公开(公告)号：US20040238875A1

公开(公告)日：2004-12-02

申请号：US10883807

申请日：2004-07-06

Applicant: RENESAS TECHNOLOGY CORP.

Inventor： Hiroaki Nakai

IPC: H01L029/76

CPC classification number: G05F1/465 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A threshold compensating circuit generates a bias potential VBIAS, that is, a threshold voltage of a MOS transistor offset by a given value. A gate-source voltage having compensation for variation in threshold voltage is thus applied to a transistor. By using a differential amplifier having this transistor as a current source, a voltage down-converter less susceptible to variation in threshold voltage caused by process variation and temperature can be implemented.

Abstract translation: 阈值补偿电路产生偏置电位VBIAS，即偏置给定值的MOS晶体管的阈值电压。 因此，对晶体管施加具有对阈值电压的变化的补偿的栅源电压。 通过使用具有该晶体管作为电流源的差分放大器，可以实现对由过程变化和温度引起的阈值电压变化较小的电压下变频器。