公开(公告)号：WO2016100692A2

公开(公告)日：2016-06-23

申请号：PCT/US2015066424

申请日：2015-12-17

Applicant: RF MICRO DEVICES INC

Inventor： BHATTACHARJEE KUSHAL

IPC: H03H9/02

CPC classification number: H03H9/02244 ,  H01L41/047 ,  H01L41/312 ,  H01L41/33 ,  H03H3/02 ,  H03H9/02228 ,  H03H9/02275 ,  H03H9/02574 ,  H03H9/25 ,  H03H2003/027

Abstract: A micro-electrical-mechanicai system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.

Abstract translation: 微电机系统（MEMS）导波器件包括单晶压电层和至少一个被配置为将横向激发的波限制在单晶压电层中的导波限制结构。 在单晶压电层和至少一个下层之间提供键合界面。 多频器件包括布置在单晶压电层的不同厚度区域上或其中的至少一个导波限制结构的第一组电极和第二组电极。 分段压电层和分段电极层的段基本上记录在包括至少一个导波限制结构的装置中。

公开(公告)号：WO2016100692A4

公开(公告)日：2016-11-10

申请号：PCT/US2015066424

申请日：2015-12-17

Applicant: RF MICRO DEVICES INC

Inventor： BHATTACHARJEE KUSHAL

IPC: H03H9/02 ,  H03H3/02

CPC classification number: H03H9/02244 ,  H01L41/047 ,  H01L41/312 ,  H01L41/33 ,  H03H3/02 ,  H03H9/02228 ,  H03H9/02275 ,  H03H9/02574 ,  H03H9/25 ,  H03H2003/027

Abstract: A micro-electrical-mechanicai system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.