公开(公告)号：WO2016024946A1

公开(公告)日：2016-02-18

申请号：PCT/US2014/050589

申请日：2014-08-11

Applicant: RAYTHEON COMPANY

Inventor： KENNEDY, Adam, M. ,  DIEP, Buu, Q. ,  BLACK, Stephen, H. ,  WONG, Tse, E. ,  KOCIAN, Thomas, Allan ,  TRACY, Gregory, D.

IPC: B81C1/00 ,  H01L23/10 ,  H01L23/00

CPC classification number: H01L23/10 ,  B81B7/0051 ,  B81B2201/0207 ,  B81C2203/0109 ,  B81C2203/035 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A sealed package having a device 102 disposed on a wafer structure and a lid structure 108 bonded to the device wafer. The device wafer includes: a substrate 104; a metal ring 107DW disposed on a surface portion of substrate around the device and a bonding material 118 disposed on the metal ring. A first layer of the metal ring includes a stress relief buffer layer 109DW having a higher ductility than that of the surface portion of the substrate and a width greater than the width of the bonding material. The metal ring extends laterally beyond at least one of the inner and outer edges of the bonding material. The stress relief buffer layer has a coefficient of thermal expansion greater than the coefficient of expansion of the surface portion of the substrate and less than the coefficient of expansion of the bonding material.

Abstract translation: 密封包装，其具有设置在晶片结构上的装置102和结合到装置晶片的盖结构108。 器件晶片包括：衬底104; 设置在设备周围的基板的表面部分上的金属环107DW和设置在金属环上的接合材料118。 金属环的第一层包括具有比衬底的表面部分更高的延展性的应力消除缓冲层109DW以及大于接合材料的宽度的宽度。 金属环横向延伸超出接合材料的内边缘和外边缘中的至少一个。 应力消除缓冲层的热膨胀系数大于衬底表面部分的膨胀系数，小于接合材料的膨胀系数。

公开(公告)号：EP3180288A1

公开(公告)日：2017-06-21

申请号：EP14755503.1

申请日：2014-08-11

Applicant: Raytheon Company

Inventor： KENNEDY, Adam, M. ,  DIEP, Buu, Q. ,  BLACK, Stephen, H. ,  WONG, Tse, E. ,  KOCIAN, Thomas, Allan ,  TRACY, Gregory, D.

IPC: B81C1/00 ,  H01L23/10 ,  H01L23/00

CPC classification number: H01L23/10 ,  B81B7/0051 ,  B81B2201/0207 ,  B81C2203/0109 ,  B81C2203/035 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A sealed package having a device 102 disposed on a wafer structure and a lid structure 108 bonded to the device wafer. The device wafer includes: a substrate 104; a metal ring 107DW disposed on a surface portion of substrate around the device and a bonding material 118 disposed on the metal ring. A first layer of the metal ring includes a stress relief buffer layer 109DW having a higher ductility than that of the surface portion of the substrate and a width greater than the width of the bonding material. The metal ring extends laterally beyond at least one of the inner and outer edges of the bonding material. The stress relief buffer layer has a coefficient of thermal expansion greater than the coefficient of expansion of the surface portion of the substrate and less than the coefficient of expansion of the bonding material.

Abstract translation: 具有设置在晶片结构上的器件102和结合到器件晶片的盖结构108的密封封装。 器件晶片包括：衬底104; 设置在装置周围的基板的表面部分上的金属环107DW和设置在金属环上的结合材料118。 金属环的第一层包括应力消除缓冲层109DW，该应力消除缓冲层109DW具有比衬底的表面部分更高的延展性并且宽度大于接合材料的宽度。 金属环横向地延伸超出键合材料的内边缘和外边缘中的至少一个。 应力消除缓冲层的热膨胀系数大于衬底的表面部分的膨胀系数并且小于接合材料的膨胀系数。