公开(公告)号：US20250105127A1

公开(公告)日：2025-03-27

申请号：US18659864

申请日：2024-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dohyun KIM ,  Yeongseon KIM ,  JUHYEON KIM ,  HYOEUN KIM ,  SUNKYOUNG SEO ,  Haksun LEE

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L23/544 ,  H01L25/10

Abstract: A semiconductor package may include a first dielectric structure, a first pad in the first dielectric structure, a first semiconductor chip provided on the first dielectric structure, and a bump electrically connected to the first pad. The first semiconductor chip includes: a first substrate; a first chip dielectric layer in contact with the first dielectric structure; and a first chip pad in contact with a top surface of the first pad. The first pad may be provided between the bump and the first chip of the first semiconductor chip. The first pad may include a first conductive layer and a second conductive layer covered by the first conductive layer. The bump may be positioned closer to the first conductive layer than to the second conductive layer.

公开(公告)号：US20250149479A1

公开(公告)日：2025-05-08

申请号：US18660617

申请日：2024-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haksun LEE ,  Dohyun Kim ,  Yeongseon Kim ,  Juhyeon Kim ,  Hyoeun Kim ,  Sunkyoung Seo ,  Chajea Jo

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/10

Abstract: A semiconductor chip includes: a substrate; a plurality of upper pads on the substrate, the plurality of upper pads including a first group of the upper pads and a second group of the upper pads; a buffer layer covering a side surface of the first group of the upper pads; and an insulating layer surrounding a side surface of the second group of the upper pads and a side surface of the buffer layer on the substrate, wherein the buffer layer includes a first material having a first Young's modulus smaller than a second Young's modulus of a second material in the plurality of upper pads.