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Patent Agency Ranking
公开(公告)号：MX384528B
公开(公告)日：2025-03-14
申请号：MX2018012784
申请日：2018-10-18
Applicant: NOKIA TECHNOLOGIES OY
Inventor： ALLEN MARK , VOUTILAINEN MARTTI , KALLIOINEN SAMI
Abstract: Un aparato que comprende una red de transistores de efecto de campo, comprendiendo cada transistor de efecto de campo un canal, electrodos de fuente y drenaje configurados para habilitar un flujo de corriente eléctrica a través del canal y un electrodo de compuerta configurado para permitir variar el flujo de corriente eléctrica, el electrodo de compuerta separado del canal mediante un material dieléctrico configurado para inhibir un flujo de corriente eléctrica entre el canal y el electrodo de compuerta, en donde el electrodo de compuerta de cada transistor de efecto de campo está conectado en paralelo a los electrodos de compuerta de los otros transistores de efecto de campo en la red, y en donde un respectivo componente de limitación de corriente de dos terminales está acoplado a cada electrodo de compuerta de tal forma que, en el caso de que un defecto en el material dieléctrico de un transistor de efecto de campo particular permita que una corriente de fuga fluya entre el canal y el electrodo de compuerta de ese transistor de efecto de campo, el respectivo componente de limitación de corriente de dos terminales limita la magnitud de la corriente de fuga de modo que los otros transistores de efecto de campo en la red no se ven afectados sustancialmente por la corriente de fuga.
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公开(公告)号：PH12018502239A1
公开(公告)日：2019-08-19
申请号：PH12018502239
申请日：2018-10-19
Applicant: NOKIA TECHNOLOGIES OY
Inventor： ALLEN MARK , VOUTILAINEN MARTTI , KALLIOINEN SAMI
Abstract: An apparatus comprising an array of field-effect transistors, each field-effect transistor comprising a channel, source and drain electrodes configured to enable a flow of electrical current through the channel, and a gate electrode configured to enable the flow of electrical current to be varied, the gate electrode separated from the channel by a dielectric material configured to inhibit a flow of electrical current between the channel and gate electrode, wherein the gate electrode of each field-effect transistor is connected in parallel to the gate electrodes of the other field-effect transistors in the array, and wherein a respective two-terminal current-limiting component is coupled to each gate electrode such that, in the event that a defect in the dielectric material of a particular field-effect transistor allows a leakage current to flow between the channel and gate electrode of that field-effect transistor, the respective two-terminal current-limiting component limits the magnitude of the leakage current so that the other field-effect transistors in the array are substantially unaffected by the leakage current.
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公开(公告)号：EP3180886A4
公开(公告)日：2018-04-25
申请号：EP14899654
申请日：2014-08-13
Applicant: NOKIA TECHNOLOGIES OY
Inventor： VOUTILAINEN MARTTI
CPC classification number: H04L9/3278 , G01N21/1702 , G01N21/3581 , G09C1/00 , H01L29/16 , H04L2209/12
Abstract: Apparatus, electronic device, system and method comprising a first element (102) configured to receive a first signal and convert the first signal to a second signal, a second element (104) configured to relay the second signal to a third element (106, 108), the third element (106, 108) being configured to convert the second signal to a third signal and to send the third signal; wherein the first element (102) is configured to convert the first signal to the second signal in such a way that the conversion is dependent on the physio-chemical structure of at least part of the first element (102). In some embodiments the first element comprises a photoacoustic sensor comprising at least one graphene layer, the second element comprises a mechanical wave transmission line, and the third element comprises carbon nanotube antennas.
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公开(公告)号：EP2673805A4
公开(公告)日：2017-12-20
申请号：EP12744509
申请日：2012-02-03
Applicant: NOKIA TECHNOLOGIES OY
Inventor： VOUTILAINEN MARTTI , ROUVALA MARKKU , PASANEN PIRJO
CPC classification number: G01J1/42 , G01J1/0488 , G01J3/513
Abstract: In accordance with an example embodiment of the present invention, an apparatus is provided, including a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a pre-amplifier for the photodetecting structure, where the graphene field effect transistor is vertically integrated to the photodetecting structure.
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公开(公告)号：EP2974014A4
公开(公告)日：2016-11-02
申请号：EP13877847
申请日：2013-03-11
Applicant: NOKIA TECHNOLOGIES OY
Inventor： VOUTILAINEN MARTTI
IPC: H03H9/15 , H01L41/08 , H03H3/02 , H03H9/02 , H03H9/24 , H03H9/46 , H03H9/54 , H03H9/70 , H03J1/06
CPC classification number: H03J1/06 , H01L41/193 , H01Q1/50 , H03H3/02 , H03H9/02244 , H03H9/02409 , H03H9/2436 , H03H9/2457 , H03H9/2463 , H03H9/462 , H03H9/70 , H03H2003/027 , H03H2009/155
Abstract: There are disclosed various apparatuses and methods for tuning a resonance frequency. In some embodiments there is provided an apparatus (200) comprising at least one input electrode (202, 204) for receiving radio frequency signals; a graphene foil (210) for converting at least part of the radio frequency signals into mechanical energy; at least one dielectric support element (212) to support the graphene foil (210) and to space apart the at least one input electrode (202, 204) and the graphene foil (210). The graphene foil (210) has piezoelectric properties. In some embodiments there is provided a method comprising receiving radio frequency signals by at least one input electrode (202, 204) of an apparatus (200); providing a bias voltage to the apparatus (200) for tuning the resonance frequency of the apparatus (200); and converting at least part of the radio frequency signals into mechanical energy by a graphene foil (210) having piezoelectric properties.
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