公开(公告)号：US11362637B2

公开(公告)日：2022-06-14

申请号：US16231621

申请日：2018-12-24

Applicant: RichWave Technology Corp.

Inventor： Tsyr Shyang Liou

IPC: H03H9/02 ,  H03H9/13

Abstract: A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.

公开(公告)号：US20200076397A1

公开(公告)日：2020-03-05

申请号：US16231621

申请日：2018-12-24

Applicant: RichWave Technology Corp.

Inventor： Tsyr Shyang Liou

IPC: H03H9/02 ,  H03H9/13

Abstract: A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.

公开(公告)号：US11646712B2

公开(公告)日：2023-05-09

申请号：US17692132

申请日：2022-03-10

Applicant: RichWave Technology Corp.

Inventor： Tsyr Shyang Liou

IPC: H03H9/02 ,  H03H9/13

CPC classification number: H03H9/02023 ,  H03H9/131

Abstract: A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.

公开(公告)号：US20220200562A1

公开(公告)日：2022-06-23

申请号：US17692132

申请日：2022-03-10

Applicant: RichWave Technology Corp.

Inventor： Tsyr Shyang Liou

IPC: H03H9/02 ,  H03H9/13

Abstract: A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.