公开(公告)号：DE69614674D1

公开(公告)日：2001-09-27

申请号：DE69614674

申请日：1996-03-09

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS TATE ,  WARREN L ,  TUTTLE A

IPC: H01L21/8247 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

Abstract: An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.