公开(公告)号：WO2014163323A1

公开(公告)日：2014-10-09

申请号：PCT/KR2014/002568

申请日：2014-03-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： HAN, Chang Suk ,  KIM, Hwa Mok ,  KO, Mi So ,  LEE, A Ram Cha ,  SUH, Dae Woong

IPC: H01L33/12 ,  H01L33/04 ,  H01L33/32 ,  H01L21/20

CPC classification number: H01L33/06 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including Al x Ga (1-x) N on a substrate, forming a sacrificial layer including Al z Ga (1-z) N on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type Al u Ga (1-u) N (0

Abstract translation: 公开了一种UV发光器件及其制造方法。 该方法包括在衬底上形成包括Al x Ga（1-x）N的第一超晶格层，在第一超晶格层上形成包含AlzGa（1-z）N的牺牲层，部分去除牺牲层，形成 外延层，并且将所述衬底与所述外延层分离，其中所述牺牲层包括空隙，所述衬底在所述牺牲层处与所述外延层分离，并且形成外延层包括形成n型半导体层，所述n型半导体层包括 n型AluGa（1-u）N（0

公开(公告)号：WO2014003402A1

公开(公告)日：2014-01-03

申请号：PCT/KR2013/005576

申请日：2013-06-25

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： HAN, Chang Suk ,  KIM, Hwa Mok ,  CHOI, Hyo Shik ,  KO, Mi So ,  LEE, A Ram Cha ,  HWANG, Jung Hwan

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L33/04 ,  H01L33/06 ,  H01L33/32

Abstract: A near ultraviolet light emitting device is disclosed. The light emitting device includes an n-type contact layer including a gallium nitride layer, a p-type contact layer including a gallium nitride layer, and an active region of a multiple quantum well structure disposed between the n-type contact layer and the p-type contact layer, wherein the active region emits near ultraviolet light in a wavelength range from 360 nm to 390 nm.

Abstract translation: 公开了近紫外光发射装置。 发光器件包括包括氮化镓层的n型接触层，包括氮化镓层的p型接触层和设置在n型接触层和p型之间的多量子阱结构的有源区 型接触层，其中有源区在360nm至390nm的波长范围内发射近紫外光。