公开(公告)号：EP0285326B1

公开(公告)日：1993-09-15

申请号：EP88302625.4

申请日：1988-03-24

Applicant: RAYTHEON COMPANY

Inventor： Dibiase, Robert ,  Waterman, Raymond C., Jr. ,  Blight, Ronald E. ,  Galani, Zvi ,  Schloemann, Ernst F.R.A.

IPC: H01P1/218

CPC classification number: H01P1/218

公开(公告)号：EP0293231A3

公开(公告)日：1990-09-12

申请号：EP88304840.7

申请日：1988-05-27

Applicant: RAYTHEON COMPANY

Inventor： Schloemann, Ernst F.R.A.

IPC: G11C11/14 ,  G11C7/00

CPC classification number: G11C14/00 ,  G11C5/005 ,  G11C11/14

Abstract: A random-access memory has a plurality of memory cells (12ij). Each cell (12ij) includes a magnetic storage element (30). The magnetic storage element (30) includes a thin film of magnetic material (74) disposed on a semiconductor substrate (70) and having further disposed thereon transistors (22a,22b) connected in a flip-flop configuration. The thin magnetic film (74) has different remanent magnetization states used for information storage. A pair of strip conductors (78,79) used to provide connections (23) to the flip-flop configuration of the transistors (22a,22b) are magneticaly coupled to the remanent magnetization states. One of the currents (123a,123b) passed to the gates of the flip-flop transistors (22a,22b) is delayed by one of the remanent states relative to the other current so that the state of the flip-flop is determined by the state of the magnetic storage element (30). Preferably a pair of mutually orthogonal remanent states is used for information storage to give the storage cell a relatively high frequency response.

公开(公告)号：EP0285326A2

公开(公告)日：1988-10-05

申请号：EP88302625.4

申请日：1988-03-24

Applicant: RAYTHEON COMPANY

Inventor： Dibiase, Robert ,  Waterman, Raymond C., Jr. ,  Blight, Ronald E. ,  Galani, Zvi ,  Schloemann, Ernst F.R.A.

IPC: H01P1/218

CPC classification number: H01P1/218

Abstract: A magnetically tuned resonant circuit (10) includes a ferrimagnetic or gyromagnetic body (46) such as a YIG sphere which is disposed within a r.f. structure (30). The r.f. structure (30) is disposed between a pair of pole pieces (24,38) of a biasing magnet and flux return path (20). To reduce fluctuations in magnetic fields through the gyromagnetic body (46), the body (46) is isolated from conductive surfaces, or the bulk of conductive surfaces in the region adjacent to the magnetic body (46) are reduced. A break (131a,131b) may be provided in the electrical continuity around the r.f. structure (30). These features reduce the magnitude of thermally induced eddy current flow in conductive regions adjacent to the resonant body (46) and hence reduce random magnetic field variations which produce random variations in the frequency characteristics of the magnetically tuned resonant circuit (10).

Abstract translation: 磁调谐谐振电路（10）包括铁磁体或回旋磁体（46），例如YIG球，其设置在r.f.内。 结构（30）。 r.f. 结构（30）设置在偏置磁体的一对极片（24,38）和磁通返回路径（20）之间。 为了减少通过回旋磁体（46）的磁场的波动，主体（46）与导电表面隔离，或者与磁体（46）相邻的区域中的导体表面的体积减小。 断路（131a，131b）可以以围绕r.f的电连续性提供。 结构（30）。 这些特征减小了与谐振体（46）相邻的导电区域中的热感应涡流的大小，并且因此减小了在磁调谐的谐振电路（10）的频率特性中产生随机变化的随机磁场变化。

公开(公告)号：EP0285326A3

公开(公告)日：1988-12-28

申请号：EP88302625

申请日：1988-03-24

Applicant: RAYTHEON COMPANY

Inventor： Dibiase, Robert ,  Waterman, Raymond C., Jr. ,  Blight, Ronald E. ,  Galani, Zvi ,  Schloemann, Ernst F.R.A.

IPC: H01P01/218

CPC classification number: H01P1/218

Abstract: A magnetically tuned resonant circuit (10) includes a ferrimagnetic or gyromagnetic body (46) such as a YIG sphere which is disposed within a r.f. structure (30). The r.f. structure (30) is disposed between a pair of pole pieces (24,38) of a biasing magnet and flux return path (20). To reduce fluctuations in magnetic fields through the gyromagnetic body (46), the body (46) is isolated from conductive surfaces, or the bulk of conductive surfaces in the region adjacent to the magnetic body (46) are reduced. A break (131a,131b) may be provided in the electrical continuity around the r.f. structure (30). These features reduce the magnitude of thermally induced eddy current flow in conductive regions adjacent to the resonant body (46) and hence reduce random magnetic field variations which produce random variations in the frequency characteristics of the magnetically tuned resonant circuit (10).

公开(公告)号：EP0293231A2

公开(公告)日：1988-11-30

申请号：EP88304840.7

申请日：1988-05-27

Applicant: RAYTHEON COMPANY

Inventor： Schloemann, Ernst F.R.A.

IPC: G11C11/14 ,  G11C7/00

CPC classification number: G11C14/00 ,  G11C5/005 ,  G11C11/14

Abstract: A random-access memory has a plurality of memory cells (12ij). Each cell (12ij) includes a magnetic storage element (30). The magnetic storage element (30) includes a thin film of magnetic material (74) disposed on a semiconductor substrate (70) and having further disposed thereon transistors (22a,22b) connected in a flip-flop configuration. The thin magnetic film (74) has different remanent magnetization states used for information storage. A pair of strip conductors (78,79) used to provide connections (23) to the flip-flop configuration of the transistors (22a,22b) are magneticaly coupled to the remanent magnetization states. One of the currents (123a,123b) passed to the gates of the flip-flop transistors (22a,22b) is delayed by one of the remanent states relative to the other current so that the state of the flip-flop is determined by the state of the magnetic storage element (30). Preferably a pair of mutually orthogonal remanent states is used for information storage to give the storage cell a relatively high frequency response.

Abstract translation: 随机存取存储器具有多个存储单元（12ij）。 每个单元（12ij）包括磁存储元件（30）。 磁存储元件（30）包括设置在半导体衬底（70）上的磁性材料（74）的薄膜，并且还设置有以触发器配置连接的晶体管（22a，22b）。 薄磁膜（74）具有用于信息存储的不同的剩余磁化状态。 用于向晶体管（22a，22b）的触发器配置提供连接（23）的一对带状导体（78,79）被磁耦合到剩余磁化状态。 传递到触发器晶体管（22a，22b）的栅极的电流（I23a，I23b）中的一个相对于另一个电流被延迟了剩余状态中的一个，使得触发器的状态由 磁存储元件（30）的状态。 优选地，一对相互正交的剩余状态用于信息存储以给予存储单元相对较高的频率响应。