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公开(公告)号：JPH01240826A
公开(公告)日：1989-09-26
申请号：JP6898188
申请日：1988-03-23
Applicant: NAT SPACE DEV AGENCY , KOKUSAI KAGAKU SHINKO ZAIDAN
Inventor： YAMAGA EIZO , MORIYAMA TAKASHI , KOIZUMI TAMISUKE
IPC: G01J1/02 , H01L27/14 , H01L27/148 , H01L31/0264 , H01L31/10 , H01L31/109
Abstract: PURPOSE:To improve sensitivity by simple constitution without requiring the electric field of the outside, by successively laminating an Si1-xGex intermediate layer and an Si-crystal film on an Si-crystal substrate and changing the doping amount of the impurity in the intermediate layer in the lamination direction. CONSTITUTION:An Si1-xGex crystal film is formed on an N-type Si-crystal substrate 1 as an intermediate layer and an N-type Si-crystal film 3 is further formed thereon. The doping amount of the impurity in the Si1-xGex crystal film 2 being the intermediate layer is increased toward the N-type Si-crystal film 3 in the laminating direction of the laminated constitution, that is, from the side of the N-type Si-crystal substrate and an internal electric field is generated in the conductive zone of the intermediate layer.
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公开(公告)号：JPS61129400A
公开(公告)日：1986-06-17
申请号：JP24970684
申请日：1984-11-28
Applicant: Nat Space Dev Agency
Inventor： SHIMODAIRA KATSUYUKI , MORIYAMA TAKASHI , YAMAWAKI KOJI
CPC classification number: G01S3/7867
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公开(公告)号：JPH01243480A
公开(公告)日：1989-09-28
申请号：JP7080888
申请日：1988-03-24
Applicant: NAT SPACE DEV AGENCY , KOKUSAI KAGAKU SHINKO ZAIDAN
Inventor： YAMAGA EIZO , HASEGAWA FUMIO , MORIYAMA TAKASHI , KOIZUMI TAMISUKE
IPC: G01J1/02 , H01L27/148 , H01L31/0248 , H01L31/0264 , H01L31/0312 , H01L31/108 , H01L31/18
Abstract: PURPOSE:To obtain photoelectric sensibility effective to infrared rays up to a longer wavelength by using the mixed-crystal p-type Si1-xGex of P-type Si and Ge as a semiconductor. CONSTITUTION:An infrared sensor employs a metal-semiconductor rectifying contact, and a p-type Si1-xGex mixed crystal is used as a semiconductor. That is, the mixed-crystal thin-film of Si and Ge is epitaxial-grown onto an Si substrate in a Schottky junction, and the wavelength of infrared rays having effective photoelectric sensibility is made longer than that of a conventional Pt-P-type Si Schottky junction by utilizing the reduction of forbidden band width due to the mixing of Ge and the decrease of the height of the trouble of the Schottky junction with the reduction of forbidden band width. Accordingly, the height of trouble determining the threshold wavelength of photoelectric sensibility to infrared rays is further lowered, thus acquiring the infrared sensor having photoelectric sensibility effective up to a longer wavelength.
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公开(公告)号：JPS6355423A
公开(公告)日：1988-03-09
申请号：JP19809986
申请日：1986-08-26
Applicant: NAT SPACE DEV AGENCY
Inventor： FUKUDA MINORU , MORIYAMA TAKASHI
Abstract: PURPOSE:To obtain a high resolution sensor having a high performance by adding a simple means, by providing an instantaneous visual field correcting means on an image pickup element, so that conversion of an instantaneous visual field to the image pickup element, which follows up a movement of a flying object is not generated. CONSTITUTION:In a period in which a unit picture element of an image pickup element 1 is executing an image pickup of a visual field A, namely, until the time immediately before a time point t0+(a) from a time point t0, even if the element 1 moves by an instantaneous visual field correcting optical system 2, an instantaneous visual field to its unit picture element is not converted. Also, it is held as its visual field A, and in a signal read-out period to the time point t0+(a), image information of the visual field A is outputted. Simultaneously, the instantaneous visual field to the unit picture element is converted stepwise to a visual field B, and enters into the next image pickup period from the time point t0+(a). Also, in the same way as a first period, in the image pickup period extending from the time point t0+(a) to the time point t0+2a, the instantaneous visual field is held as t he visual field B, and in a signal read-out field B is outputted. Thereafter, in the same way, the image pickup can be executed continuously.
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公开(公告)号：JPS6247523A
公开(公告)日：1987-03-02
申请号：JP18750885
申请日：1985-08-28
Applicant: NAT SPACE DEV AGENCY
Inventor： SHIMODAIRA KATSUYUKI , YAMAWAKI KOJI , MORIYAMA TAKASHI
Abstract: PURPOSE:To obtain a two-axis scanning mirror light in weight and with easy scanning control by low electric power by arranging plural reflecting mirrors cylindrically while varying their inclination in the axial direction by the prescribed angle each in order. CONSTITUTION:In case of rotating a rotary polyhedron type two axis scanning mirror 11 at a fixed low speed, a reflecting mirror 11-1 first scans the object in the east and west directions at the angle of view corresponding to the number thereof, the electromagnetic wave from the object is detected by a detector 15 to perform the prescribed image pick-up in the territory in the south-north width. The reflecting mirror 11-2 inclined at theta deg. in the south direction for the mirror 11-1, then picks up an image by scanning the south territory adjacent to the scanned zone of the object in the east-west direction. Similarly the different territory adjacent to the object is scanned in order by each reflecting mirror 11-3...11-n and the image pick-up is completed by performing the scanning of the whole body of the object. And when the number of reflecting mirrors and inclination are adequately set according to the number of picture elements of the detector and the angle of visibility and resolution for the object, the two dimensional scanning of the whole objects can be performed by the rotation around the center axis of the mirror 11.
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Patent Agency Ranking
公开(公告)号：GB2217106A
公开(公告)日：1989-10-18
申请号：GB8906524
申请日：1989-03-21
Applicant: NAT SPACE DEV AGENCY , FOUND ADVANCEMENT INT SCIENCE
Inventor： YAMAKA EISO , MORIYAMA TAKASHI , KOIZUMI TOMISUKE
IPC: G01J1/02 , H01L27/14 , H01L27/148 , H01L31/0264 , H01L31/10 , H01L31/109
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公开(公告)号：FR2629274B1
公开(公告)日：1994-02-25
申请号：FR8903782
申请日：1989-03-22
Applicant: NAT SPACE DEV AGENCY , FOUND ADVANCEMENT INT SCIENCE
Inventor： YAMAKA EISO , HASEGAWA FUMIO , MORIYAMA TAKASHI , KOIZUMI TAMISUKE
IPC: G01J1/02 , H01L27/148 , H01L31/0248 , H01L31/0264 , H01L31/0312 , H01L31/108 , H01L31/18 , H01L31/02 , H04N5/33
Abstract: An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si1-XGeX epitaxial layer grown on a p-type substrate, wherein the character X denotes a Ge atomic fraction and wherein X increases from zero to a predetermined upper limit in a direction away from the Si substrate toward the metal. The metal may be selected from the group of Pt, an alloy of Pt and Si, and an alloy of Pt, Si, and Ge. In addition, the metal may also be selected from the group of Ir, an alloy of Ir and Si, and an alloy of Ir, Si, and Ge.
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公开(公告)号：GB2216716B
公开(公告)日：1992-07-15
申请号：GB8905844
申请日：1989-03-14
Applicant: NAT SPACE DEV AGENCY , FOUND ADVANCEMENT INT SCIENCE
Inventor： YAMAKA EISO , HASEGAWA FUMIO , MORIYAMA TAKASHI , KOIZUMI TOMISUKE
IPC: G01J1/02 , H01L27/148 , H01L31/0248 , H01L31/0264 , H01L31/0312 , H01L31/108 , H01L31/18
Abstract: An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si1-XGeX epitaxial layer grown on a p-type substrate, wherein the character X denotes a Ge atomic fraction and wherein X increases from zero to a predetermined upper limit in a direction away from the Si substrate toward the metal. The metal may be selected from the group of Pt, an alloy of Pt and Si, and an alloy of Pt, Si, and Ge. In addition, the metal may also be selected from the group of Ir, an alloy of Ir and Si, and an alloy of Ir, Si, and Ge.
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公开(公告)号：GB2216716A
公开(公告)日：1989-10-11
申请号：GB8905844
申请日：1989-03-14
Applicant: NAT SPACE DEV AGENCY , FOUND ADVANCEMENT INT SCIENCE
Inventor： YAMAKA EISO , HASEGAWA FUMIO , MORIYAMA TAKASHI , KOIZUMI TOMISUKE
IPC: G01J1/02 , H01L27/148 , H01L31/0248 , H01L31/0264 , H01L31/0312 , H01L31/108 , H01L31/18
Abstract: An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si1-XGeX epitaxial layer grown on a p-type substrate, wherein the character X denotes a Ge atomic fraction and wherein X increases from zero to a predetermined upper limit in a direction away from the Si substrate toward the metal. The metal may be selected from the group of Pt, an alloy of Pt and Si, and an alloy of Pt, Si, and Ge. In addition, the metal may also be selected from the group of Ir, an alloy of Ir and Si, and an alloy of Ir, Si, and Ge.
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公开(公告)号：GB2217106B
公开(公告)日：1992-01-15
申请号：GB8906524
申请日：1989-03-21
Applicant: NAT SPACE DEV AGENCY , FOUND ADVANCEMENT INT SCIENCE
Inventor： YAMAKA EISO , MORIYAMA TAKASHI , KOIZUMI TOMISUKE
IPC: G01J1/02 , H01L27/14 , H01L27/148 , H01L31/0264 , H01L31/10 , H01L31/109
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