公开(公告)号：US10923365B2

公开(公告)日：2021-02-16

申请号：US16658185

申请日：2019-10-21

Applicant: RichWave Technology Corp.

Inventor： Chia-Yun Wu ,  Yu-Ling Chiu ,  Tsyr-Shyang Liou

IPC: H01L21/56 ,  H01L21/477 ,  H01L23/00 ,  H01L23/31 ,  H01L23/488

Abstract: A method for forming a connection structure is disclosed. A semiconductor structure having a first pad and a bump respectively on a bottom surface thereof is provided. A carrier having a second pad on a top surface thereof is provided. The second pad corresponds to the bump. An epoxy portion is disposed onto the second pad of the carrier. A diameter of the epoxy portion is less than or equal to a diameter of the bump. After depositing the epoxy portion, the bump is attached to the second pad via the epoxy portion.