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    AN ARRAY APPARATUS AND ASSOCIATED METHODS
    1.
    发明申请
    AN ARRAY APPARATUS AND ASSOCIATED METHODS 审中-公开
    一种阵列装置和相关方法

    公开(公告)号：WO2017182696A1

    公开(公告)日：2017-10-26

    申请号：PCT/FI2017/050169

    申请日：2017-03-15

    Applicant: NOKIA TECHNOLOGIES OY

    Inventor： ALLEN, Mark ,  VOUTILAINEN, Martti ,  KALLIOINEN, Sami

    IPC: H04N5/374 ,  H04N5/367

    Abstract: An apparatus comprising an array of field-effect transistors, each field-effect transistor comprising a channel, source and drain electrodes configured to enable a flow of electrical current through the channel, and a gate electrode configured to enable the flow of electrical current to be varied, the gate electrode separated from the channel by a dielectric material configured to inhibit a flow of electrical current between the channel and gate electrode, wherein the gate electrode of each field-effect transistor is connected in parallel to the gate electrodes of the other field-effect transistors in the array, and wherein a respective two-terminal current-limiting component is coupled to each gate electrode such that, in the event that a defect in the dielectric material of a particular field-effect transistor allows a leakage current to flow between the channel and gate electrode of that field-effect transistor, the respective two-terminal current-limiting component limits the magnitude of the leakage current so that the other field-effect transistors in the array are substantially unaffected by the leakage current.

    Abstract translation: 包括场效应晶体管阵列的装置，每个场效应晶体管包括沟道，配置成使电流能够流过沟道的源电极和漏电极，以及配置成 使得能够改变电流的流动，所述栅电极通过介电材料与所述沟道分离，所述介电材料被配置为抑制所述沟道和栅电极之间的电流流动，其中每个场效应晶体管的栅电极并联连接 连接到阵列中的其他场效应晶体管的栅电极，并且其中相应的两端限流组件耦合到每个栅电极，使得在特定场效应晶体管的电介质材料中的缺陷的情况下， 场效应晶体管允许泄漏电流在该场效应晶体管的沟道和栅极之间流动，相应的两端限流组件li 与漏电流的大小相匹配，使得阵列中的其他场效应晶体管基本上不受漏电流影响。

    AN APPARATUS AND METHOD OF FORMING A SENSOR ARRAY USING THE APPARATUS
    2.
    发明申请
    AN APPARATUS AND METHOD OF FORMING A SENSOR ARRAY USING THE APPARATUS 审中-公开
    一种使用该装置形成传感器阵列的装置和方法

    公开(公告)号：WO2017072407A1

    公开(公告)日：2017-05-04

    申请号：PCT/FI2016/050740

    申请日：2016-10-21

    Applicant: NOKIA TECHNOLOGIES OY

    Inventor： POHJONEN, Helena ,  KALLIOINEN, Sami ,  KORPINEN, Pekka

    IPC: G01D18/00 ,  H01L27/14 ,  H04N5/33 ,  H04N5/335

    CPC classification number: G01D18/008 ,  H01L27/14607 ,  H01L27/14647 ,  H04N5/3696 ,  H04N5/374 ,  H04N17/002

    Abstract: An apparatus and method, the apparatus comprising: a plurality of sensors;readout circuitry configured to read information from each of the plurality of sensors; and wherein the apparatus has identifier information and calibration information stored with the identifier information and the apparatus is configured to be coupled to at least one other apparatus to form an array of apparatus.

    Abstract translation: 一种设备和方法，所述设备包括：多个传感器;读取电路，被配置为从所述多个传感器中的每一个读取信息; 并且其中所述设备具有与所述标识符信息一起存储的标识符信息和校准信息，并且所述设备被配置为耦合到至少一个其他设备以形成设备阵列。

    A QUANTUM DOT PHOTODETECTOR APPARATUS AND ASSOCIATED METHODS
    3.
    发明申请
    A QUANTUM DOT PHOTODETECTOR APPARATUS AND ASSOCIATED METHODS 审中-公开
    量子点光电探测器装置及相关方法

    公开(公告)号：WO2017149195A1

    公开(公告)日：2017-09-08

    申请号：PCT/FI2017/050108

    申请日：2017-02-20

    Applicant: NOKIA TECHNOLOGIES OY

    Inventor： KALLIOINEN, Sami ,  VOUTILAINEN, Martti

    IPC: H01L31/0352 ,  G01J1/16 ,  H01L27/146 ,  H01L31/113

    Abstract: An apparatus comprising at least one pair of a first inner andsecond outer photodetector, each photodetector comprising a channel member, respective source and drain electrodes configured to enable a flow of electrical currentthrough the channel member between the source and drain electrodes, and a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation to produce a detectable change in the electrical current flowing through the channel member. The first inner and second outer photodetectorsare configured to generate electron-hole pairs which produce an increase and decrease in electrical current through the channel members. The first inner and the second outer photodetectorssharea common channel member, which ispartitioned by one or more of the respective source and drain electrodes respectively extending in two dimensions such that the first inner photodetector is defined within the second outer photodetector.

    Abstract translation: 包括至少一对第一内部和第二外部光电检测器的设备，每个光电检测器包括沟道构件，相应的源极和漏极电极被配置为使电流能够通过沟道构件在源极和漏极之间 漏极和多个量子点，所述多个量子点构造成在暴露于入射电磁辐射时产生电子 - 空穴对，以产生流过所述沟道构件的电流的可检测变化。 第一内部和第二外部光电探测器被配置为产生电子 - 空穴对，其产生通过通道构件的电流的增加和减少。 第一内部和第二外部光电探测器区公共信道部件，其分别由各自的源极和漏极中的一个或多个分别在二维上延伸，使得第一内部光电检测器被限定在第二外部光电检测器内。

    QUANTUM DOT SENSOR READOUT
    5.
    发明申请
    QUANTUM DOT SENSOR READOUT 审中-公开
    量子传感器读数

    公开(公告)号：WO2016151185A1

    公开(公告)日：2016-09-29

    申请号：PCT/FI2016/050125

    申请日：2016-03-02

    Applicant: NOKIA TECHNOLOGIES OY

    Inventor： VOUTILAINEN, Martti ,  KALLIOINEN, Sami

    IPC: H04N5/374 ,  H04N5/335

    CPC classification number: H04N5/37455 ,  H01L27/142 ,  H01L27/14643 ,  H01L31/035218 ,  H01L31/112 ,  H04N5/335 ,  H04N5/378

    Abstract: An apparatus, comprising a quantum dot graphene field effect transistor configured to operate in such a way that photons incident thereon cause electron-hole pairs to be formed;a connector element connected to the back gate of the quantum dot graphene field effect transistor;a switch element configured to function as an output switch in order to provide an output for a current flowing through the quantum dot graphene field effect transistor; wherein the quantum dot graphene field effect transistor is configured to be back gate biased via the connector element connected to the back gate in such a way that the electrons or the holes formed are trapped in an at least one quantum dot and respectively the holes or the electrons migrate to the channel of the quantum dot field effect transistor; and wherein a drain to source voltage connected to the quantum dot graphene field effect transistor causes a current proportional to the charge of the holes or electrons trapped at the quantum dots by the electrons or holes to flow in the channel.

    Abstract translation: 一种装置，包括量子点石墨烯场效应晶体管，其被配置为使得入射到其上的光子使得形成电子 - 空穴对;连接到量子点石墨烯场效应晶体管的背栅的连接器元件;开关 元件被配置为用作输出开关，以便为流过量子点石墨烯场效应晶体管的电流提供输出; 其中量子点石墨烯场效应晶体管被配置为经由连接到背栅的连接器元件被反向栅极偏置，使得形成的电子或空穴被捕获在至少一个量子点中，并且分别地孔或 电子迁移到量子点场效应晶体管的沟道; 并且其中连接到量子点石墨烯场效应晶体管的漏极 - 源极电压导致与通过电子或空穴捕获在量子点处的空穴或电子的电荷在通道中流动成比例的电流。

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