  H01L29/10 ,  G01N27/414 ,  H01L29/423 ,  H01L29/45

CPC classification number: H01L29/778 ,  G01N27/414 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/8256 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66045

Abstract: A method comprising: • growing a layer of channel material (1101), preferably graphene, on a growth wafer (1112) to form a channel member, the growth wafer comprising a layer of catalyst material (1111) separated from a carrier wafer (1112) by a layer of release material (1113), the catalyst material serving as a seed layer for growing the layer of channel material; • depositing a layer of polymeric material (1102) over the formed channel member to form a supporting substrate for the layers of catalyst and channel material; • etching the layer of release material (1113) to remove the release material (1113) and carrier wafer (1112); and • patterning the layer of catalyst material (1111) to form source and drain electrodes (1116) configured to enable a flow of electrical current through the channel member.

Abstract translation: 一种方法，包括：在生长晶片（1112）上生长通道材料层（1101），优选石墨烯以形成通道构件，所述生长晶片包括从载体晶片（1112）分离的催化剂材料层（1111） ）通过一层释放材料（1113），所述催化剂材料用作用于生长所述通道材料层的种子层; •在所形成的通道构件上沉积聚合物材料层（1102），以形成催化剂和通道材料层的支撑衬底; •蚀刻释放材料层（1113）以去除释放材料（1113）和载体晶片（1112）; 以及•图案化所述催化剂材料层（1111）以形成被配置为使得能够流过所述通道构件的电流的源极和漏极（1116）。