公开(公告)号：US09761770B2

公开(公告)日：2017-09-12

申请号：US14760454

申请日：2014-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Eibl ,  Sebastian Taeger ,  Lutz Höppel ,  Karl Engl ,  Stefanie Rammelsberger ,  Markus Maute ,  Michael Huber ,  Rainer Hartmann ,  Georg Hartung

IPC: H01L33/00 ,  H01L33/54 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L21/02 ,  H01L33/52 ,  H01L33/40

CPC classification number: H01L33/54 ,  G01B2210/306 ,  H01L21/0228 ,  H01L33/405 ,  H01L33/44 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

公开(公告)号：US11309459B2

公开(公告)日：2022-04-19

申请号：US16495144

申请日：2018-04-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Philipp Kreuter ,  Rainer Hartmann ,  Michael Binder ,  Tobias Meyer

IPC: H01L33/42 ,  H01L33/30 ,  H01L33/00

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.

公开(公告)号：US20180254384A1

公开(公告)日：2018-09-06

申请号：US15758382

申请日：2016-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Hartmann ,  Martin Mandl ,  Simeon Katz ,  Andreas Rückerl

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/00

CPC classification number: H01L33/382 ,  H01L31/00 ,  H01L31/1035 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/387 ,  H01L33/44 ,  H01L2933/0025

Abstract: An optoelectronic semiconductor chip includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer electrically conductively connects to a first contact, the first contact is formed on a front side of the chip next to the active region, the second semiconductor layer electrically conductively connects to a second contact, the second contact is arranged on the front side of the chip next to the active region, and an electrically insulating separating layer that electrically insulates a rear side of the chip from the active region of the semiconductor chip, and an electrically insulating separating layer includes at least one first separating layer having at least one atomic layer or at least one molecular layer and is deposited by atomic layer deposition or molecular layer deposition.

公开(公告)号：US20200044117A1

公开(公告)日：2020-02-06

申请号：US16495144

申请日：2018-04-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Philipp Kreuter ,  Rainer Hartmann ,  Michael Binder ,  Tobias Meyer

IPC: H01L33/42 ,  H01L33/30 ,  H01L33/00

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.

公开(公告)号：US20220393058A1

公开(公告)日：2022-12-08

申请号：US17774104

申请日：2020-11-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael Binder ,  Andreas Rückerl ,  Roland Zeisel ,  Tobias Meyer ,  Kerstin Neveling ,  Christine Rafael ,  Moses Richter ,  Rainer Hartmann ,  Clemens Vierheilig

IPC: H01L33/00 ,  H01L33/44

Abstract: In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

公开(公告)号：US20150372203A1

公开(公告)日：2015-12-24

申请号：US14760454

申请日：2014-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Eibl ,  Sebastian Taeger ,  Lutz Höppel ,  Karl Engl ,  Stefanie Rammelsberger ,  Markus Maute ,  Michael Huber ,  Rainer Hartmann ,  Georg Hartung

IPC: H01L33/54 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/54 ,  G01B2210/306 ,  H01L21/0228 ,  H01L33/405 ,  H01L33/44 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

Abstract translation: 光电子半导体芯片包括具有用于产生电磁辐射的有源区的半导体本体，用于反射电磁辐射的第一镜层，用电绝缘材料形成的第一封装层，以及用于机械地支撑第一封装的载体 第一镜层和半导体本体。 第一镜层布置在载体和半导体本体之间。 第一封装层布置在载体和第一反射镜层之间。 第一封装层是ALD层。

公开(公告)号：US10193024B2

公开(公告)日：2019-01-29

申请号：US15758382

申请日：2016-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Hartmann ,  Martin Mandl ,  Simeon Katz ,  Andreas Rückerl

IPC: H01L33/44 ,  H01L33/38 ,  H01L31/00 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer electrically conductively connects to a first contact, the first contact is formed on a front side of the chip next to the active region, the second semiconductor layer electrically conductively connects to a second contact, the second contact is arranged on the front side of the chip next to the active region, and an electrically insulating separating layer that electrically insulates a rear side of the chip from the active region of the semiconductor chip, and an electrically insulating separating layer includes at least one first separating layer having at least one atomic layer or at least one molecular layer and is deposited by atomic layer deposition or molecular layer deposition.