公开(公告)号：WO0248023A3

公开(公告)日：2003-08-21

申请号：PCT/US0151334

申请日：2001-10-25

Applicant: OMM INC

Inventor： GRITTERS JOHN ,  SAILOR MICHAEL J

IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00

CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/016

Abstract: A method is provided for fabricating a MEMS device on a workpiece by forming a mercaptain mask (306) on a gold structure (309). The mask (306) is used to inhibit anodic etching of polysilicon structures (303) during the acid etch process that is used to remove the oxide dielectric layer from the workpiece to expose the polysilicon structures of the MEMS device (303) to allow their movement. The mercaptain can be utilised to adhere to the exposed gold surface (309) to form a self-mask (306) on the gold surface (309). As such, a workpiece having numerous gold surfaces, such as numerous optomechanical switches, each having various types of gold structures, can be placed in a mercaptain solution. The mercaptain selectively coats the gold surfaces to form self-adhering mercaptain masks on all the exposed gold surfaces.

Abstract translation: 提供了一种通过在金结构（309）上形成巯基掩模（306）来在工件上制造MEMS器件的方法。 掩模（306）用于在酸蚀刻工艺期间抑制多晶硅结构（303）的阳极蚀刻，所述酸蚀刻工艺用于从工件去除氧化物介电层以暴露MEMS器件（303）的多晶硅结构以允许其移动 。 可以使用巯基粘附到暴露的金表面（309）以在金表面（309）上形成自掩模（306）。 因此，可以将具有多个金表面的工件，例如各种具有各种类型的金结构的多个光学机械开关放置在巯基溶液中。 巯基选择性地涂覆金表面以在所有暴露的金表面上形成自粘的巯基掩模。