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    EXTENDED WAVELENGTH STRAINED LAYER LASERS
    2.
    发明申请
    EXTENDED WAVELENGTH STRAINED LAYER LASERS 审中-公开
    扩展的波长应变层激光

    公开(公告)号：WO1998013879A1

    公开(公告)日：1998-04-02

    申请号：PCT/US1997016961

    申请日：1997-09-24

    Applicant: PICOLIGHT INCORPORATED

    Inventor： PICOLIGHT INCORPORATED ,  JEWELL, Jack, L. ,  TEMKIN, Henryk

    IPC: H01L29/06

    CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01S5/0211 ,  H01S5/18311 ,  H01S5/2215 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306

    Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light-emitting devices at wavelengths of 1.3 mu m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (a) utilizing new superlattice structures (58) having high In concentrations in the active region, (b) utilizing strain compensation (56, 64) to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (c) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure (60), and (d) use of nominal (111) oriented substrates (52) to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

    Abstract translation: 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处的发光器件的操作。 这些方法或技术例如包括：（a）利用在有源区域中具有高In浓度的新的超晶格结构（58），（b）利用应变补偿（56,64）增加量子阱的可用层厚度， 适当的高浓度，（c）在假晶InGaAsN / GaAs激光器结构（60）中适当地利用少量的氮（N），和（d）使用标称（111）取向的衬底（52）来增加可用层厚度 对于具有适当高In浓度的量子阱。

    APERTURE COMPRISING AN OXIDIZED REGION AND A SEMICONDUCTOR MATERIAL
    3.
    发明申请
    APERTURE COMPRISING AN OXIDIZED REGION AND A SEMICONDUCTOR MATERIAL 审中-公开
    包含氧化区域的孔径和半导体材料

    公开(公告)号：WO1998008280A1

    公开(公告)日：1998-02-26

    申请号：PCT/US1997014237

    申请日：1997-08-18

    Applicant: PICOLIGHT INCORPORATED ,  JEWELL, Jack, L.

    Inventor： PICOLIGHT INCORPORATED

    IPC: H01S03/133

    CPC classification number: H01S5/18372 ,  H01L33/105 ,  H01L33/145 ,  H01S5/18311 ,  H01S5/18341

    Abstract: An improved aperture (10) is provided. The aperture (10) comprises: at least a first layer (12); the first layer (12) being oxidized in a laterally oriented first region (14); the first layer (12) being modified within a laterally oriented second region (16), the second region (16) being oxidized less than the first region (14); a second layer (18) deposited in communication with the first layer (12), the second layer (18) being oxidized less than the first layer (12); and a non-planar boundary (22) having top and bottom boundary surfaces and side walls (28) connecting the top and bottom boundary surfaces, the top boundary surface defined as a top surface of the second layer (18) above the laterally oriented first region (14) and the bottom boundary surface defined as a bottom surface of the laterally oriented second region (16), the first and second regions (14, 16) defining the aperture (10).

    Abstract translation: 提供改进的孔（10）。 孔（10）包括：至少第一层（12）; 所述第一层（12）在横向取向的第一区域（14）中被氧化; 所述第一层（12）在横向定向的第二区域（16）内被修改，所述第二区域（16）被氧化得小于所述第一区域（14）; 沉积与第一层（12）连通的第二层（18），第二层（18）被氧化得小于第一层（12）; 和具有顶部和底部边界表面的非平面边界（22）和连接顶部和底部边界表面的侧壁（28），顶部边界表面被限定为第二层（18）的顶部表面上方横向定向的第一 区域（14）和限定为横向定向的第二区域（16）的底表面的底部边界表面，所述第一和第二区域（14,16）限定孔（10）。

    EXTENDED WAVELENGTH LASERS HAVING A RESTRICTED GROWTH SURFACE AND GRADED LATTICE MISMATCH
    5.
    发明申请
    EXTENDED WAVELENGTH LASERS HAVING A RESTRICTED GROWTH SURFACE AND GRADED LATTICE MISMATCH 审中-公开
    具有限制性生长表面和分级尺寸误差的扩展波长激光

    公开(公告)号：WO1998022996A2

    公开(公告)日：1998-05-28

    申请号：PCT/US1997019493

    申请日：1997-10-28

    Applicant: PICOLIGHT INCORPORATED

    Inventor： PICOLIGHT INCORPORATED ,  JEWELL, Jack, L.

    IPC: H01S00/00

    CPC classification number: H01S5/18311 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/22 ,  H01S5/3201 ,  H01S5/3202

    Abstract: An improved semiconductor structure is provided. The semiconductor structure comprises a first layer, the first layer having a restricted growth surface having a region with a transverse dimension D, the first layer having a first lattice constant L1; a first, last and at least one intermediate transition layers, the transition layers forming a transition region, the transition region disposed above the first layer, the transition region having a vertical tickness T, and where at least one of the transition layers has lattice constants between L1 and a second lattice constant L2 where the first transition layer has a lattice constant closer to the L1 than L2 and the last transition layer has a lattice constant closer to the L2 than L1; and a second layer disposed on the transition region, the second layer having the second lattice constant L2; wherein: the transition region has an average fractional change in lattice constant characterized by kappa where kappa = (D/T) {(L2 - L1)/L1}, where 0 /=2 mu m.

    Abstract translation: 提供了一种改进的半导体结构。 半导体结构包括第一层，第一层具有受限制的生长表面，其具有横向尺寸D的区域，第一层具有第一晶格常数L1; 第一，最后和至少一个中间过渡层，所述过渡层形成过渡区域，所述过渡区域设置在所述第一层上方，所述过渡区域具有垂直刻度T，并且其中所述过渡层中的至少一个具有晶格常数 在L1和第二晶格常数L2之间，其中第一过渡层具有比L2更靠近L1的晶格常数，并且最后的过渡层具有比L1更靠近L2的晶格常数; 以及设置在所述过渡区域上的第二层，所述第二层具有所述第二晶格常数L2; 其中：所述过渡区域具有以kappa为特征的晶格常数的平均分数变化，其中kappa =（D / T）{（L2-L1）/ L1}，其中0≤I≤I≤10，其中D> 2亩

    LIGHT EMITTING DEVICE HAVING AN ELECTRICAL CONTACT THROUGH A LAYER CONTAINING OXIDIZED MATERIAL
    6.
    发明申请
    LIGHT EMITTING DEVICE HAVING AN ELECTRICAL CONTACT THROUGH A LAYER CONTAINING OXIDIZED MATERIAL 审中-公开
    具有通过包含氧化材料的层的电气接触器的发光装置

    公开(公告)号：WO1997047061A1

    公开(公告)日：1997-12-11

    申请号：PCT/US1997009559

    申请日：1997-06-05

    Applicant: PICOLIGHT INCORPORATED

    Inventor： PICOLIGHT INCORPORATED ,  JEWELL, Jack, L.

    IPC: H01S03/103

    CPC classification number: H01S5/18341 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18372 ,  H01S5/2059 ,  H01S5/2081

    Abstract: An improved light emitting device (10) comprises: a first conductive layer (16) having a first conductivity type; a light emitting material (20) disposed above the first conductive layer and in electrical communication therewith; a current aperture region (24) comprising at least one layer of oxidizable material, the oxidizable material having a first region (36) which is non-oxidized surrounded by a second region (34) which is oxidized in order to form a current aperture in the oxidizable material, the current aperture region (24) further comprising a third region (36) being non-oxidized and at least adjacent to the second region (34), the current aperture region (24) disposed above the light emitting material and in electrical communication therewith; a second conductive layer (28) having a second conductivity type, the second conductive layer being disposed above the current aperture region (24) and in electrical communication therewith; at least one electrically conductive channel (38, 12) for providing electrical communication to the light emitting material, the channel extending through the third region of the oxidizable material. Additionally, a method for constructing the light emitting device (10) is also provided.

    Abstract translation: 改进的发光器件（10）包括：具有第一导电类型的第一导电层（16） 设置在所述第一导电层上方并与其电连通的发光材料（20）; 包含至少一层可氧化材料的电流开口区域（24），所述可氧化材料具有第一区域（36），所述第一区域（36）被被氧化的第二区域（34）围绕，所述第二区域被氧化以形成电流孔 所述电流开口区域（24）还包括未被氧化并且至少邻近所述第二区域（34）的第三区域（36），所述电流开口区域（24）设置在所述发光材料的上方， 与其通电; 具有第二导电类型的第二导电层（28），所述第二导电层设置在所述电流开口区域（24）的上方并与之电连通; 至少一个用于向所述发光材料提供电连通的导电通道（38,12），所述通道延伸穿过可氧化材料的第三区域。 此外，还提供了一种用于构造发光器件（10）的方法。

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