公开(公告)号：EP1416316A1

公开(公告)日：2004-05-06

申请号：EP03255545.0

申请日：2003-09-05

Applicant: Northrop Grumman Corporation

Inventor： Livingston, Peter M. ,  Hom, Steven R. ,  Kunkee, Elizabeth T.

IPC: G02F1/225 ,  G02F1/017 ,  H01L29/12

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  G02F1/01708 ,  G02F1/2257 ,  G02F2001/01791 ,  G02F2201/126 ,  H01L29/127

Abstract: A quantum-confined Stark effect quantum-dot optical modulator (115) includes an interferometer (130) having a beam splitter (135), first and second parallel optical branches (140a,140b) fed by the beam splitter (135) and a beam combiner (145) fed by the first and second parallel optical branches and a laser (110) for feeding a laser beam to the beam splitter. First and second optical phase shifters (150a,150b) are provided in respective ones of the first and second parallel optical branches. Each optical phase shifter includes an intrinsic semiconductor crystalline planar layer and p-type and n-type planar semiconductor layers on opposite faces of the intrinsic semiconductor crystalline planar layer, the intrinsic layer lying in a plane parallel to a direction of propagation of the laser beam in the respective optical branch. The intrinsic layer has plural layers of planar arrays of quantum dots therein. A reverse bias D.C. voltage source (320,325) is connected across the p-type and n-type layers.

Abstract translation: 在每个光学移相器（150a，150b）的相对面上具有p型和n型平面半导体层的本征半导体晶体平面层具有量子点的平面阵列，并且位于平行于激光束传播方向的平面中。 一对调制源极端子跨过p型和n型层连接的反向偏压直流（DC）电压源（320,325）。 光学移相器还包括独立权利要求。