公开(公告)号：JP2002231126A

公开(公告)日：2002-08-16

申请号：JP2001389100

申请日：2001-12-21

Applicant: PIXTECH SA

Inventor： BOURCHEIX CHRISTOPHE

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To accurately dispose the openings of extracted grids and collected grids formed on the upper surface of a cathode. SOLUTION: This production method for a structure comprises the steps of forming, on a substrate, a first insulation layer, a first metal-covered layer, a second insulation layer, and a second metal-covered layer stacked each other, forming a first window corresponding to the profile of a first opening and a second window having an external profile corresponding to the internal profile of a second opening on the second metal-covered layer and the second insulation layer, forming a third window larger than the first window in a masking layer, etching the first metal-covered layer in the first window, removing the second metal-covered layer under the masking layer to the inner periphery of the second window, etching the first insulation layer by a selected distance and removing the second insulation layer in the profile line of the second window, and removing the masking layer.

公开(公告)号：FR2818797B1

公开(公告)日：2003-06-06

申请号：FR0016979

申请日：2000-12-22

Applicant: PIXTECH SA

Inventor： BOURCHEIX CHRISTOPHE

IPC: H01J9/02 ,  H01J1/30

Abstract: Method for fabricating a structure involves: forming on a substrate, first insulating layer, first level of metallization, second insulating layer and second level of metallization; opening first and second windows; forming third windows; engraving first level of metallization; engraving first insulating layer and simultaneously eliminating second insulating layer inside contour of second windows. A method for the fabrication of a structure consists of: (a) forming on a substrate (1) a pile of a first insulating layer (7), a first level of metallization (6), a second insulating layer (8) and a second level of metallization (9); (b) opening, in the second level of metallization and the second insulating layer, some first windows corresponding to the contour of the first openings and some second windows of which the external contour corresponds to the internal contour of the second openings; (c) forming in a masking layer (20) some third windows overlapping the first windows: (d) engraving the first level of metallization under the masking layer up to the internal periphery of the second windows; (e) engraving to a chosen distance the first insulating layer and simultaneously eliminating the second insulating layer inside the contour of the second windows; (f) and eliminating the masking layer.

公开(公告)号：FR2818797A1

公开(公告)日：2002-06-28

申请号：FR0016979

申请日：2000-12-22

Applicant: PIXTECH SA

Inventor： BOURCHEIX CHRISTOPHE

IPC: H01J9/02 ,  H01J1/30

Abstract: Method for fabricating a structure involves: forming on a substrate, first insulating layer, first level of metallization, second insulating layer and second level of metallization; opening first and second windows; forming third windows; engraving first level of metallization; engraving first insulating layer and simultaneously eliminating second insulating layer inside contour of second windows. A method for the fabrication of a structure consists of: (a) forming on a substrate (1) a pile of a first insulating layer (7), a first level of metallization (6), a second insulating layer (8) and a second level of metallization (9); (b) opening, in the second level of metallization and the second insulating layer, some first windows corresponding to the contour of the first openings and some second windows of which the external contour corresponds to the internal contour of the second openings; (c) forming in a masking layer (20) some third windows overlapping the first windows: (d) engraving the first level of metallization under the masking layer up to the internal periphery of the second windows; (e) engraving to a chosen distance the first insulating layer and simultaneously eliminating the second insulating layer inside the contour of the second windows; (f) and eliminating the masking layer.