公开(公告)号：AU2003251536A1

公开(公告)日：2004-01-06

申请号：AU2003251536

申请日：2003-06-17

Applicant: SAINT GOBAIN CERAMICS

Inventor： NARENDAR YESHWANTH ,  MASTROVITO EDMUND L

IPC: C04B35/573 ,  C04B35/80 ,  C04B38/06 ,  C30B35/00

Abstract: A method is disclosed for forming a silicon carbide component. The method calls for providing a preform, including carbon, purifying the preform to remove impurities to form a purified preform, and exposing the purified preform to a molten infiltrant which includes silicon. According to the foregoing method, the molten infiltrant reacts with the carbon to form silicon carbide. The silicon carbide component formed according to this method may be particularly suitable for use in semiconductor fabrication processes, as a semiconductor processing component.