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    Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
    2.
    发明公开
    Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure 审中-公开
    的IC的结构集成基板和载体以及制造方法这样的结构

    公开(公告)号：EP1890323A2

    公开(公告)日：2008-02-20

    申请号：EP07013968.8

    申请日：2007-07-17

    Applicant: Princo Corp.

    Inventor： Yang, Chih-Kuang

    IPC: H01L21/48 ,  H01L21/68 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H05K3/46 ,  H01L21/77

    CPC classification number: H05K3/0058 ,  H01L21/4857 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/49822 ,  H01L23/4985 ,  H01L2221/68327 ,  H01L2221/68345 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/30105 ,  H05K3/0052 ,  H05K3/467 ,  H05K3/4682 ,  H05K2203/016 ,  H01L2924/00

    Abstract: The present invention provides a structure (28) combining an IC integrated substrate (8) and a carrier (10), which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer (14) attached to the carrier. The materials of the carrier and the first dielectric layer are selected to prevent the IC integrated substrate from peeling off the carrier during processing and to allow the IC integrated substrate to naturally separate from the carrier after being cut, through the adhesion between the carrier and the first dielectric layer. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electrical devices (6) using the above structure. In one embodiment the IC integrated substrate comprises dielectric layers (14,16,18,20) with the metal layers (22,24,26) therebetween. In another embodiment the IC integrated substrate includes at least one semiconductor device (35).

    Abstract translation: 本发明提供了组合，以IC集成基板（8）和载体（10），其包括载体的结构（28），并在IC集成形成在载体上的底物。 该IC整合基板具有附接至所述支座的第一介电层（14）。 所述载体和所述第一介电层的材料进行选择，以防止在加工过程中剥离载体的IC的集成基板，以允许IC集成基板到自然地从载体切断后分开，通过载体和之间的粘附 第一介电层。 因此，本发明提供了一种制造上述结构和制造使用上述结构的电力设备（6）的方法的方法。 在一个实施例中的IC集成基板包括介电层（14,16,18,20）具有在它们之间的金属层（22,24,26）。 在另一实施例中的IC集成基板包括至少一个半导体器件（35）。

    Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
    4.
    发明公开
    Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure 审中-公开
    对于这样的结构具有集成IC和载体的基片的结构以及制造方法

    公开(公告)号：EP1890326A2

    公开(公告)日：2008-02-20

    申请号：EP07013966.2

    申请日：2007-07-17

    Applicant: Princo Corp.

    Inventor： Yang, Chih-Kuang

    IPC: H01L21/68 ,  H01L23/498 ,  H01L21/48

    CPC classification number: H01L21/7806 ,  H01L21/4857 ,  H01L21/6835 ,  H01L21/6836 ,  H01L29/78603 ,  H01L2221/68327 ,  H01L2221/68345 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: The present invention provides a structure combining an IC integrated substrate (30) and a carrier (21), which comprises a carrier (21) and an IC integrated substrate (30) formed on the carrier. The interface between the IC integrated substrate and the carrier has a specific area (23) at which the interface adhesion is different from that at the remaining area of the interface. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electronic devices using the above structure.

    Abstract translation: 本发明提供了组合，以IC集成基板（30）的结构和载体（21），它包括一个载体（21），并在IC整合基板（30）形成的载体上。 在IC之间的接口集成基板和所述载体具有一个特定的区域（23），在该界面粘附性不同于在界面处的剩余区域一样。 因此，本发明提供了一种制造上述结构和制造使用上述结构的电子装置的方法的方法。

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