公开(公告)号：US20140106551A1

公开(公告)日：2014-04-17

申请号：US14107780

申请日：2013-12-16

Applicant: NanoGram Corporation

Inventor： Uma Srinivasan ,  Xin Zhou ,  Henry Hieslmair ,  Neeraj Pakala

IPC: H01L21/22

CPC classification number: H01L21/22 ,  H01L21/2255 ,  H01L21/228 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

Abstract: Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.

Abstract translation: 基于激光的工艺单独使用或组合使用以有效地处理半导体和/或当前采集结构的掺杂域。 例如，掺杂剂可以使用激光束从裸硅/锗表面驱动到硅/锗半导体层中。 已经发现深层接触对于生产高效太阳能电池是有效的。 电介质层可以被有效地构图以提供集电器和沿着半导体表面的掺杂区域之间的选择的接触。 快速处理方法适用于高效的生产工艺。