INGRATED RF POWER SENSOR THAT COMPENSATES FOR BIAS CHANGES
    1.
    发明申请
    INGRATED RF POWER SENSOR THAT COMPENSATES FOR BIAS CHANGES 审中-公开
    集成射频功率传感器,补偿偏置变化

    公开(公告)号:WO0156176A3

    公开(公告)日:2001-12-13

    申请号:PCT/US0100613

    申请日:2001-01-09

    CPC classification number: H03F1/0261 H03F2200/504

    Abstract: A system for controlling a bias circuit by sensing RF amplifier output power and compensating for a dominating quiescent bias current includes an amplifier transistor and two sampling transistors. The two sampling transistors are physically smaller than the amplifier transistor, and are preferably the same size. The first sampling transistor is configured to sample the same RF input signal that is amplified by the amplifier transistor. The second sampling transistor is configured to receive and amplify only a bias network signal. The bias network associated with the transistors includes a selection of components based upon operating parameters as well as actual physical sizes of the transistors. The selection of component values in association with transistor sizes is used to enable generation of a current sensing signal that is proportional to the power level of the RF output signal generated by the amplifier transistor. The bias current to the amplifier transistor is controlled by an operational amplifier that is fed with a reference voltage and the dc bias detected by the second small transistor.

    Abstract translation: 通过感测RF放大器输出功率并补偿主导静态偏置电流来控制偏置电路的系统包括放大器晶体管和两个采样晶体管。 两个采样晶体管在物理上比放大器晶体管小,并且优选具有相同的尺寸。 第一采样晶体管被配置为采样由放大器晶体管放大的相同RF输入信号。 第二采样晶体管被配置为仅接收和放大偏置网络信号。 与晶体管相关联的偏压网络包括基于操作参数以及晶体管的实际物理尺寸的部件选择。 使用与晶体管尺寸相关联的元件值的选择来使得能够生成与由放大器晶体管生成的RF输出信号的功率电平成比例的电流感测信号。 放大器晶体管的偏置电流由一个运算放大器控制,该运算放大器由参考电压供电,第二个小晶体管检测到直流偏置。

Patent Agency Ranking