公开(公告)号：WO2017072400A1

公开(公告)日：2017-05-04

申请号：PCT/FI2016/050701

申请日：2016-10-07

Applicant: NOKIA TECHNOLOGIES OY

Inventor： BESSONOV, Alexander ,  COTTON, Darryl ,  ROBINSON, Adam

IPC: H01L31/173 ,  H01L27/28

CPC classification number: H01L31/173 ,  A61B5/02433 ,  A61B5/14552 ,  A61B5/6826 ,  A61B2562/0233 ,  A61B2562/0238 ,  A61B2562/12

Abstract: An apparatus (201) comprises a light emitter (202) and a photodetector (203) formed on a single fluid-permeable substrate (206) such that the photodetector (203) is able to detect light emitted by the light emitter (202) after interaction of the light with a user of the apparatus (201). The photodetector comprises a channel member (207) which may be made from graphene, respective source and drain electrodes (208, 209), a layer of photosensitive material (210) configured to vary the flow of electrical current through the channel member (207) on exposure to light from the light emitter (202), and a gate electrode (211). The apparatus (201) further comprises a layer of fluid-impermeable dielectric material (212) configured to inhibit a flow of electrical current between the channel member (207) and the gate electrode (211) of the photodetector (203) to enable the electrical conductance of the channel member (207) to be controlled by a voltage applied to the gate electrode (211) and to inhibit exposure of the light emitter (202) to fluid which has permeated through the fluid-permeable substrate (206). The layer of fluid-impermeable dielectric material (212) allows resilient substrates made from polymeric material to be used without the risk of damage to the overlying components caused by the permeated fluid. The dual functionality of the layer of fluid-impermeable dielectric material (212) reduces the number of fabrication steps used to form the apparatus (201) and results in a thinner, more compact device.

Abstract translation: （201）包括形成在单个流体可渗透基底（206）上的光发射器（202）和光检测器（203），使得光检测器（203）能够检测发射的光 在所述光与所述设备（201）的用户相互作用之后由所述光发射器（202）提供。 光检测器包括可由石墨烯制成的通道构件（207），相应的源电极和漏电极（208,209），被配置为改变通过通道构件（207）的电流流动的光敏材料层（210） 在暴露于来自光发射器（202）的光时，以及栅电极（211）。 装置（201）还包括一层流体不可渗透的介电材料（212），其被配置为抑制沟道构件（207）和光电探测器（203）的栅电极（211）之间的电流流动，以使电 通过施加到栅电极（211）的电压来控制沟道构件（207）的电导，并且防止光发射体（202）暴露于已经透过流体可渗透基底（206）的流体。 流体不可渗透的电介质材料层（212）允许使用由聚合物材料制成的弹性基底，而不存在由渗透流体引起的对上覆部件造成损坏的风险。 流体不可渗透的介电材料层（212）的双重功能减少了用于形成设备（201）的制造步骤的数量并且导致更薄，更紧凑的设备。

公开(公告)号：WO2017118777A1

公开(公告)日：2017-07-13

申请号：PCT/FI2016/050850

申请日：2016-12-02

Applicant: NOKIA TECHNOLOGIES OY

Inventor： BESSONOV, Alexander ,  ALLEN, Mark ,  WHITE, Richard

IPC: H01L27/144 ,  H01L27/146

CPC classification number: H01L27/14665 ,  H01L27/1443 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14696

Abstract: An apparatus comprising a stack formed from outer first and second electrode layers and an intermediate third electrode layer, with a memristive layer positioned between the outer first and intermediate third electrode layers and a photoactive layer positioned between the outer second and intermediate third electrode layers, wherein the outer first and second electrode layers are connected to a power supply to enable the application of a voltage to the memristive layer to change its resistance when the photoactive layer is exposed to incident electromagnetic radiation, and wherein the outer first and intermediate third electrode layers are connected to a readout circuit to enable the resistance of the memristive layer to be determined, the resistance of the memristive layer providing an indication of one or more of the presence and magnitude of the incident electromagnetic radiation.

Abstract translation: 包括由外第一和第二电极层以及中间第三电极层形成的叠层的装置，其中忆阻层位于外第一和中间第三电极层之间，光敏层位于外 第二和中间第三电极层，其中外部第一和第二电极层连接到电源，以使得当光敏层暴露于入射电磁辐射时，能够向忆阻层施加电压以改变其电阻，并且其中， 外部第一和中间第三电极层连接到读出电路以使得能够确定忆阻层的电阻，忆阻层的电阻提供入射电磁辐射的存在和量值中的一个或多个的指示。 / p>

公开(公告)号：WO2017051068A1

公开(公告)日：2017-03-30

申请号：PCT/FI2016/050626

申请日：2016-09-12

Applicant: NOKIA TECHNOLOGIES OY

Inventor： BESSONOV, Alexander ,  ROBINSON, Adam ,  COTTON, Darryl ,  WHITE, Richard

IPC: H01L31/112 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0352

CPC classification number: H01L31/028 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/112 ,  Y02E10/547

Abstract: A photodetector (400) has a two dimensional conductive channel (302, 408) with source and drain electrodes (404) configured to enable a flow of electrical current through the two dimensional conductive channel (302, 408); and a quantum dot layer (304, 406) overlying the two dimensional conductive channel (302, 408), the quantum dot layer (304, 406) configured to generate charge on exposure to incident electromagnetic radiation (310), the generated charge producing an electric field which causes a change in electrical current passing through the underlying two dimensional conductive channel (302, 408), the change in electrical current being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation (310); wherein the quantum dot layer (304, 406) is configured to have an incident electromagnetic radiation surface (312) which has a texturing comprising undulations in the surface to provide a surface roughness with an average peak amplitude (308) of the order of between 10nm and 300nm. The surface texture increases the amount of electromagnetic radiation absorbed in the quantum dot layer (304, 406) in comparison to a photodetector having a flat (non-textured) incident electromagnetic radiation surface.

Abstract translation: 光电检测器（400）具有二维导电通道（302,408），源极和漏极电极（404）被配置为使电流流过二维导电通道（302,408）; 以及覆盖所述二维导电通道（302,408）的量子点层（304,406），所述量子点层（304,406）被配置为在暴露于入射电磁辐射（310）时产生电荷，所产生的电荷产生 导致通过下面的二维导电通道（302,408）的电流变化的电场，电流的变化指示入射电磁辐射（310）的存在和大小中的一个或多个; 其中所述量子点层（304,406）被配置为具有入射电磁辐射表面（312），所述入射电磁辐射表面具有在所述表面中包含起伏的纹理，以提供具有10nm量级的平均峰值幅度（308）的表面粗糙度 和300nm。 与具有平坦（非纹理）入射电磁辐射表面的光电检测器相比，表面纹理增加了量子点层（304,406）中吸收的电磁辐射的量。

公开(公告)号：WO2017060564A1

公开(公告)日：2017-04-13

申请号：PCT/FI2016/050652

申请日：2016-09-21

Applicant: NOKIA TECHNOLOGIES OY

Inventor： ALLEN, Mark ,  WEI, Di ,  BESSONOV, Alexander

IPC: G01N27/12 ,  G01D5/16 ,  G01D3/10

CPC classification number: G01D5/16 ,  G01D3/10 ,  G01N27/121

Abstract: An apparatus comprising a detection circuit and an associated reference circuit, each circuit comprising a power source coupled to a memristor via a resistive sensor, the power source configured to apply a voltage to the memristor to switch the memristor from a first resistance state to a second resistance state when the resistive sensor is exposed to a physical stimulus, wherein the power source of the detection circuit is configured to have a discharge rate which is dependent upon the physical stimulus whilst the power source of the associated reference circuit is configured to have a discharge rate which is not dependent upon the physical stimulus, the resulting difference in discharge rates between the respective power sources allowing the timing of the physical stimulus to be determined based on whether or not the respective memristors of the detection and associated reference circuits have both switched.

Abstract translation: 一种包括检测电路和相关联的参考电路的装置，每个电路包括经由电阻传感器耦合到忆阻器的电源，电源被配置为向忆阻器施加电压以将忆阻器从第一电阻状态切换到第二电阻状态 当电阻传感器暴露于物理刺激时，电阻状态，其中检测电路的电源被配置为具有取决于物理刺激的放电速率，而相关参考电路的电源被配置为具有放电 不依赖于物理刺激的速率，根据检测和相关联的参考电路的各个忆阻器是否都进行了切换，导致能够确定物理刺激的定时的相应电源之间的放电速率的差异。

公开(公告)号：WO2017187018A1

公开(公告)日：2017-11-02

申请号：PCT/FI2017/050318

申请日：2017-04-27

Applicant: NOKIA TECHNOLOGIES OY

Inventor： ALLEN, Mark ,  RØNNOW, Troels ,  BITAULD, David ,  BESSONOV, Alexander

IPC: G06K9/00 ,  G06K9/20

CPC classification number: G06K9/00885 ,  G06K2009/00932

Abstract: An apparatus, method and computer program wherein the apparatuscomprises:a plurality of quantum dot-graphene field effect transistors;circuitry configured to provide an individual drain-source bias voltage to each of a plurality of quantum dot-graphene field effect transistors, wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; andcircuitry configured to obtain output signals from each of a plurality of quantum dot-graphene field effect transistors where the output signal is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus.

Abstract translation: 一种装置，方法和计算机程序，其中该装置包括：多个量子点 - 石墨烯场效应晶体管;被配置为向多个量子点 - 石墨烯场效应晶体管中的每一个提供单独的漏极 - 源极偏置电压的电路， 石墨烯场效应晶体管，其中不同的各个漏极 - 源极偏置电压具有不同的参数，以使所述多个量子点 - 石墨烯场效应晶体管能够检测来自装置的用户的光; 以及电路，被配置为从多个量子点 - 石墨烯场效应晶体管中的每一个获得输出信号，其中输出信号取决于由量子点 - 石墨烯场效应晶体管检测的光以及漏极 - 源极偏置电压与 使获得的输出信号能够用作设备用户的加扰识别信号。

公开(公告)号：WO2017081361A1

公开(公告)日：2017-05-18

申请号：PCT/FI2016/050748

申请日：2016-10-25

Applicant: NOKIA TECHNOLOGIES OY

Inventor： BESSONOV, Alexander ,  ALLEN, Mark

IPC: G01D5/16 ,  H01G7/06 ,  G06F3/00

CPC classification number: G06F3/00 ,  G01D21/02 ,  H01G7/06

Abstract: An apparatus comprising: a primary sensor and one or more secondary sensors; a memristor; and a power supply, wherein the primary sensor and one or more secondary sensors are configured to sense different physical stimuli when connected to a power supply, and wherein the primary sensor and one or more secondary sensors are coupled to the memristor such that exposure of the primary sensor to its respective stimulus causes the memristor to switch from a high resistance state to a low resistance state resulting in connection of the power supply to the one or more secondary sensors to enable the sensing of their respective stimuli.

Abstract translation: 一种设备，包括：主传感器和一个或多个次传感器; 忆阻器; 以及电源，其中主传感器和一个或多个次传感器被配置为当连接到电源时感测不同的物理刺激，并且其中主传感器和一个或多个次传感器耦合到忆阻器，使得暴露 主传感器与其各自的刺激引起忆阻器从高电阻状态切换到低电阻状态，导致电源连接到一个或多个辅助传感器，以使得能够感测它们各自的刺激。

公开(公告)号：WO2017060563A1

公开(公告)日：2017-04-13

申请号：PCT/FI2016/050651

申请日：2016-09-21

Applicant: NOKIA TECHNOLOGIES OY

Inventor： ALLEN, Mark ,  WEI, Di ,  BESSONOV, Alexander

IPC: H02J7/00 ,  G01N27/26

CPC classification number: G01N27/122 ,  H01M10/46 ,  H02J7/0068

Abstract: An apparatus comprising a rechargeable power source coupled to a memristor via a resistive sensor, the rechargeable power source configured to apply a voltage to the memristor to switch the memristor from a first resistance state to a second resistance state when the resistive sensor is exposed to a physical stimulus, the apparatus further comprising an optical indicator configured to provide an optical indication of the resistance state of the memristor and thus one or more of the presence and magnitude of the physical stimulus, and a voltage enabler configured to enable application of a voltage to the optical indicator to enable said optical indication when sensor readout is required, wherein the apparatus is configured such that the voltage applied to the optical indicator also allows recharging of the rechargeable power source.

Abstract translation: 一种装置，包括经由电阻传感器耦合到忆阻器的可再充电电源，所述可再充电电源被配置为当所述电阻式传感器暴露于所述阻尼传感器时，将所述电抗器施加到所述忆阻器上以将所述忆阻器从第一电阻状态切换到第二电阻状态 所述装置还包括光学指示器，所述光学指示器被配置为提供所述忆阻器的电阻状态的光学指示，并且因此提供所述物理刺激的一个或多个存在和幅度，以及电压使能器，其被配置为使得能够施加电压 所述光学指示器在需要传感器读出时启用所述光学指示，其中所述装置被配置为使得施加到所述光学指示器的电压也允许所述可再充电电源的再充电。

公开(公告)号：EP3239895A1

公开(公告)日：2017-11-01

申请号：EP16167377.7

申请日：2016-04-28

Applicant: Nokia Technologies Oy

Inventor： ALLEN, Mark ,  RØNNOW, Troels ,  BITAULD, David ,  BESSONOV, Alexander

IPC: G06K9/00 ,  G06K9/20

CPC classification number: G06K9/00885 ,  G06K2009/00932

Abstract: An apparatus, method and computer program wherein the apparatus comprises: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide an individual drain-source bias voltage to each of a plurality of quantum dot-graphene field effect transistors, wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from each of a plurality of quantum dot-graphene field effect transistors where the output signal is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus.

Abstract translation: 一种装置，方法和计算机程序，其中该装置包括：多个量子点 - 石墨烯场效应晶体管; 被配置为向多个量子点 - 石墨烯场效应晶体管中的每一个提供单独漏极 - 源极偏置电压的电路，其中不同个体漏极 - 源极偏置电压具有不同的参数，以使所述多个量子点 - 石墨烯场效应晶体管能够 检测来自装置的用户的光; 以及配置成从多个量子点 - 石墨烯场效应晶体管中的每一个获得输出信号的电路，其中输出信号取决于由量子点 - 石墨烯场效应晶体管检测到的光以及漏极 - 源极偏置电压 以使获得的输出信号能够用作设备用户的加扰识别信号。