公开(公告)号：US10468151B2

公开(公告)日：2019-11-05

申请号：US15332938

申请日：2016-10-24

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Muhammad Ashraful Alam ,  Ruiyi Chen ,  Suprem R. Das ,  David B. Janes ,  Changwook Jeong ,  Mark Lundstrom

IPC: H01B1/02 ,  B82Y40/00 ,  B32B15/16 ,  G02F1/1343 ,  H01L31/0224 ,  H01L51/44 ,  H01L31/18 ,  H01B1/04 ,  B82Y10/00 ,  H01L29/16 ,  H01L29/41 ,  H01L31/028

Abstract: Hybrid transparent conducting materials are disclosed with combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and conductive nanostructures preferably are silver nanowires.

公开(公告)号：US11967629B2

公开(公告)日：2024-04-23

申请号：US17253180

申请日：2019-06-22

Applicant: Kansas State University Research Foundation ,  Purdue Research Foundation

Inventor： Suprem R. Das ,  David B. Janes ,  Jiseok Kwon

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/43 ,  H01L29/66 ,  H01L29/76

CPC classification number: H01L29/435 ,  H01L21/02568 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7606

Abstract: A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel region includes a compound having a transition metal and a chalcogen. The thickness of the channel region is about 3 to about 40 atomic layers.

公开(公告)号：US11515057B2

公开(公告)日：2022-11-29

申请号：US17062788

申请日：2020-10-05

Applicant: Purdue Research Foundation

Inventor： Muhammad Ashraful Alam ,  Ruiyi Chen ,  Suprem R. Das ,  David B. Janes ,  Changwook Jeong ,  Mark Lundstrom

IPC: H01B1/02 ,  H01B1/04 ,  H01L31/0224 ,  B82Y40/00 ,  G02F1/1343 ,  H01L31/18 ,  H01L51/44 ,  B82Y10/00 ,  H01L29/41 ,  H01L29/16 ,  H01L31/028

Abstract: Hybrid transparent conducting materials are disclosed which combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and the conductive nanostructures preferably are silver nanowires.

公开(公告)号：US20210280685A1

公开(公告)日：2021-09-09

申请号：US17253180

申请日：2019-06-22

Applicant: Kansas State University Research Foundation ,  Purdue Research Foundation

Inventor： Suprem R. Das ,  David B. Janes ,  Jiseok Kwon

IPC: H01L29/43 ,  H01L29/24 ,  H01L29/76 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel region includes a compound having a transition metal and a chalcogen. The thickness of the channel region is about 3 to about 40 atomic layers.