公开(公告)号：US20020030503A1

公开(公告)日：2002-03-14

申请号：US09768518

申请日：2001-01-24

Applicant: National Yunlin University of Science and Technology

Inventor： Jung Chuan Chou ,  Yii Fang Wang

IPC: G01R031/02

CPC classification number: G01R31/2628 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract translation: 一种用于测量使用氢化非晶硅作为感测膜的ISFET的温度参数的方法和装置，其使用未知解决方案中的温度参数和源极/漏极电流和栅极电压的测量来感测离子浓度， 未知溶液的pH值。

公开(公告)号：US20040180463A1

公开(公告)日：2004-09-16

申请号：US10811801

申请日：2004-03-30

Applicant: National Yunlin University of Science and Technology

Inventor： Jung-Chuan Chou ,  Yii Fang Wang

IPC: H01L021/00

CPC classification number: G01N27/414 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

公开(公告)号：US20020158645A1

公开(公告)日：2002-10-31

申请号：US10131777

申请日：2002-04-23

Applicant: National Yunlin University of Science and Technology

Inventor： Jung Chuan Chou ,  Yii Fang Wang

IPC: G01R031/02

CPC classification number: G01R31/2628 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract translation: 一种用于测量使用氢化非晶硅作为感测膜的ISFET的温度参数的方法和装置，其使用未知解决方案中的温度参数和源极/漏极电流和栅极电压的测量来感测离子浓度， 未知溶液的pH值。

公开(公告)号：US20040164330A1

公开(公告)日：2004-08-26

申请号：US10788398

申请日：2004-03-01

Applicant: National Yunlin University of Science and Technology

Inventor： Jung-Chuan Chou ,  Yii Fang Wang

IPC: H01L029/76 ,  H01L031/062 ,  H01L029/94

CPC classification number: G01N27/414 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

公开(公告)号：US20040129984A1

公开(公告)日：2004-07-08

申请号：US10737836

申请日：2003-12-18

Applicant: National Yunlin University of Science and Technology

Inventor： Jung-Chuan Chou ,  Yii Fang Wang

IPC: H01L029/76

CPC classification number: G01N27/414 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.