公开(公告)号：MY139855A

公开(公告)日：2009-11-30

申请号：MYPI20060523

申请日：2006-02-08

Applicant: PHISON ELECTRONICS CORP

Inventor： CORP PHISON ELECTRONICS

IPC: G06F12/02

Abstract: A FLASH MEMORY AND A METHOD FOR UTILIZINO THE SAME ARE DISCLOSED. THE METHOD FOR UTILIZING A FLASH MEMORY INCLUDES THE STEPS OF: A) PROVIDING A FLASH MEMORY OF A SINGLE CHIP; B) FORMATTING THE FLASH MEMORY AND MARKING BAD BLOCKS OF THE FLASH MEMORY AS A BAD-BLOCK AREA FREE OF RELIABLE SAVED DATA; C) CALCULATING A CAPACITY OF AN AVAILABLE MEMORY WITHIN THE FLASH MEMORY, WHEREIN THE AVAILABLE MEMORY EXCLUDES THE BAD-BLOCK AREA OF THE FLASH MEMORY; AND D) DIVIDING THE AVAILABLE MEMORY INTO A FIRST STORING MEMORY AND A SECOND MEMORY, WHEREIN THE FIRST STORING MEMORY AND THE SECOND STORING MEMORY HAVE DIFFERENT CAPACITIES.