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    2.
    发明专利
    未知

    公开(公告)号：DE69926972D1

    公开(公告)日：2005-10-06

    申请号：DE69926972

    申请日：1999-03-17

    Applicant: SEIKO EPSON CORP

    Inventor： KIMURA MUTSUMI ,  MATSUEDA YOJIRO ,  OZAWA TOKUROH ,  QUINN MICHAEL

    IPC: G02F1/136 ,  G02F1/1368 ,  G09G3/00 ,  G09G3/20 ,  G09G3/30 ,  G09G3/32 ,  G09G3/36 ,  H01L21/768 ,  H01L29/786

    Abstract: A transistor circuit (100) including a driving transistor (110) where conductance between a source and a drain is controlled in response to voltage, and a compensating transistor (120) where a gate is connected to one of a source and a drain and wherein the compensating transistor is connected so as to supply input signals to the gate of the driving transistor through the source and drain. In a transistor circuit where conductance control in a driving transistor is carried out in response to the voltage of input signals, it is possible to control the conductance by using input signals of a relatively low voltage and a variance in threshold characteristics of driving transistors is compensated. With this transistor circuit, a display panel that can display picture images with reduced uneven brightness is achieved.

    3.
    发明专利
    未知

    公开(公告)号：DE69431636D1

    公开(公告)日：2002-12-05

    申请号：DE69431636

    申请日：1994-07-26

    Applicant: SEIKO EPSON CORP

    Inventor： MIYASAKA MITSUTOSHI ,  MATSUEDA YOJIRO ,  TAKENAKA SATOSHI

    IPC: G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  G02F1/136

    Abstract: An objective of the present invention is to provide a high-performance thin-film semiconductor device and a simple fabrication method therefor. After a silicon film is deposited at 580 DEG C or less and at a deposition rate of 6 ANGSTROM /minute or more, thermal oxidation is performed. This ensures an easy and simple fabrication of a high-performance thin-film semiconductor device. A further objective of the present invention is to implement a thin-film semiconductor device capable of low-voltage, high-speed drive. The short-channel type of TFT circuit with an LDD structure can reduce a voltage, increase speed and restrain the power consumption, enabling a higher breakdown voltage. Speeds can be further accelerated by optimizing the maximum impurity concentration of an LDD portion, that of source and drain portions, the LDD length, and the channel length. A display device or display system using these TFTs can be configured such that drive signals are at or below the TTL level.

    5.
    发明专利
    未知

    公开(公告)号：DE68915413T2

    公开(公告)日：1994-11-17

    申请号：DE68915413

    申请日：1989-12-11

    Applicant: SEIKO EPSON CORP

    Inventor： MATSUEDA YOJIRO

    IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/82 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    Abstract: An active matrix type display device has a plurality of scanning lines (Y1, ... Yn), a plurality of signal lines (X1, ... Xm), and pixels (10, 30, 40, 50, 60) disposed at inter-sections of the scanning lines and the signal lines for providing a display. Each pixel is driven by way of a respective plurality of thin film transistors (1, 2, 23, 24, 31, 32, 33, 41, 42, 51, 52) which are connected to an associated pixel electrode (P). Each pixel electrode also has connected thereto a respective plurality of storage capacitors (5, 6, 25, 26, 27, 37, 38, 45, 46, 47, 55, 56, 57) arranged in parallel. Thus, if a thin film transistor or a storage capacitor connected to one of the pixel electrodes is defective, the defect in the associated pixel can be relieved simply by disconnecting as a pair both one of the thin film transistors and at least one of the storage capacitors so long as the pair includes the defective element.

    7.
    发明专利
    未知

    公开(公告)号：DE69838277D1

    公开(公告)日：2007-10-04

    申请号：DE69838277

    申请日：1998-04-16

    Applicant: SEIKO EPSON CORP

    Inventor： MATSUEDA YOJIRO ,  OZAWA TOKUROH

    IPC: G02F1/133 ,  G09G3/20 ,  G09G3/36

    Abstract: A driving circuit of an electro-optical device such as a liquid crystal device is compatible with digital image signals and implements a DA converting function and a gamma correcting function by a relatively simple and small-scale circuit configuration. The driving circuit of the liquid crystal device is provided with a DAC 3 for issuing a voltage signal Vc corresponding to an N bits of digital image data DA that indicate gray scale to a signal line of the liquid crystal device. Depending on whether the value of a most significant bit is "0" or "1," the DAC 3 brings the output driving voltage characteristics close to the optical characteristics of the liquid crystal device according to a pair of first or second reference voltage so as to make a gamma correction.

    9.
    发明专利
    未知

    公开(公告)号：DE60230882D1

    公开(公告)日：2009-03-05

    申请号：DE60230882

    申请日：2002-09-13

    Applicant: SEIKO EPSON CORP

    Inventor： MATSUEDA YOJIRO

    IPC: G09F9/30 ,  G02F1/1345 ,  H01L27/32

    Abstract: An organic electroluminescent display device includes: a substrate (64); a plurality of operating elements (50) provided in an operating region (54) of the substrate; a first wiring pattern (10) which is provided outside the operating region (54) in the substrate so that the first wiring pattern (10) is longer than one side of the operating region; a first electrode (72) formed in a layer different from the first wiring pattern (10), partially overlapping the first wiring pattern, and supplying electrical current to the operating elements; and a conductive section (70) provided in a region in which the first wiring pattern partially overlaps the first electrode, electrically connecting the first wiring pattern (10) to the first electrode (72), thereby reducing the resistance between the first wiring pattern (10) and the first electrode (72) to the flow of current.

    10.
    发明专利
    未知

    公开(公告)号：DE69926972T2

    公开(公告)日：2006-03-09

    申请号：DE69926972

    申请日：1999-03-17

    Applicant: SEIKO EPSON CORP

    Inventor： KIMURA MUTSUMI ,  MATSUEDA YOJIRO ,  OZAWA TOKUROH ,  QUINN MICHAEL

    IPC: G02F1/136 ,  G02F1/1368 ,  G09G3/00 ,  G09G3/20 ,  G09G3/30 ,  G09G3/32 ,  G09G3/36 ,  H01L21/768 ,  H01L29/786

    Abstract: A transistor circuit (100) including a driving transistor (110) where conductance between a source and a drain is controlled in response to voltage, and a compensating transistor (120) where a gate is connected to one of a source and a drain and wherein the compensating transistor is connected so as to supply input signals to the gate of the driving transistor through the source and drain. In a transistor circuit where conductance control in a driving transistor is carried out in response to the voltage of input signals, it is possible to control the conductance by using input signals of a relatively low voltage and a variance in threshold characteristics of driving transistors is compensated. With this transistor circuit, a display panel that can display picture images with reduced uneven brightness is achieved.

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