INTEGRATED CAPACITIVELY-COUPLED BIAS CIRCUIT FOR RF MEMS SWITCHES
    1.
    发明申请
    INTEGRATED CAPACITIVELY-COUPLED BIAS CIRCUIT FOR RF MEMS SWITCHES 审中-公开
    用于RF MEMS开关的集成电容耦合偏置电路

    公开(公告)号:WO2015183841A1

    公开(公告)日:2015-12-03

    申请号:PCT/US2015/032498

    申请日:2015-05-26

    Abstract: A switchable capacitor (100) including a first electrode (104), a dielectric layer (110) on the first electrode (104), a second electrode (106) configured to be suspended in an undeflected position over the dielectric layer (110) in a de-activated state, and to deflect toward the first electrode (104) in an activated state in response to a voltage difference between the two electrodes (104,106), a gap between the second electrode (106) and the dielectric layer (110) in the activated state being less than a corresponding gap in the de-activated state, and a capacitor (120) having a first and second end, coupled to one of the electrodes at the first end, and configured to reduce the voltage difference between the electrodes (104,106) as the second electrode (106) deflects toward the first electrode (104) in the activated state, wherein the voltage difference between the electrodes corresponds to a bias voltage applied across the second end of the capacitor (120) and an other one of the first (104) and second (106) electrodes.

    Abstract translation: 一种可切换电容器(100),包括第一电极(104),第一电极(104)上的电介质层(110),第二电极(106),被配置为悬置在电介质层(110)上的未偏转位置 响应于两个电极(104,106)之间的电压差,第二电极(106)和电介质层(110)之间的间隙,在激活状态下朝着第一电极(104)偏转, 在所述激活状态小于所述去激活状态下的对应间隙,以及具有第一端和第二端的电容器(120),所述电容器(120)在所述第一端处耦合到所述电极中的一个,并且被配置为降低 作为第二电极(106)的电极(104,106)在激活状态下朝向第一电极(104)偏转,其中电极之间的电压差对应于施加在电容器(120)的第二端上的偏置电压,另一个 一个f 第一(104)和第二(106)电极。

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