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    Solid electrolytic capacitor
    3.
    发明专利
    Solid electrolytic capacitor 审中-公开
    固体电解电容器

    公开(公告)号：JP2008288296A

    公开(公告)日：2008-11-27

    申请号：JP2007130105

    申请日：2007-05-16

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： AOYAMA TATSUJI ,  MURASHIMA YUJI ,  MARUOKA TOMOHIRO

    IPC: H01G9/04 ,  H01G9/02

    Abstract: PROBLEM TO BE SOLVED: To miniaturize a solid electrolytic capacitor used for various kinds of electronic equipment, and to increase its capacity. SOLUTION: The solid electrolytic capacitor has: an element 10 formed by winding an anode foil 1 and a cathode foil 2 while a separator 3 is interposed between them; and a solid electrolyte 4 provided between the anode foil 1 and cathode coil 2 of the element 10 and is made of a conductive polymer. The solid electrolytic capacitor has a configuration where the anode foil 1 comprises a base material made of valve action metal foil and the vapor-deposited layer of the valve action metal formed on the surface of the base material by vapor deposition. In the vapor-deposited layer, a mode of a void diameter is 0.02-0.10 μm, and the thickness (both surfaces) of the vapor-deposited layer is 20-80 μm, thus miniaturizing the solid electrolytic capacitor by thinning and increasing its capacity. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了使用于各种电子设备的固体电解电容器的小型化，并且增加其容量。 解决方案：固体电解电容器具有：通过卷绕阳极箔1和阴极箔2而形成的元件10，同时隔板3插入它们之间; 以及设置在元件10的阳极箔1和阴极线圈2之间并由导电聚合物制成的固体电解质4。 固体电解电容器具有这样的结构，其中阳极箔1包括由阀作用金属箔制成的基材和通过气相沉积在基材的表面上形成的阀作用金属的气相沉积层。 在蒸镀层中，空穴直径为0.02〜0.10μm，蒸镀层的厚度（两面）为20〜80μm，通过变薄而使固体电解电容器小型化， 。 版权所有（C）2009，JPO＆INPIT

    Method of depositing piezoelectric film and piezoelectric element using it
    4.
    发明专利
    Method of depositing piezoelectric film and piezoelectric element using it 审中-公开
    使用它沉积压电薄膜和压电元件的方法

    公开(公告)号：JP2012004396A

    公开(公告)日：2012-01-05

    申请号：JP2010138850

    申请日：2010-06-18

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： MURASHIMA YUJI

    IPC: H01L41/18 ,  C23C14/08 ,  H01L41/187 ,  H01L41/316 ,  H01L41/39

    Abstract: PROBLEM TO BE SOLVED: To enhance the characteristics and reliability of an element using a piezoelectric substance.SOLUTION: A space where a pair of targets are facing each other is provided in a vacuum chamber, a substrate and a lead supply source are installed substantially perpendicularly to the facing direction of the targets, and then a magnetic field is generated along the facing direction and a voltage is applied to the target so that plasma is generated thus forming a piezoelectric film on the substrate. When the piezoelectric film is formed, lead vapor is supplied from the lead supply source to the space where the targets are facing each other, and the pressure in the vacuum chamber is set equal to or lower than 0.13 Pa. With such arrangement, ferroelectric characteristics, piezoelectric characteristics, pyroelectric characteristics and reliability are enhanced.

    Abstract translation: 要解决的问题：提高使用压电物质的元件的特性和可靠性。 解决方案：在真空室中设置一对靶相对的空间，基板和引线供给源大体上垂直于靶的相对方向安装，然后沿着靶产生磁场 面向方向和电压施加到靶，使得等离子体产生，从而在衬底上形成压电膜。 当形成压电膜时，将铅蒸汽从引线供给源供给到目标物彼此相对的空间，真空室内的压力设定为0.13Pa以下，通过这样的布置，铁电特性 ，压电特性，热电特性和可靠性得到提高。 版权所有（C）2012，JPO＆INPIT

    Electrolytic capacitor
    5.
    发明专利
    Electrolytic capacitor 审中-公开
    电解电容器

    公开(公告)号：JP2008288294A

    公开(公告)日：2008-11-27

    申请号：JP2007130103

    申请日：2007-05-16

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： AOYAMA TATSUJI ,  MURASHIMA YUJI ,  MARUOKA TOMOHIRO

    IPC: H01G9/055 ,  H01G9/04

    Abstract: PROBLEM TO BE SOLVED: To miniaturize a solid electrolytic capacitor used for various kinds of electronic equipment, and to increase its capacity.
    SOLUTION: In the electrolytic capacitor, an element 1, where anode foil 2 and cathode foil 3 are wound by interposing a separator 4 between them, is stored in a metal case 8 with an electrolyte 7 for drive, and the opening of the metal case 8 is sealed by a sealing element 9. The anode foil 2 and/or the cathode foil 3 comprise: a base material made of valve action metal foil; and a vapor-deposited layer of valve action metal formed by vapor deposition on the surface of the base material. The vapor-deposited layer of the valve action metal is formed in a frost pillar shape from the base material toward a surface layer and in a so-called aquatic plant shape, where each particle is branched into a plurality of parts which are combined integrally. Therefore, the surface area is increased by additional surface-roughening and its mechanical strength is increased, thus miniaturizing the solid electrolytic capacitor by thinning and increasing its capacity.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了使用于各种电子设备的固体电解电容器的小型化，并且增加其容量。 解决方案：在电解电容器中，通过在它们之间插入隔板4而缠绕阳极箔2和阴极箔3的元件1被储存在具有用于驱动的​​电解质7的金属外壳8中，并且打开 金属外壳8由密封元件9密封。阳极箔2和/或阴极箔3包括：由阀动作金属箔制成的基材; 以及通过气相沉积在基材的表面上形成的阀作用金属的气相沉积层。 阀作用金属的蒸镀层从基材朝向表层形成为霜柱状，并且以所谓的水生植物形状形成，其中每个颗粒被分成多个组合在一起的部分。 因此，通过附加的表面粗糙度增加表面积，并且其机械强度增加，从而通过变薄和增加其容量来使固体电解电容器小型化。 版权所有（C）2009，JPO＆INPIT

    Thin film forming device
    6.
    发明专利
    Thin film forming device 审中-公开
    薄膜成型装置

    公开(公告)号：JP2009249710A

    公开(公告)日：2009-10-29

    申请号：JP2008101203

    申请日：2008-04-09

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： MURASHIMA YUJI ,  KOMAKI KAZUKI

    IPC: C23C14/34 ,  H01L21/316

    Abstract: PROBLEM TO BE SOLVED: To reduce crystal defects in compound films.
    SOLUTION: Disclosed is a thin film forming device for successively depositing compound films by a plurality of thin film forming systems. The thin film forming device comprises: two first targets 4A, 4B opposite to each other; a high density radial source 5 facing an opposed space 10 between the first targets 4A, 4B from a direction almost vertical to the confronted direction of the first targets 4A, 4B; and a base material holder 6 facing the opposed space 10 between the first targets 4A, 4B from a direction different from the high density radical source 5. The back faces of the respective first targets 4A, 4B are provided with magnets 7 generating magnetic fields in the opposed direction of the first targets 4A, 4B, and, in the first thin film forming system, a negative voltage or an AC voltage is applied to each first target so as to form a compound film on a base material 8 to be installed in the base material holder 6. In this way, an initial layer can be formed by the first thin film forming system, and crystal defects in the compound film can be reduced.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：减少复合膜中的晶体缺陷。 解决方案：公开了一种用于通过多个薄膜形成系统连续沉积化合物膜的薄膜形成装置。 薄膜形成装置包括：彼此相对的两个第一靶4A，4B; 高密度径向源5，从与第一目标4A，4B的相对方向几乎垂直的方向，面向第一目标4A，4B之间的相对空间10; 以及从不同于高密度自由基源5的方向面向第一靶4A，4B之间的相对空间10的基材保持件6.各个第一靶4A，4B的背面设置有产生磁场的磁体7 将第一靶4A，4B的相反方向以及第一薄膜形成系统中的负电压或AC电压施加到每个第一靶上，以便在基材8上形成复合膜以安装在 以这种方式，可以通过第一薄膜形成系统形成初始层，并且可以降低复合膜中的晶体缺陷。 版权所有（C）2010，JPO＆INPIT

    Apparatus for forming thin film and method for forming thin film
    7.
    发明专利
    Apparatus for forming thin film and method for forming thin film 审中-公开
    用于形成薄膜的装置和形成薄膜的方法

    公开(公告)号：JP2009030133A

    公开(公告)日：2009-02-12

    申请号：JP2007197089

    申请日：2007-07-30

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： MURASHIMA YUJI ,  KOMAKI KAZUKI ,  HORI KENICHIRO

    IPC: C23C14/34 ,  H01L21/316 ,  H05H1/46

    Abstract: PROBLEM TO BE SOLVED: To form a compound film having few crystal defects. SOLUTION: In order to achieve the object, this apparatus for forming a thin film comprises: two targets 9 which face to each other; a high-density radical source 11 that faces to a space 16 in which the targets 9 oppose to each other, from a direction which is almost vertical to the direction of the opposing targets 9; a substrate holder 13 which faces to the space 16 in which the targets 9 oppose to each other, from a different direction from that of the high-density radical source 11; and magnets 17 which are placed on the back face of each target 9 respectively and generate a magnetic field in an facing direction of the targets 9. A negative voltage is also applied to each target 9 to make the compound film formed on a substrate 15 which is arranged on the substrate holder 13. Thereby, the apparatus inhibits negative ions from colliding to the compound film and consequently can form the compound film having few crystal defects. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：形成晶体缺陷少的化合物膜。 解决方案：为了实现该目的，该薄膜形成装置包括：两个彼此面对的靶9; 从与相对的目标9的方向几乎垂直的方向面对面对靶9彼此相对的空间16的高密度激光源11; 从与高密度自由基源11的方向不同的方向面向靶9彼此相对的空间16的基板保持件13; 以及分别放置在每个靶9的背面上的磁体17，并且在目标9的相对方向上产生磁场。还对每个靶9施加负电压，以使形成在基板15上的化合物膜 由此，能够抑制负离子与化合物膜的碰撞，能够形成晶体缺陷少的化合物膜。 版权所有（C）2009，JPO＆INPIT

    Solid electrolytic capacitor
    8.
    发明专利
    Solid electrolytic capacitor 审中-公开
    固体电解电容器

    公开(公告)号：JP2008288295A

    公开(公告)日：2008-11-27

    申请号：JP2007130104

    申请日：2007-05-16

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： AOYAMA TATSUJI ,  MURASHIMA YUJI ,  MARUOKA TOMOHIRO ,  KURANUKI KENJI

    IPC: H01G9/04

    Abstract: PROBLEM TO BE SOLVED: To miniaturize a solid electrolytic capacitor used for various kinds of electronic equipment, and to increase its capacity.
    SOLUTION: The solid electrolytic capacitor has an element 1 formed by providing an anode electrode section 3 and a cathode electrode section 4 on electrode foil. The electrode foil comprises: a base material made of valve action metal foil; and the vapor-deposited layer of the valve action metal formed on the surface of the base material by vapor deposition. In the vapor-deposited layer, a mode of a void diameter is 0.02-0.10 μm, and the thickness (both surfaces) of the vapor-deposited layer is 20-80 μm, thus miniaturizing the solid electrolytic capacitor by thinning and increasing its capacity.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了使用于各种电子设备的固体电解电容器的小型化，并且增加其容量。 解决方案：固体电解电容器具有通过在电极箔上设置阳极电极部分3和阴极电极部分4形成的元件1。 电极箔包括：由阀动作金属箔制成的基材; 以及通过气相沉积在基材的表面上形成的阀作用金属的蒸镀层。 在蒸镀层中，空穴直径为0.02〜0.10μm，蒸镀层的厚度（两面）为20〜80μm，通过变薄而使固体电解电容器小型化， 。 版权所有（C）2009，JPO＆INPIT

    Piezo electric element and piezo electric device using the same
    9.
    发明专利
    Piezo electric element and piezo electric device using the same 审中-公开
    PIEZO电子元件和使用它的PIEZO电子器件

    公开(公告)号：JP2014157959A

    公开(公告)日：2014-08-28

    申请号：JP2013028684

    申请日：2013-02-18

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： NAKAMURA YUKI ,  MURASHIMA YUJI ,  KOMAKI KAZUKI

    IPC: H01L41/09 ,  G01P15/10 ,  H01L41/08 ,  H01L41/18 ,  H01L41/187

    Abstract: PROBLEM TO BE SOLVED: To provide a compact piezo electric device and a piezo electric element, having increased detection signal and reduced noise.SOLUTION: The piezo electric element includes: a substrate 11 having Si as a main component; and a piezoelectric film 13 sandwiched between two electrode films formed on the substrate 11, wherein an absolute value of a piezoelectric output constant gof the piezoelectric film 13 is 10[10Vm/N] or more, and dielectric constant εis 600 or less.

    Abstract translation: 要解决的问题：提供一种紧凑型压电装置和压电元件，具有增加的检测信号和降低的噪声。解决方案：压电元件包括​​：以Si为主要成分的基板11; 以及夹在形成在基板11上的两个电极膜之间的压电膜13，其中压电膜13的压电输出常数g的绝对值为10 [10V / N]以上，介电常数ε为600以下。

    Variable capacitive element
    10.
    发明专利
    Variable capacitive element 审中-公开
    可变电容元件

    公开(公告)号：JP2011211029A

    公开(公告)日：2011-10-20

    申请号：JP2010078452

    申请日：2010-03-30

    Applicant: Panasonic Corp ,  パナソニック株式会社

    Inventor： MURASHIMA YUJI

    IPC: H01G7/06 ,  H01G7/00

    Abstract: PROBLEM TO BE SOLVED: To reduce the size of a variable capacitive element using a ferroelectric substance that can attain expansion of a variable region of electrostatic capacity, while at the same time, maintaining a high Q-value.SOLUTION: The variable capacitive element using a ferroelectric substance is provided with a ferroelectric layer 21, connected between first and second electrodes 22, 24; the ferroelectric layer 21 has a Perovskite structure that is phase-transformed from cubic crystal to tetragonal phase by compression stress Y that the ferroelectric layer has inside; and by using the ferroelectric layer, the variable capacitive element can be reduced in size.

    Abstract translation: 要解决的问题：为了减小使用能够实现静电容量可变区域的扩展的铁电物质的可变电容元件的尺寸，同时保持高Q值。解决方案：使用可变电容元件 铁电体物质设置有连接在第一和第二电极22,24之间的铁电层21; 铁电层21具有通过压电应力Y从铁素体层内侧向立方晶相向四方晶相的钙钛矿型结构。 并且通过使用铁电层，可以减小可变电容元件的尺寸。

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