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公开(公告)号：US10859442B2
公开(公告)日：2020-12-08
申请号：US16503517
申请日：2019-07-04
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US20170138795A1
公开(公告)日：2017-05-18
申请号：US15249214
申请日：2016-08-26
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
IPC: G01J5/16
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US10386240B2
公开(公告)日：2019-08-20
申请号：US16194385
申请日：2018-11-18
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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Patent Agency Ranking
公开(公告)号：US10161802B2
公开(公告)日：2018-12-25
申请号：US15917606
申请日：2018-03-10
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US20190323896A1
公开(公告)日：2019-10-24
申请号：US16503517
申请日：2019-07-04
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US20190086268A1
公开(公告)日：2019-03-21
申请号：US16194385
申请日：2018-11-18
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. Ahot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US20180202864A1
公开(公告)日：2018-07-19
申请号：US15917606
申请日：2018-03-10
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US09945726B2
公开(公告)日：2018-04-17
申请号：US15249214
申请日：2016-08-26
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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