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    Photolithographic system for exposing a wafer using a programmable mask
    2.
    发明申请
    Photolithographic system for exposing a wafer using a programmable mask 失效

    公开(公告)号：US20020027647A1

    公开(公告)日：2002-03-07

    申请号：US09871971

    申请日：2001-06-04

    Applicant: Pixelligent Technologies LLC.

    Inventor： Gregory D. Cooper ,  Richard M. Mohring

    IPC: G03B027/42

    CPC classification number: G03F7/70375 ,  G03F7/70291

    Abstract: The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its nullopennull state) or not transmit light to the wafer (referred to as its nullclosednull state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the nullopennull or nulltransparentnull state of a shutter) or be nullnon-amplifyingnull (its nullclosednull or nullopaquenull state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a nullprogrammable layernull. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

    Programmable photolithographic mask system and method
    4.
    发明申请
    Programmable photolithographic mask system and method 失效
    可编程光刻掩模系统及方法

    公开(公告)号：US20040051855A1

    公开(公告)日：2004-03-18

    申请号：US10603092

    申请日：2003-06-25

    Applicant: Pixelligent Technologies LLC.

    Inventor： Gregory D. Cooper ,  Richard M. Mohring

    IPC: G03B027/42

    CPC classification number: G03F7/70375 ,  G03F7/70291

    Abstract: The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its nullopennull state) or not transmit light to the wafer (referred to as its nullclosednull state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the nullopennull or nulltransparentnull state of a shutter) or be nullnon-amplifyingnull (its nullclosednull or nullopaquenull state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a nullprogrammable layernull. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

    Abstract translation: 本发明克服了现有的平版印刷微细加工工艺的许多缺点，同时提供了可以以更低成本显着提高制造更复杂的半导体芯片的能力的进一步改进。 用于曝光晶片的新型可编程结构允许在电子控制下改变光刻图案。 这提供了极大的灵活性，增加了生产量并且降低了芯片制造的成本并且提供了许多其他优点。 可编程结构由一组快门组成，可以被编程为将光传输到晶片（称为其“打开”状态）或不将光传输到晶片（称为其“关闭”状态））。 可编程结构可以包括或包括选择放大器的阵列。 因此，每个选择放大器被编程为放大光（有点类似于快门的“打开”或“透明”状态）或者是“非放大”（其“闭合”或“不透明”状态））。 在非放大状态下，入射光的一部分透过放大器材料。 快门和选择放大器可以串联工作以形成“可编程层”。 提供了一种可编程技术，用于创建可被实现为可行的生产技术的要被成像到晶片上的图案。 因此，本发明还提供了制造集成电路的技术。 衍射限制器可以用于提供与接触光刻相关联的某些优点，而不需要接触光刻的一些缺点。

    Programmable photolithographic mask system and method
    5.
    发明申请
    Programmable photolithographic mask system and method 失效
    可编程光刻掩模系统及方法

    公开(公告)号：US20020176062A1

    公开(公告)日：2002-11-28

    申请号：US10166615

    申请日：2002-06-12

    Applicant: Pixelligent Technologies LLC.

    Inventor： Gregory D. Cooper ,  Richard M. Mohring

    IPC: G03B027/42

    CPC classification number: G03F7/70375 ,  G03F7/70291

    Abstract: The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its nullopennull state) or not transmit light to the wafer (referred to as its nullclosednull state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the nullopennull or nulltransparentnull state of a shutter) or be nullnon-amplifyingnull (its nullclosednull or nullopaquenull state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a nullprogrammable layernull. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

    Abstract translation: 本发明克服了现有的平版印刷微细加工工艺的许多缺点，同时提供了可以以更低成本显着提高制造更复杂的半导体芯片的能力的进一步改进。 用于曝光晶片的新型可编程结构允许在电子控制下改变光刻图案。 这提供了极大的灵活性，增加了生产量并且降低了芯片制造的成本并且提供了许多其他优点。 可编程结构由一组快门组成，可以被编程为将光传输到晶片（称为其“打开”状态）或不将光传输到晶片（称为其“关闭”状态））。 可编程结构可以包括或包括选择放大器的阵列。 因此，每个选择放大器被编程为放大光（有点类似于快门的“打开”或“透明”状态）或者是“非放大”（其“闭合”或“不透明”状态））。 在非放大状态下，入射光的一部分透过放大器材料。 快门和选择放大器可以串联工作以形成“可编程层”。 提供了一种可编程技术，用于创建可被实现为可行的生产技术的要被成像到晶片上的图案。 因此，本发明还提供了制造集成电路的技术。 衍射限制器可以用于提供与接触光刻相关联的某些优点，而不需要接触光刻的一些缺点。

    Three-dimensional lithography by multiple two-dimensional pattern projection
    6.
    发明申请
    Three-dimensional lithography by multiple two-dimensional pattern projection 审中-公开
    通过多维二维图案投影进行三维光刻

    公开(公告)号：US20020061472A1

    公开(公告)日：2002-05-23

    申请号：US09988216

    申请日：2001-11-19

    Applicant: Pixelligent Technologies LLC.

    Inventor： Gregory D. Cooper ,  Erin F. Fleet

    IPC: G03F007/20

    CPC classification number: G03F7/70416 ,  G03F7/0037 ,  G03F7/70291

    Abstract: Two programmable masks are used for the exposure of three-dimensional patterns in a photosensitive material. This exposure technique takes advantages of symmetries and repeating structures in the exposure pattern to reduce the exposure time, while maintaining the flexibility to produce complicated three-dimensional shapes.

    Abstract translation: 使用两个可编程掩模来曝光感光材料中的三维图案。 该曝光技术具有曝光图案中的对称性和重复结构的优点，以减少曝光时间，同时保持产生复杂三维形状的灵活性。

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