公开(公告)号：US20250112609A1

公开(公告)日：2025-04-03

申请号：US18500094

申请日：2023-11-01

Applicant: RichWave Technology Corp.

Inventor： Hao-Min Huang

IPC: H03H3/08 ,  H03H9/02

Abstract: An acoustic wave device and a manufacture method thereof are provided. The acoustic wave device comprises a first substrate, a plurality of first electrodes, a second substrate, a plurality of second electrodes and a film. The first substrate comprises a first surface and a second surface. The plurality of first electrodes are disposed on the second surface of the first substrate. The second substrate comprises a third surface and a fourth surface. The plurality of second electrodes are disposed on the third surface of the second substrate. The second surface of the first substrate faces the third surface of the second substrate, such that the plurality of first electrodes and the plurality of second electrodes are arranged between the first substrate and the second substrate. The film is disposed between the plurality of first electrodes and the plurality of second electrodes.

公开(公告)号：US20240305260A1

公开(公告)日：2024-09-12

申请号：US18506152

申请日：2023-11-10

Applicant: RichWave Technology Corp

Inventor： Hao-Min Huang

IPC: H03H3/08 ,  H03H9/25

CPC classification number: H03H3/08 ,  H03H9/25

Abstract: A manufacturing method of an acoustic wave device and an acoustic wave device are provided. The manufacturing method includes providing a piezoelectric substrate. A transducer and a solder layer are provided on the piezoelectric substrate, and the transducer is covered with a passivation layer. The method further includes forming a first photoresist layer on the piezoelectric substrate, and patterning the first photoresist layer to form a first patterned photoresist layer. The first patterned photoresist layer covers an upper surface of the passivation layer and exposes an upper surface of the solder layer. The method further includes forming a metal layer on the upper surface of the solder layer and the first patterned photoresist layer, and stripping the first patterned photoresist layer.

公开(公告)号：US20250132744A1

公开(公告)日：2025-04-24

申请号：US18510669

申请日：2023-11-16

Applicant: RichWave Technology Corp.

Inventor： Hao-Min Huang

IPC: H03H3/02 ,  H03H9/02

Abstract: An acoustic wave device and a fabricating method are provided. The acoustic wave device includes a substrate, a first frame, a first electrode, a piezoelectric layer and a second electrode. The substrate includes a first surface and a second surface opposite thereto. A reflector recess and a first recess may be depressed from the first surface. The first recess may at least partially surround the reflector recess, and may be separated from the reflector recess. The first frame is disposed in the first recess of the substrate. The first electrode is disposed on the substrate and contacts the first frame. The piezoelectric layer is disposed at least on the first electrode. The second electrode is disposed at least on the piezoelectric layer. The reflector recess of the substrate, the first electrode, the piezoelectric layer, and the second electrode at least partially overlap along a vertical direction.