Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor component which is suitable for particular applications and has an alternative structure deriving heat generated in an optically active layer. SOLUTION: The semiconductor component 11 having the optically active layer 2 comprises at least, a cooling member 7 to store or discharge heat generated by the optically active layer, and at least a coupling member 10 connecting the optically active layer to the cooling member and including at least a hollow space, wherein the hollow space is partially or completely filled with a fluidized cooling medium. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
An optoelectronic module (1) comprises a supporting substrate layer (10) encompassing several circuits (200) that have been previously structured into or onto the supporting substrate layer (10) on the wafer level in front-end processes. Light emitting diodes (100), the emission characteristics, brightness, and color of which are controlled by the circuits (200) integrated into/onto the supporting substrate layer (10), are arranged on the supporting substrate layer (10). By interconnecting several optoelectronic modules (1, 2, 3), module arrangements are created which have an extremely high degree of packing density and excellent properties in respect of color fidelity and dimmability. The individual optoelectronic modules of such a module arrangement can be adjusted to each other or to the surroundings in an autonomous or coupled manner.
Abstract:
The invention relates to a method for producing a plurality of optoelectronic components. A semiconductor element support (10) comprises on a first main surface (12) a plurality of semiconductor elements (14) which have respective contact structures (20) and an active layer (16) for generating electromagnetic radiation. A planar filling structure is formed on the first main surface (12), said planar filling structure (42, 44) at least partially covering areas of the contact structure (20) and the semiconductor element support without covering the semiconductor body (14).
Abstract:
In at least one embodiment of the optoelectronic component (1), it comprises a carrier (2) having an installation side (20) and at least one functional element (3). The optoelectronic component (1) further comprises at least one substrateless optoelectronic semiconductor chip (4) having a top side (44) and a bottom side (45) opposite thereof, wherein electric contacting of the semiconductor chip (4) takes place via the top side (44) and the bottom side (45), and wherein the bottom side (45) faces the installation side (20) of the carrier (2). The at least one semiconductor chip (4) is applied to the installation side (20). The optoelectronic component (1) further comprises at least one electric contact film (5) on the top side (44) of the semiconductor chip (1), wherein the contact film (5) is structured. Such an optoelectronic component (1) has a compact design and good thermal properties.
Abstract:
A semiconductor assembly with at least one support comprises at least two planar pn junctions that are attached to the support in at least one level in such a manner that p and n sides of different pn junctions are alternately closer to the top of the support. Planar conductor assemblies are attached partly above and partly below the level of the pn junctions. A suitable arrangement and design of pn junctions and conductor assemblies results in at least one functional electric series connection of the pn junctions. This arrangement allows a large-surface and homogeneous, high luminosity lighting device to be designed in an uncomplicated and flexible manner and oftentimes required complex planar optical waveguides to be simplified or avoided. The invention also relates to a method for producing said semiconductor assembly, comprising the steps of producing pn junctions, producing electric conductor assemblies and arranging the pn junctions. Said method allows an efficient and cost-effective production of the semiconductor assembly.
Abstract:
The invention relates to a radiation-emitting component, comprising a carrier, a semiconductor chip arranged on said carrier, the semiconductor chip having an active layer for generating electromagnetic radiation and a radiation exit surface, a first and a second contact structure for electrically contacting the semiconductor chip, a first and a second contact layer, the semiconductor chip being electrically connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer, and a passivation layer arranged on the semiconductor chip. Said passivation layer comprises an organic polymer of the general formula (I) wherein the groups R1 to R16 independently represent H, CH3, F, Cl or Br, and n has a value of from 10 to 500.000.
Abstract:
The invention relates to a light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side (101) and which are fixed by their rear side (102) - opposite the front side - on a first main area (201) of a common carrier (2), wherein the semiconductor chips are composed of a respective substrateless semiconductor layer stack (1) and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.
Abstract:
In at least one embodiment of the optoelectronic component (1), it comprises a carrier (2) having an installation side (20) and at least one functional element (3). The optoelectronic component (1) further comprises at least one substrateless optoelectronic semiconductor chip (4) having a top side (44) and a bottom side (45) opposite thereof, wherein electric contacting of the semiconductor chip (4) takes place via the top side (44) and the bottom side (45), and wherein the bottom side (45) faces the installation side (20) of the carrier (2). The at least one semiconductor chip (4) is applied to the installation side (20). The optoelectronic component (1) further comprises at least one electric contact film (5) on the top side (44) of the semiconductor chip (1), wherein the contact film (5) is structured. Such an optoelectronic component (1) has a compact design and good thermal properties.
Abstract:
The invention relates to an arrangement comprising a semiconductor chip (1) which is designed to emit light during operation as well as a cover layer (2) that lies across from a light-emitting surface of the semiconductor chip (1) such that light emitted by the semiconductor chip (1) penetrates into the cover layer (2). According to the invention, said arrangement is characterized in that a light-deflecting structure is provided in an area of the cover layer (2) that overlaps the chip (1). Said light-deflecting structure deflects the light that penetrates into the cover layer (2) in the direction of the longitudinal extension of the cover layer (2). Furthermore, the coating (2) acts as an optical waveguide and is designed to emit the light in a distributed manner across the top surface of the cover layer (2).
Abstract:
The invention describes a thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, includes a semiconductor material and is intended to emit radiation, wherein a heat-dissipating layer which is intended to cool the semiconductor component is applied to the carrier layer. The invention also describes a component assembly.