公开(公告)号：JP2005322923A

公开(公告)日：2005-11-17

申请号：JP2005134682

申请日：2005-05-02

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： GUENTHER EWALD KARL MICHAEL ,  WAITL GUENTHER ,  BRUNNER HERBERT ,  STRAUS JOERG

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/54 ,  H01L33/00

CPC classification number: H01L33/56 ,  H01L25/0753 ,  H01L33/505 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode device which can be manufactured at a particularly low cost, and to provide a method of manufacturing the light-emitting diode device.
SOLUTION: A light-emitting diode device has at least one light-emitting diode chip 11, provided with a radiation emission surface 12 via which most of the electromagnetic radiation generated in the light-emitting diode chip is emitted; at least one light-emitting layer 13 positioned on the radiation emitting surface; and a housing 17 in which the light-emitting diode chip is embedded.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供可以以特别低的成本制造的发光二极管器件，并提供一种制造发光二极管器件的方法。 解决方案：发光二极管器件具有至少一个发光二极管芯片11，该发光二极管芯片11具有发射在发光二极管芯片中产生的大部分电磁辐射的辐射发射表面12; 位于辐射发射表面上的至少一个发光层13; 以及嵌入发光二极管芯片的壳体17。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2012044225A

公开(公告)日：2012-03-01

申请号：JP2011259384

申请日：2011-11-28

Applicant: Osram Opto Semiconductors Gmbh ,  Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH ,  パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツングPatent−Treuhand−Gesellschaft fuer elektrische Gluehlampen mbH

Inventor： DANIEL BECKER ,  BRUNNER HERBERT ,  FIEDLER TIM ,  JORG STRAUSS ,  MARTIN ZACHAU

IPC: H01L33/50 ,  H01L33/58

CPC classification number: H01L33/505 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a luminescence conversion LED that has high conversion efficiency.SOLUTION: A luminescence conversion LED has a radiation emitting chip (2) that is connected to electrical connections (3, 4), and is surrounded by a housing comprising at least a basic body (6) and a cap (8). The chip (2) is seated on the basic body (6), in particular in a cutout (5) of the basic body, and the primary radiation of the chip is converted at least partially into longer wave radiation by a conversion element. In the luminescence conversion LED, the cap (8) is formed by a vitreous body, the conversion means is contained in the vitreous body, and the refractive index of the vitreous body is higher than 1.6, preferably at least n=1.7.

Abstract translation: 要解决的问题：提供具有高转换效率的发光转换LED。 解决方案：发光转换LED具有连接到电连接（3,4）的辐射发射芯片（2），并且由包括至少基体（6）和盖（8）的壳体包围， 。 芯片（2）位于基体（6）上，特别是在基体的切口（5）中，并且芯片的主辐射由转换元件至少部分转换成更长的波长辐射。 在发光转换LED中，盖（8）由玻璃体形成，转换装置包含在玻璃体中，玻璃体的折射率高于1.6，优选至少为n = 1.7。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012054585A

公开(公告)日：2012-03-15

申请号：JP2011232051

申请日：2011-10-21

Applicant: Osram Opto Semiconductors Gmbh ,  Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH ,  パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツングPatent−Treuhand−Gesellschaft fuer elektrische Gluehlampen mbH

Inventor： BRAUNE BERT ,  BRUNNER HERBERT ,  JERMANN FRANK ,  ZACHAU MARTIN

IPC: H01L33/50 ,  C09K11/08 ,  C09K11/56 ,  C09K11/73 ,  C09K11/80 ,  C09K11/84 ,  C09K11/88

CPC classification number: H01L33/502 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an LED having inorganic phosphor.SOLUTION: An LED chip 1 discharges primary radiation in the range of 300-470 nm and the radiation is converted partially or entirely to radiation of long wavelength by at least one kind of phosphor 6 exposed to primary radiation of the LED 1. The conversion is achieved under the use of one kind of phosphor 6 having an average particle size din the range of at least 1-50 nm, preferably in the range of 2-25 nm.

Abstract translation: 解决的问题：提供一种具有无机荧光体的LED。 解决方案：LED芯片1将300-470nm范围内的一次辐射放电，并且通过暴露于LED 1的一次辐射的至少一种荧光体6将辐射部分或全部转换成长波长的辐射。 在使用平均粒度d 50 的一种荧光体6在至少1-50nm的范围内，优选在2- 25nm。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2005136427A

公开(公告)日：2005-05-26

申请号：JP2004316905

申请日：2004-10-29

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： GROETSCH STEFAN ,  BRUNNER HERBERT ,  OTT HUBERT

IPC: H01L33/50 ,  H01L33/58 ,  H01L33/00

CPC classification number: H01L33/50 ,  H01L33/58 ,  H01L2224/48463

Abstract: PROBLEM TO BE SOLVED: To present a light-emitting diode (LED) chip that already has elements for improving the radiation output coupling and/or to convert electromagnetic radiation, thus to miniaturize a light-emitting device.
SOLUTION: The LED chip, which has an array of epitaxially grown semiconductor layers, is so structured that the LED has a covering object transmitting radiation, the covering object is put on a radiation output coupling surface postpositioned in an LED chip radiation direction and has a first principal plane oriented in the radiation output coupling surface, a second principal plane oriented toward a direction which is reverse to that of the radiation output coupling surface, and a side surface that connects the first and second principal planes, and a junction layer is arranged between the radiation output coupling surface and the covering object, which directly joins and fixes the covering object to the semiconductor layer array, and the junction layer includes at least one conversion layer that has a light-emitting conversion material.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提出已经具有用于改善辐射输出耦合的元件和/或转换电磁辐射的发光二极管（LED）芯片，从而使发光器件小型化。 解决方案：具有外延生长的半导体层阵列的LED芯片被构造成使得LED具有透射辐射的覆盖对象，覆盖物被放置在LED芯片辐射方向上后置的辐射输出耦合表面上 并且具有在辐射输出耦合表面中定向的第一主平面，朝向与辐射输出耦合表面的方向相反的方向定向的第二主平面以及连接第一和第二主平面的侧表面以及连接 层之间布置在辐射输出耦合表面和被覆物体之间，其将覆盖物直接接合并固定到半导体层阵列，并且接合层包括至少一个具有发光转换材料的转换层。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004193623A

公开(公告)日：2004-07-08

申请号：JP2003415254

申请日：2003-12-12

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： JAEGER HARALD ,  BRUNNER HERBERT

IPC: B29C45/14 ,  H01L33/52 ,  H01L33/00

CPC classification number: B29C45/14639 ,  B29L2011/00 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a light-emitting diode light source provided with a light-emitting conversion element in which chromaticity variation is small between a plurality of light-emitting diode light sources of the same kind, at low cost.
SOLUTION: The method comprises the steps of forming a layer bonded zone of a series of light-emitting diode layer deposited on a support substrate, generating a plurality of trenches in the layer bonded zone, inserting the layer bonded zone into a cavity of an injection molding, pouring an injection material to be mixed with the light-emitting conversion material into the cavity, removing the injection molding, and individualizing the light-emitting diode light source from the layer bonded zone.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够制造发光二极管光源的方法，该发光二极管光源设置有相同类型的多个发光二极管光源之间的色度变化小的发光转换元件 ，成本低廉。 解决方案：该方法包括以下步骤：形成沉积在支撑衬底上的一系列发光二极管层的层粘合区，在层粘合区中产生多个沟槽，将层粘合区插入腔 注射成型，将与发光转换材料混合的注入材料注入到空腔中，去除注射成型，并使发光二极管光源与层粘合区分开。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2011049600A

公开(公告)日：2011-03-10

申请号：JP2010270229

申请日：2010-12-03

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： WIRTH RALPH ,  BRUNNER HERBERT ,  ILLEK STEFAN ,  EISSLER DIETER

IPC: H01L33/02 ,  H01L31/0224 ,  H01L31/10 ,  H01L33/38

CPC classification number: H01L31/022408 ,  H01L31/022416 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/382 ,  H01L2224/16225

Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric element, a device having a number of the photoelectric elements which can be easily manufactured at a low cost, and an easy manufacturing method of the photoelectric element. SOLUTION: A photoelectric element 1 comprises an active zone and a semiconductor functional region 2 having a main extension direction in a lateral direction. The semiconductor functional region has at least one hole passing through the active zone, and a connection conductor material is disposed in a region of the hole. The connection conductor material is electrically insulated from the active zone at least in a partial region of the hole. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种光电元件，具有可以容易地以低成本制造的多个光电元件的装置和光电元件的容易的制造方法。 解决方案：光电元件1包括有源区和在横向上具有主延伸方向的半导体功能区2。 半导体功能区域具有通过有源区域的至少一个孔，并且连接导体材料设置在孔的区域中。 连接导体材料至少在孔的部分区域中与活性区电绝缘。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011023770A

公开(公告)日：2011-02-03

申请号：JP2010248992

申请日：2010-11-05

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： WAITL GUENTER ,  LUTZ ROBERT ,  BRUNNER HERBERT

IPC: H01L33/48 ,  H01L31/02 ,  H01L33/58

CPC classification number: H01L33/486 ,  H01L31/0203 ,  H01L31/02325 ,  H01L33/58 ,  H01L2224/48247 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To improve the radiation characteristics of an optoelectronic SMT element including a base, an optoelectronic transmitter or receiver in a notch of the base, an inclined inner wall surface of the notch, a pouring substance in the notch, and an optical device for closing the notch; to provide effectively regulatable radiation characteristics and to reduce the costs of the element. SOLUTION: The optical device 16 has a base surface 17 in a center range, the base surface is continued to a ring-shaped supporting surface 19 retreated from the base surface and located on the outside of the base surface in a radius direction through a transition slope 18, the base surface is located in the notch based on the transition slope, and when the optical device is mounted on an uncured pouring substance 14, the base surface is brought into contact with the pouring substance on the whole surface, and the pouring substance is arranged between the inclined inner wall surface forming a reflector and the transition slope. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提高包括基座的缺口中的基座，光电发射器或接收器的光电SMT元件的辐射特性，凹口的倾斜内壁表面，凹口中的倾倒物质， 以及用于封闭所述凹口的光学装置; 以提供有效的可调节辐射特性并降低元件的成本。 解决方案：光学装置16具有中心范围的基底表面17，基底表面延续到从基部表面退回的环形支撑表面19，并且位于基底表面的外侧，半径方向 通过过渡斜面18，基础面基于过渡坡度位于凹口中，当光学装置安装在未固化的倾倒物质14上时，基面与整个表面上的倾倒物质接触， 并且倾倒物质布置在形成反射器的倾斜内壁表面和过渡斜坡之间。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009200531A

公开(公告)日：2009-09-03

申请号：JP2009138210

申请日：2009-06-09

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BOGNER GEORG DIPL PHYS ,  BRUNNER HERBERT ,  HIEGLER MICHAEL ,  WAITL GUENTHER

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/64

CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L33/60 ,  H01L33/642 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a heat conduction means or a heat dissipation means improved so as to allow generation of optical high-output in a radiation emitting component.
SOLUTION: A thermal connection part 4 separately formed is inserted into and connected to a support section having a wire connection area 10 and connection strips 3a, 3b. A housing base body 1 is formed from a molding material, and a conductor frame 2 is embedded in the housing base body so that the electric connection strips are lead from the housing base body, and a thermal connection surface of the thermal connection part is thermally connectable from the outside. The housing base body includes a radiation emitting window 8, and the thermal connection part 4 is embedded in the housing base body so that a chip mounting area 11 is located in the radiation emitting window. A sidewall 9 of the radiation emitting window 8 is shaped as a reflection plane.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种改进的热传导装置或散热装置，以便在辐射发射部件中产生光学高输出。 解决方案：单独形成的热连接部分4插入并连接到具有导线连接区域10的支撑部分和连接条3a，3b。 壳体基体1由成型材料形成，导体框架2嵌入壳体基体内，使电连接带从壳体基体引出，热连接部的热连接面热 可从外部连接。 壳体基体包括辐射发射窗8，并且热连接部分4嵌入壳体基体中，使得芯片安装区域11位于辐射发射窗口中。 辐射发射窗8的侧壁9被成形为反射平面。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008219057A

公开(公告)日：2008-09-18

申请号：JP2008158177

申请日：2008-06-17

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BRAUNE BERT ,  BRUNNER HERBERT

IPC: H01L33/38 ,  H01L33/50

CPC classification number: H01L33/505 ,  H01L33/38 ,  H01L2224/11 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: PROBLEM TO BE SOLVED: To provide a method to achieve simple and inexpensive coating for a light emitting diode chip having front side electrical contact. SOLUTION: Before the chip is coated with luminescence conversion material, the entire wafer composite is fixedly mounted with its underside on a carrier, and the chip is singulated from the wafer composite in such a way that they continue to be held together on the carrier. A side edge of the singulated chip is partly at least coated with the luminescence conversion material at the time of coating the chip, and subsequently the chip is singulated as a light emitting diode light source from the composite of the substrate and the luminescence conversion material. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于实现具有前侧电接触的发光二极管芯片的简单且便宜的涂层的方法。 解决方案：在芯片涂有发光转换材料之前，整个晶片复合材料固定地安装在载体的下侧，并且芯片从晶片复合材料中分离，使得它们继续保持在一起 承运人 在涂覆芯片时，单片化芯片的侧边缘部分至少涂覆有发光转换材料，随后将芯片从基板和发光转换材料的复合材料中分离成发光二极管光源。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：WO2010025694A9

公开(公告)日：2010-10-28

申请号：PCT/DE2009001103

申请日：2009-08-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  GUENTHER EWALD KARL MICHAEL ,  HERRMANN SIEGFRIED ,  ZEHNDER ULRICH ,  BRUNNER HERBERT

Inventor： GUENTHER EWALD KARL MICHAEL ,  HERRMANN SIEGFRIED ,  ZEHNDER ULRICH ,  BRUNNER HERBERT

IPC: H01L33/62 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/486 ,  H01L33/645 ,  H01L2924/0002 ,  H05B33/0803 ,  H01L2924/00

Abstract: In at least one embodiment of the optoelectronic component (1), it comprises a carrier (2) having an installation side (20) and at least one functional element (3). The optoelectronic component (1) further comprises at least one substrateless optoelectronic semiconductor chip (4) having a top side (44) and a bottom side (45) opposite thereof, wherein electric contacting of the semiconductor chip (4) takes place via the top side (44) and the bottom side (45), and wherein the bottom side (45) faces the installation side (20) of the carrier (2). The at least one semiconductor chip (4) is applied to the installation side (20). The optoelectronic component (1) further comprises at least one electric contact film (5) on the top side (44) of the semiconductor chip (1), wherein the contact film (5) is structured. Such an optoelectronic component (1) has a compact design and good thermal properties.

Abstract translation: 在光电子器件（1）中的至少一个实施例具有这种在载体（2）具有安装侧（20）和具有至少一个功能元件（3）。 此外，光电子器件（1）包括至少一个无基材，所述光电子半导体芯片（4），其具有一个顶部（44）和相对的底部表面（45），所述上侧（44）和底部上的半导体芯片（4）的电接触 （45），并且其中载体（2）的安装侧（20）的下侧（45）面向。 该至少一个半导体芯片（4）被施加到安装侧（20）。 此外，光电子器件（1）包括至少一个电接触膜（5）上的半导体芯片（1）的上侧（44），其中，所述接触膜（5）被构造。 这种光电子部件（1）具有紧凑的结构并具有良好的热性能。