Patent search ap:("PANASONIC CORP") AND inv:"OYA MITSUAKI" Page 1

1.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
Title translation: NESSRIDHALBLEITERELEMENT UND HERSTELLUGSVERFAHRENDAFÜR

公开(公告)号：EP2479807A4

公开(公告)日：2012-10-24

申请号：EP10838943

申请日：2010-12-21

Applicant: PANASONIC CORP

Inventor： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , KATO RYOU

IPC: H01L33/40 , H01L33/16 , H01L33/32

CPC classification number: H01L33/32 , H01L33/16 , H01L33/40 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , Y10T436/112499 , H01L2924/00012

2.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
Title translation: 氮化物半导体元件及其制造方法

公开(公告)号：EP2226853A4

公开(公告)日：2012-05-02

申请号：EP09815447

申请日：2009-06-04

Applicant: PANASONIC CORP

Inventor： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , KATO RYOU

IPC: H01L33/40

CPC classification number: H01L33/32 , H01L29/2003 , H01L33/0095 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/44 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2924/00012

3.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开

公开(公告)号：EP2555258A4

公开(公告)日：2013-11-06

申请号：EP11765192

申请日：2011-03-15

Applicant: PANASONIC CORP

Inventor： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , ISOZAKI AKIHIRO

IPC: H01L33/32 , H01L33/16 , H01L33/40 , H01S5/042 , H01S5/32 , H01S5/323 , H01S5/343

CPC classification number: H01L21/02579 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L23/53247 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/13 , H01L2924/12032 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341 , H01L2924/00

Abstract: A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m -plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an Al x In y Ga z N (where x+y+z=1, x‰¥0, y‰¥0, and z‰¥0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

4.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开
Title translation: NITRIDHALBLEITERELEMENT及其制造方法

公开(公告)号：EP2541624A4

公开(公告)日：2013-05-15

申请号：EP11765181

申请日：2011-02-23

Applicant: PANASONIC CORP

Inventor： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , KATO RYOU

IPC: H01L33/32 , H01L21/28 , H01L33/40 , H01S5/042 , H01S5/343

CPC classification number: H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341

5.

发明公开
NITROGEN-BASED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR 审中-公开
Title translation: 半导体元件生产氮基和过程

公开(公告)号：EP2352184A4

公开(公告)日：2012-11-14

申请号：EP10758191

申请日：2010-03-17

Applicant: PANASONIC CORP

Inventor： OYA MITSUAKI , YOKOGAWA TOSHIYA , YAMADA ATSUSHI , ISOZAKI AKIHIRO

IPC: H01L33/32 , H01L21/28 , H01L33/40

CPC classification number: H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40

6.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开

公开(公告)号：EP2273573A4

公开(公告)日：2012-11-14

申请号：EP10750561

申请日：2010-03-09

Applicant: PANASONIC CORP

Inventor： OYA MITSUAKI , YOKOGAWA TOSHIYA , YAMADA ATSUSHI , KATA RYOU

IPC: H01L33/32 , H01L21/28 , H01L29/04 , H01L29/20 , H01L29/45 , H01L33/16 , H01L33/40

CPC classification number: H01L33/40 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341

7.

发明公开
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE 审中-公开
Title translation: 氮化物半导体发光元件，照明装置，液晶显示装置，制造方法的氮化物半导体的发光元件及其制造方法的照明装置

公开(公告)号：EP2418696A4

公开(公告)日：2014-02-19

申请号：EP09842932

申请日：2009-07-09

Applicant: PANASONIC CORP

Inventor： YOKOGAWA TOSHIYA , INOUE AKIRA , FUJIKANE MASAKI , OYA MITSUAKI , YAMADA ATSUSHI , YANO TADASHI

IPC: H01L25/075 , H01L33/16 , H01L33/32

CPC classification number: H01L25/0753 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00

8.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开

公开(公告)号：EP2530747A4

公开(公告)日：2013-09-04

申请号：EP11765203

申请日：2011-03-25

Applicant: PANASONIC CORP

Inventor： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , ISOZAKI AKIHIRO

IPC: H01L33/16 , H01L21/285 , H01L29/04 , H01L29/43 , H01L33/32 , H01L33/40

CPC classification number: H01L33/405 , H01L21/28575 , H01L24/14 , H01L29/045 , H01L29/452 , H01L33/16 , H01L33/32 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2924/00

9.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME 审中-公开
Title translation: 氮化物半导体元件及其制造方法

公开(公告)号：EP2416387A4

公开(公告)日：2012-12-12

申请号：EP10758184

申请日：2010-03-16

Applicant: PANASONIC CORP

Inventor： OYA MITSUAKI , YOKOGAWA TOSHIYA , YAMADA ATSUSHI , ISOZAKI AKIHIRO

IPC: H01L33/40 , H01L29/45 , H01L33/00 , H01L33/16 , H01L33/32

CPC classification number: H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016

10.

发明公开
NITRIDE-BASED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR 有权
Title translation: 半导体元件及其制造方法氮化物

公开(公告)号：EP2352165A4

公开(公告)日：2012-11-14

申请号：EP10758190

申请日：2010-03-17

Applicant: PANASONIC CORP

Inventor： OYA MITSUAKI , YOKOGAWA TOSHIYA , YAMADA ATSUSHI , ISOZAKI AKIHIRO

IPC: H01L21/28 , H01L33/32 , H01L33/40

CPC classification number: H01L33/40 , H01L33/32 , H01S5/0425 , H01S5/3202 , H01S5/32341

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