公开(公告)号：DE69318294T2

公开(公告)日：1998-11-26

申请号：DE69318294

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH ,  BULLINGTON JEFF ,  MONTROSS CARL

IPC: H01L27/04 ,  G11C11/22 ,  H01G4/10 ,  H01G7/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/3205 ,  H01L21/768

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.

公开(公告)号：DE69318294D1

公开(公告)日：1998-06-04

申请号：DE69318294

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH ,  BULLINGTON JEFF ,  MONTROSS CARL

IPC: H01L27/04 ,  G11C11/22 ,  H01G4/10 ,  H01G7/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/3205 ,  H01L21/768

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.