公开(公告)号：US20230006029A1

公开(公告)日：2023-01-05

申请号：US17408485

申请日：2021-08-23

Applicant: RichWave Technology Corp.

Inventor： Chia-Wie Chang

IPC: H01L49/02 ,  H01L23/48 ,  H01L21/768 ,  H01L21/66

Abstract: A semiconductor device includes a compound substrate, at least one front side pattern, at least one backside pattern and at least one through-wafer via structure. The compound substrate includes a front side and a backside. The at least one front side pattern is arranged on the front side of the compound substrate. The at least one backside pattern is arranged on the backside of the compound substrate. The least one through-wafer via structure penetrates the compound substrate from the front side to the backside. The at least one front side pattern, the at least one backside pattern and the at least one through-wafer form a three-dimensional inductor structure.

公开(公告)号：US12094921B2

公开(公告)日：2024-09-17

申请号：US17408485

申请日：2021-08-23

Applicant: RichWave Technology Corp.

Inventor： Chia-Wie Chang

IPC: H01L21/768 ,  H01L21/66 ,  H01L23/48 ,  H01L23/522 ,  H01L23/64 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L28/10 ,  H01L21/76898 ,  H01L22/12 ,  H01L23/481 ,  H01L27/0688

Abstract: A semiconductor device includes a compound substrate, at least one front side pattern, at least one backside pattern and at least one through-wafer via structure. The compound substrate includes a front side and a backside. The at least one front side pattern is arranged on the front side of the compound substrate. The at least one backside pattern is arranged on the backside of the compound substrate. The least one through-wafer via structure penetrates the compound substrate from the front side to the backside. The at least one front side pattern, the at least one backside pattern and the at least one through-wafer form a three-dimensional inductor structure.