公开(公告)号：US08557688B2

公开(公告)日：2013-10-15

申请号：US13631211

申请日：2012-09-28

Applicant: National Yunlin University of Science and Technology

Inventor： Jian-Yang Lin ,  Pai-Yu Chang

IPC: H01L21/20

CPC classification number: H01L31/1804 ,  H01L31/03765 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/1812 ,  H01L31/1872 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method for fabricating a P-type polycrystalline silicon-germanium structure comprises steps: forming an aluminum layer and an amorphous germanium layer on a P-type monocrystalline silicon substrate in sequence; annealing the P-type monocrystalline silicon substrate, the aluminum layer and the amorphous germanium layer at a temperature of 400-650° C.; and undertaking an aluminum-induced crystallization process in which germanium atoms of the amorphous germanium layer and silicon atoms of the P-type monocrystalline silicon substrate simultaneously pass through the aluminum layer and then the amorphous germanium layer being induced and converted into a P-type polycrystalline silicon-germanium layer between the P-type monocrystalline silicon substrate and the aluminum layer. The present invention is a simple, reliable and low-cost method to fabricate a P-type polycrystalline silicon-germanium layer on a P-type monocrystalline silicon substrate. In addition, the obtained P-type polycrystalline silicon-germanium layer can convert sunlight of longer wavelengths into electric energy.

Abstract translation: 一种制造P型多晶硅 - 锗结构的方法包括以下步骤：依次在P型单晶硅衬底上形成铝层和非晶锗层; 在400-650℃的温度下退火P型单晶硅衬底，铝层和非晶锗层; 并进行铝诱导结晶工艺，其中非晶锗层的锗原子和P型单晶硅衬底的硅原子同时通过铝层，然后诱导非晶锗层并转化为P型多晶 硅 - 锗层之间的P型单晶硅衬底和铝层之间。 本发明是在P型单晶硅衬底上制造P型多晶硅 - 锗层的简单，可靠和低成本的方法。 此外，所获得的P型多晶硅 - 锗层可以将较长波长的太阳光转换为电能。