公开(公告)号：US20200303545A1

公开(公告)日：2020-09-24

申请号：US16823337

申请日：2020-03-19

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Shyh-Chyi Wong ,  Shu-Yuan Hsu

IPC: H01L29/78 ,  H01L27/06 ,  H01L29/08

Abstract: An integrated circuit includes a logic circuit and an amplifying circuit, in particular a low-noise amplifying circuit. The amplifying circuit includes at least one first transistor. The gate of the first transistor is coupled to a signal input terminal, the source region and the drain region of the first transistor are formed respectively in the well region of the first transistor on both sides of the gate, wherein the source region is coupled to a reference voltage terminal, and the sheet resistance of the source region is lower than that of the drain region. The logic circuit includes at least one second transistor. The sheet resistances of the source region and the drain region of the second transistor are equal.

公开(公告)号：US11069806B2

公开(公告)日：2021-07-20

申请号：US16823337

申请日：2020-03-19

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Shyh-Chyi Wong ,  Shu-Yuan Hsu

IPC: H01L29/78 ,  H01L29/08 ,  H01L27/06 ,  H01L29/10 ,  H01L21/8234 ,  H01L27/088 ,  H03F3/213

Abstract: An integrated circuit includes a logic circuit and an amplifying circuit, in particular a low-noise amplifying circuit. The amplifying circuit includes at least one first transistor. The gate of the first transistor is coupled to a signal input terminal, the source region and the drain region of the first transistor are formed respectively in the well region of the first transistor on both sides of the gate, wherein the source region is coupled to a reference voltage terminal, and the sheet resistance of the source region is lower than that of the drain region. The logic circuit includes at least one second transistor. The sheet resistances of the source region and the drain region of the second transistor are equal.