Non-volatile semiconductor memory device attaining high data transfer rate
    1.
    发明申请
    Non-volatile semiconductor memory device attaining high data transfer rate 有权
    非易失性半导体存储器件达到高数据传输速率

    公开(公告)号:US20040196696A1

    公开(公告)日:2004-10-07

    申请号:US10665010

    申请日:2003-09-22

    Inventor: Tadaaki Yamauchi

    CPC classification number: G11C16/28

    Abstract: A reference cell is connected to two reference bit lines. In data access, when one reference bit line is driven to a selected state in response to a reference column select signal which is a decode result of a column address, a potential of a selected reference bit line is transmitted to a reference data bus line. A potential difference between the reference data bus line and a data bus line is amplified by a sense amplifier, and read data is output from an external terminal. During the access period, a reference bit line in a non-selected state is precharged to a ground potential in response to a reset signal at H level. In the next data access, when the non-selected reference bit line is selected, successive data reading is attained without waiting for a time period for precharging a bit line.

    Abstract translation: 参考单元连接到两个参考位线。 在数据访问中,当响应于作为列地址的解码结果的参考列选择信号将一个参考位线驱动到选择状态时,所选择的参考位线的电位被发送到参考数据总线。 参考数据总线与数据总线之间的电位差由读出放大器放大,从外部端子输出读取数据。 在访问期间,响应于H电平的复位信号,未选择状态的参考位线被预充电到地电位。 在接下来的数据访问中,当选择未选择的参考位线时,连续读取数据,而不用等待预定位线的时间段。

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