中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.025 seconds)

    ELECTRONIC DEVICE HAVING LOOP ANTENNA
    2.
    发明申请
    ELECTRONIC DEVICE HAVING LOOP ANTENNA 审中-公开

    公开(公告)号：WO2019009549A1

    公开(公告)日：2019-01-10

    申请号：PCT/KR2018/007109

    申请日：2018-06-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： LEE, Woosup ,  PARK, Jungsik ,  LEE, Gaeun ,  LEE, Soyoung

    IPC: H01Q7/06 ,  H04M1/02 ,  H01Q1/24 ,  H01Q1/38

    Abstract: An electronic device is provided The electronic device includes a housing including a first surface facing a first direction, a second surface facing a second direction opposite to the first direction, and a side member configured to enclose at least some of a space between the first surface and the second surface, a first conductive coil positioned inside the housing and configured to form a first magnetic field in a direction substantially perpendicular to the first direction or the second direction, a second conductive coil spaced apart from the first conductive coil within the housing and configured to form a second magnetic field in a direction substantially parallel to the first direction or the second direction, a communication circuit positioned inside the housing and electrically connected to the first and second conductive coils, and a processor positioned inside the housing and electrically connected to the communication circuit.

    GRIP DETECTION METHOD AND ELECTRONIC DEVICE SUPPORTING SAME
    4.
    发明申请
    GRIP DETECTION METHOD AND ELECTRONIC DEVICE SUPPORTING SAME 审中-公开

    公开(公告)号：WO2021091264A1

    公开(公告)日：2021-05-14

    申请号：PCT/KR2020/015419

    申请日：2020-11-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： KIM, Hyunsoo ,  LEE, Gaeun ,  SON, Dongil

    IPC: H04M1/02 ,  H02J50/20 ,  G01R27/26 ,  H05K1/02

    Abstract: An electronic device includes a housing including a front surface, a rear surface, and a side surface which at least partially surrounds a space between the front surface and the rear surface, a first antenna disposed in the space, a second antenna disposed substantially in parallel with the rear surface in the space and formed in a coil shape, a conductor spaced a predetermined distance apart from a partial region of the second antenna substantially in parallel therewith and at least partially overlapping the partial region, a sensor electrically connected to the conductor, a communication circuit electrically connected to the first antenna, and a processor electrically connected to the sensor and the communication circuit, and the processor is configured to acquire a capacitance value related to the conductor, and reduce an intensity of a signal outputted through the first antenna according to the acquired capacitance value.

    SEMICONDUCTOR DEVICE
    6.
    发明公开
    SEMICONDUCTOR DEVICE 审中-实审

    公开(公告)号：EP4383978A1

    公开(公告)日：2024-06-12

    申请号：EP23212528.6

    申请日：2023-11-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： AN, Hyeri ,  PARK, Dongsik ,  SHIN, Sooho ,  PARK, Joonsuk ,  PARK, Keonhee ,  LEE, Gaeun ,  CHANG, Jihoon ,  CHO, Yujin ,  CHO, Hana

    IPC: H10B12/00

    CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/05 ,  H01L28/60 ,  H01L28/90 ,  H01L28/75

    Abstract: A semiconductor device includes a switching element, and a data storage structure (CAP) electrically connected to the switching element. The data storage structure (CAP) includes first electrodes (170), a second electrode (168), and a dielectric layer between the first electrodes (170) and the second electrode (168). The second electrode (168) includes a compound semiconductor layer (168a) doped with an impurity element, the compound semiconductor layer (168a) includes two or more elements and includes a semiconductor material doped with the impurity element, the two or more elements include a first element and a second element, the first element is silicon (Si), and a concentration of the impurity element in the compound semiconductor layer (168a) is in a range of about 0.1 at % to about 5 at %, and a concentration of the first element in the compound semiconductor layer (168a) is in a range of about 10 at % to about 15 at %.

Patent Agency Ranking