公开(公告)号：WO2018132135A1

公开(公告)日：2018-07-19

申请号：PCT/US2017/051032

申请日：2017-09-11

Applicant: NORTHEASTERN UNIVERSITY

Inventor： HAO, Ji ,  KAR, Swastik ,  JUNG, Yung, Joon ,  RUBIN, Daniel

IPC: G01N27/70

Abstract: Ultrasensitive, miniaturized, and inexpensive ion and ionizing radiation detection devices are provided. The devices include an insulating substrate, metallic contact pads disposed on a surface of the substrate, and a strip of an ultrathin two-dimensional material having a thickness of one or a few atomic layers. The strip is in contact with the contact pads, and a voltage is applied across the two-dimensional sensor material. Individual ions contacting the two-dimensional material alter the current flowing through the material and are detected. The devices can be used in a network of monitors for high energy ions and ionizing radiation.

公开(公告)号：WO2018039329A1

公开(公告)日：2018-03-01

申请号：PCT/US2017/048191

申请日：2017-08-23

Applicant: NORTHEASTERN UNIVERSITY

Inventor： VARGAS, Anthony ,  LIU, Fangze ,  LANE, Christopher, Adrian ,  RUBIN, Daniel ,  KAR, Swastik ,  BANSIL, Arun ,  BUDA, Gianina ,  HENNIGHAUSEN, Zachariah

IPC: C30B25/00 ,  C30B29/46 ,  C30B30/00 ,  C30B33/02 ,  C30B33/04 ,  H01L21/02 ,  C30B25/02 ,  C30B29/68

CPC classification number: C30B29/46 ,  C30B25/02 ,  C30B29/68 ,  C30B30/00 ,  C30B33/02 ,  C30B33/04 ,  G11B7/1369 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/0262

Abstract: Heterocrystals of metal dichalcogenides and Bi 2 S 3 , Bi 2 Se 3 or Bi 2 Te 3 are presented, in which the metal dichalcogenides and Bi 2 S 3 , Bi 2 Se 3 or Bi 2 Te 3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be reconfigured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Abstract translation: 金属二硫属元素化物和Bi 2 S 3：Bi 2 Se 3的异构晶体， 或Bi 2 Te 3 3，其中金属二硫属元素化物和Bi 2 S 3：Bi _{3 3 > 2 Se 3或Bi 2 Te 3不会大部分保留其独立性质。 这些异质晶体表现出电子和光学变化，这使它们对于超硅电子器件和光电子器件具有吸引力。 特别地，这些异质晶体可以以允许位写入和图案绘制的方式重新配置。 介绍了这些异质晶体的实施方案，形成这些异质晶体的方法，重新配置异质晶体的方法，信息存储装置，光电子电路和光子晶体。}

公开(公告)号：WO2018144069A1

公开(公告)日：2018-08-09

申请号：PCT/US2017/051027

申请日：2017-09-11

Applicant: NORTHEASTERN UNIVERSITY

Inventor： KAR, Swastik ,  HAO, Ji ,  RUBIN, Daniel ,  JUNG, Yung, Joon

IPC: G01N27/70 ,  H01J41/02 ,  H01J47/02 ,  H01J49/02 ,  B32B5/16 ,  B82Y40/00

Abstract: lon-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 10 14 carriers/cm 2 . A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.