公开(公告)号：US20130243032A1

公开(公告)日：2013-09-19

申请号：US13563017

申请日：2012-07-31

Applicant: Parthiban Arunasalam ,  Wayne C. Long

Inventor： Parthiban Arunasalam ,  Wayne C. Long

IPC: G01K13/02 ,  G01L7/00 ,  G01K1/00

CPC classification number: G01K13/02 ,  G01K15/005 ,  G01K2013/026 ,  G01K2201/00

Abstract: A superheat sensor includes a housing, a pressure sensor mounted within the housing, a temperature sensor that is integrated to the pressure sensor, and/or is external to the pressure sensor, a fluid passageway connecting the pressure sensor to a source of superheat fluid, and a processor.

Abstract translation: 过热传感器包括壳体，安装在壳体内的压力传感器，与压力传感器集成的温度传感器和/或压力传感器外部的流体通道，将压力传感器连接到过热流体源， 和处理器。

公开(公告)号：US09140613B2

公开(公告)日：2015-09-22

申请号：US13563017

申请日：2012-07-31

Applicant: Parthiban Arunasalam ,  Wayne C Long

Inventor： Parthiban Arunasalam ,  Wayne C Long

IPC: G01K1/00 ,  G01K1/08 ,  G01K1/14 ,  G01K13/02 ,  G01K15/00

CPC classification number: G01K13/02 ,  G01K15/005 ,  G01K2013/026 ,  G01K2201/00

Abstract: A superheat sensor includes a housing, a pressure sensor mounted within the housing, a temperature sensor that is integrated to the pressure sensor, and/or is external to the pressure sensor, a fluid passageway connecting the pressure sensor to a source of superheat fluid, and a processor.

Abstract translation: 过热传感器包括壳体，安装在壳体内的压力传感器，与压力传感器集成的温度传感器和/或压力传感器外部的流体通道，将压力传感器连接到过热流体源， 和处理器。

公开(公告)号：US09006844B2

公开(公告)日：2015-04-14

申请号：US13574343

申请日：2011-01-26

Applicant: Parthiban Arunasalam

Inventor： Parthiban Arunasalam

IPC: H01L21/30 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/036

Abstract: A method to prevent movable structures within a MEMS device, and more specifically, in recesses having one or more dimension in the micrometer range or smaller (i.e., smaller than about 10 microns) from being inadvertently bonded to non-moving structures during a bonding process. The method includes surface preparation of silicon both structurally and chemically to aid in preventing moving structures from bonding to adjacent surfaces during bonding, including during high force, high temperature fusion bonding.

Abstract translation: 一种防止MEMS器件内的可移动结构的方法，更具体地说，在具有在微米范围内或更小（即小于约10微米）的一个或多个维度的凹陷中的方法在粘合过程中不经意地结合到不移动的结构 。 该方法包括在结构和化学方面对硅进行表面处理，以帮助防止结合期间移动结构粘合到相邻表面，包括在高力，高温熔融粘合期间。

公开(公告)号：US20120295371A1

公开(公告)日：2012-11-22

申请号：US13574347

申请日：2011-01-26

Applicant: Parthiban Arunasalam

Inventor： Parthiban Arunasalam

IPC: H01L21/306

CPC classification number: H01L21/302 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2203/036 ,  H01L21/02057

Abstract: A non-abrading method to facilitate bonding of semiconductor components, such as silicon wafers, that have micro structural defects in a bonding interface surface. In a preferred method, micro structural defects are removed by forming an oxide layer on the bonding interface surface to a depth below the level of the defect, and then removing the oxide layer to expose a satisfactory surface for bonding, thereby increasing line yield and reducing scrap triggers in fabrication facilities.

Abstract translation: 用于促进在接合界面表面具有微观结构缺陷的诸如硅晶片的半导体部件的接合的非研磨方法。 在优选的方法中，通过在接合界面上形成氧化层到低于缺陷水平的深度除去微结构缺陷，然后除去氧化物层以暴露出令人满意的粘结表面，从而提高生产线产量并降低 制造设施中的废料触发。

公开(公告)号：US08956884B2

公开(公告)日：2015-02-17

申请号：US13574347

申请日：2011-01-26

Applicant: Parthiban Arunasalam

Inventor： Parthiban Arunasalam

IPC: H01L21/00 ,  H01L21/302 ,  B81C1/00 ,  H01L21/02

CPC classification number: H01L21/302 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2203/036 ,  H01L21/02057

Abstract: A non-abrading method to facilitate bonding of semiconductor components, such as silicon wafers, that have micro structural defects in a bonding interface surface. In a preferred method, micro structural defects are removed by forming an oxide layer on the bonding interface surface to a depth below the level of the defect, and then removing the oxide layer to expose a satisfactory surface for bonding, thereby increasing line yield and reducing scrap triggers in fabrication facilities.

Abstract translation: 用于促进在接合界面表面具有微观结构缺陷的诸如硅晶片的半导体部件的接合的非研磨方法。 在优选的方法中，通过在接合界面上形成氧化层到低于缺陷水平的深度除去微结构缺陷，然后除去氧化物层以暴露出令人满意的粘结表面，从而提高生产线产量并降低 制造设施中的废料触发。

公开(公告)号：US20120299129A1

公开(公告)日：2012-11-29

申请号：US13574343

申请日：2011-01-26

Applicant: Parthiban Arunasalam

Inventor： Parthiban Arunasalam

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B81B3/001 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/036

Abstract: A method to prevent movable structures within a MEMS device, and more specifically, in recesses having one or more dimension in the micrometer range or smaller (i.e., smaller than about 10 microns) from being inadvertently bonded to non-moving structures during a bonding process. The method includes surface preparation of silicon both structurally and chemically to aid in preventing moving structures from bonding to adjacent surfaces during bonding, including during high force, high temperature fusion bonding.

Abstract translation: 一种防止MEMS器件内的可移动结构的方法，更具体地说，在具有在微米范围内或更小（即小于约10微米）的一个或多个维度的凹陷中的方法在粘合过程中不经意地结合到不移动的结构 。 该方法包括在结构和化学方面对硅进行表面处理，以帮助防止结合期间移动结构粘合到相邻表面，包括在高力，高温熔融粘合期间。