公开(公告)号：GB2517224A

公开(公告)日：2015-02-18

申请号：GB201400087

申请日：2014-01-03

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： LIM CHENG GUAN ,  WEMAN HEIGE

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/0735

Abstract: A photovoltaic device comprising at least one nanowire structure fixed to a substrate, wherein each of the at least one nanowire structures comprise: a heavily doped p-type core 120 having a proximal end fixed to the substrate 110 and a distal end extending away from the substrate 110; and a n-type shell 130 around the p-type core 120. Also disclosed is a method of forming the above photovoltaic device comprising growing the above core 120 and shell 130 on the substrate 110. The p-type core 120 may be formed of GaAs and the n-type shell 130 may comprise AlxGa(1-x)As where x is less than or equal to 0.2. The n-type shell 130 may have a thickness of between 20nm and 50nm, preferably 30nm. The p-type core 120 may have a diameter greater than 300nm. The length of the at least one nanowire structure may be between 5µm and 7µm, preferably 6µm. The substrate 110 may comprise silicon, it may comprise a graphitic layer.

公开(公告)号：GB2517234A

公开(公告)日：2015-02-18

申请号：GB201406860

申请日：2014-04-16

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： LIM CHENG GUAN ,  WEMAN HEIGE

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/0735

Abstract: A photovoltaic device comprising at least one nanowire structure fixed to a substrate, wherein each of the at least one nanowire structures comprise: a heavily doped p-type core 120 having a proximal end fixed to the substrate 110 and a distal end extending away from the substrate 110; and a n-type shell 130 around the p-type core 120. Also disclosed is a method of forming the above photovoltaic device comprising growing the above core 120 and shell 130 on the substrate 110. The p-type core 120 may be formed of GaAs and the n-type shell 130 may comprise AlxGa(1-x)As where x is less than or equal to 0.2. The n-type shell 130 may have a thickness of between 20nm and 50nm, preferably 30nm. The p-type core 120 may have a diameter greater than 300nm. The length of the at least one nanowire structure may be between 5µm and 7µm, preferably 6µm. The substrate 110 may comprise silicon, it may comprise a graphitic layer.