Abstract:
PROBLEM TO BE SOLVED: To provide an electro-optic device having a sealed structure with high reliability, in which an electro-optic material can be sealed in good conditions between substrates even when external force due to bending is applied to the device, and to provide a method for manufacturing an electro-optic device, and electronic equipment.SOLUTION: An electro-optic device 100 includes a first substrate 300 and a second substrate 310 each having flexibility and disposed to oppose to each other, an electro-optic layer 32A disposed between the first substrate 300 and the second substrate 310, an injection hole H formed in one of the first substrate 300 and the second substrate 310 and for injecting the electro-optic layer 32A, and a sealing material 110 sealing the electro-optic layer 32A injected through the injection hole H between the first substrate 300 and the second substrate 310. The sealing material 110 is formed in a state of reaching the other substrate 310 where the injection hole H is not formed.
Abstract:
PROBLEM TO BE SOLVED: To provide an electrophoretic display device capable of displaying a full-colored image or an image conforming to the full-colored image and of displaying a high contrast image, and further to provide a driving method thereof and an electronic apparatus.SOLUTION: An electrophoretic display device according to the present invention comprises: a first substrate and a second substrate that are disposed opposite to each other; a plurality of first charged particles colored with a first color and a plurality of second charged particles colored with a second color that are disposed between the first substrate and the second substrate; an electrophoretic layer that has a dispersant holding the plurality of first charged particles and the plurality of second charged particles; a first pixel electrode and a second pixel electrode that are disposed at an electrophoretic layer side of the first substrate and are driven independently from each other; a counter electrode that is disposed at an electrophoretic layer side of the second substrate; and a reflective electrode that is disposed at a position of a first substrate side from the electrophoretic layer. The first charged particles have absorbency in wavelength regions other than a first wavelength region while having permeability in the first wavelength region, and the second charged particles have the absorbency in wavelength regions other than a second wavelength region while having reflectivity in the second wavelength region.
Abstract:
PROBLEM TO BE SOLVED: To provide a driving method of an electrophoretic display device capable of suppressing occurrence of image persistence or a residual image.SOLUTION: A driving method of an electrophoretic display device according to the present invention has a first substrate and a second substrate holding an electrophoretic element having electrophoretic particles and a dispersant and opposing to each other, is provided with a display on which a plurality of pixels are arranged and includes a first electrode and a second electrode for applying a voltage to the electrophoretic element formed on each of the plurality of pixels. The driving method thereof further has a particle floating step that applies the voltage to the electrophoretic element so as to cause at least a part of the electrophoretic particles absorbed by the first electrode or the second electrode to float in the dispersant.
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate for an electro-optic device which can reliably suppress the occurrence of display unevenness and uses low consumption energy by providing a storage capacitor having a sufficient capacitance value.SOLUTION: In a substrate 30 for an electro-optic device of the present invention, first and second TFTs 72, 73 include gate electrodes 74, 75 made of a first conductive film, a gate insulating film 83 made of a first insulating film, a semiconductor layer 76, and source and drain electrodes 77, 79 made of a second conductive film. A storage capacitor 71 is composed of the drain electrode 79 made of the second conductive film, a first passivation film 85A made of a second insulating film, and a storage-capacitor upper electrode 80 made of a third conductive film, which covers the drain electrode 79 with the first passivation film 85A interposed therebetween. A second passivation film 85B and a planarizing film 92 are formed to cover the first and second TFTs 72, 73, and a pixel electrode 35 is formed on the planarizing film 92.
Abstract:
PROBLEM TO BE SOLVED: To provide an electrophoretic display device and an electronic apparatus which are capable of performing normal display by preventing waveform distortion from occurring in voltages to be applied to partitions and of performing voltage control for an electrophoretic material of each color. SOLUTION: The electrophoretic display device has electrophoretic elements held between an element substrate and a counter substrate and includes: the electrophoretic elements different in color type among sub-pixels 40r, 40g, and 40b; pixel electrodes; selection transistors to be connected to the pixel electrodes; and partitions 72R, 72G, 72B which are disposed between first and second substrates and are conductive. One pixel is composed of at least two colors sub-pixels, and voltage lines 70R, 70G, and 70B to be connected to the partitions 72R, 72G, and 72B are provided on a surface on the electrophoretic element side of the element substrate. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To prevent a deflection of a substrate while meeting requirements of resource saving and cost reduction for a substrate for a semiconductor device. SOLUTION: The substrate for the semiconductor device includes, on the substrate (10): a transistor (30) including a semiconductor layer (30a) and a gate electrode (30b) arranged to oppose the semiconductor layer (30a) via a gate insulating film (30c); and a base film (12) formed below the semiconductor layer as a base of the transistor and formed in a shape of an island so as to at least partially overlap the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To attain downsizing of a piezoelectric oscillator having a piezoelectric vibrating piece and an IC component in a package base. SOLUTION: There is provided the piezoelectric oscillator 10, wherein a piezoelectric vibrating piece 30 and an IC component 50 are housed in a package base 20. The piezoelectric vibrating piece 30 includes a thin portion 32 which is made of a piezoelectric material and in which an exciting electrode 36 is formed, and a thick portion 34 which is formed integrally with the thin portion 32. In the IC component 50, a plurality of pads 51 are formed on its active surface, a lower surface of the thick portion 34 in the piezoelectric vibrating piece 30 is mounted on a bottom surface of the package base 20 and the plurality of pads 51 of the IC component 50 are mounted with a mounting electrode 29 formed on an upper surface of a step 28 at a higher position than the bottom surface of the package base 20 and a connecting electrode 38 formed on an upper surface of the thick portion 34 in the piezoelectric vibrating piece 30. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electronic circuit which can be constructed using a simple circuit, can AC drive an element without the use of special alternating current power supply, prolongs the lifetime of the element and lowers the production cost, and to provide a drive method of the electronic circuit, an electrooptical device, a driving method of the electrooptical device, and an electronic apparatus. SOLUTION: Each unit circuit has a transistor Qs, an organic EL element 31 connected to it, and a holding capacitor Cp for reverse bias. A terminal b of the holding capacitor Cp is connected to a scanning line (one of Y1-Ym), to which the gate of the corresponding transistor Qs is also connected. Signals sequentially applied to the scanning line contain voltages of GND, Vg1 and -Vg2, and the organic EL element 31 is AC driven by the voltages of these 3 levels. When the transistor Qs is brought to an ON-state, in each selection period wherein the voltage Vg1 is applied to the scanning line, the organic EL element is biased in the forward direction, and emits a light. When the voltage -Vg2 is applied to the scanning line, the organic EL element is biased in the reverse direction. COPYRIGHT: (C)2010,JPO&INPIT