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公开(公告)号：US20230031112A1
公开(公告)日：2023-02-02
申请号：US17739780
申请日：2022-05-09
Applicant: PIXART IMAGING INC.
Inventor： Ming-Han TSAI , Chih-Fan HU
Abstract: There is provided a far infrared (FIR) sensor device including a substrate, a thermopile structure and a heat absorption layer. The thermopile structure is arranged on the substrate. The heat absorption layer covers upon the thermopile structure, wherein the heat absorption layer has a hollow space which is formed by etching a metal layer in the heat absorption layer.
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