公开(公告)号：WO2014204271A1

公开(公告)日：2014-12-24

申请号：PCT/KR2014/005482

申请日：2014-06-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Ye Seul ,  KIM, Kyoung Wan ,  RYU, Yong Woo ,  LEE, Jin Woong ,  LIM, Hyoung Jin

IPC: H01L33/22 ,  H01L33/20

CPC classification number: H01L33/22 ,  H01L33/20

Abstract: Disclosed herein is a light emitting diode chip. The light emitting diode chip includes a substrate, and a semiconductor stack, which is formed on the substrate and includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, the semiconductor stack having first side surface and second side surface disposed under the first side surface, wherein the first side surface is an outer side surface of the semiconductor stack to mesa-etching, the second side surface is an outer side surface of the first conductive type semiconductor layer, and at least one of the first side surface and second side surface has a convex pattern. Accordingly, the light emitting diode chip of the present invention can improve lateral light extraction by the convex pattern.

Abstract translation: 这里公开了一种发光二极管芯片。 发光二极管芯片包括形成在基板上并包括第一导电类型半导体层，有源层和第二导电类型半导体层的基板和半导体堆叠，所述半导体堆叠具有第一侧表面和第二侧 表面设置在第一侧表面下方，其中第一侧表面是半导体叠层的外侧表面以进行台面蚀刻，第二侧表面是第一导电类型半导体层的外侧表面，并且至少一个 第一侧表面和第二侧表面具有凸形图案。 因此，本发明的发光二极管芯片可以通过凸形图案改善横向光提取。

公开(公告)号：EP3886173A1

公开(公告)日：2021-09-29

申请号：EP19887869.6

申请日：2019-11-19

Applicant: Seoul Viosys Co., Ltd

Inventor： LEE, Jin Woong ,  KIM, Kyoung Wan

IPC: H01L27/15 ,  H01L33/32 ,  H01L33/36 ,  H01L33/10 ,  H01L21/268 ,  H01L21/78 ,  H01L21/76

Abstract: A light emitting module may include a mounting substrate, a plurality of light emitting chips and a plurality of conductive adhesion parts. Each of the light emitting chips may include: a first substrate; a first light emitting unit; a second substrate isolated from the first substrate; and a second light emitting unit. One side surface of the first substrate may include a first modified surface, and one side surface of the second substrate, facing the one side surface of the first substrate, may include a second modified surface. The first modified surface may include modified regions extended in the thickness direction of the first substrate and ruptured regions disposed between the respective modified regions, and the second modified surface may include modified regions extended in the thickness direction of the second substrate and ruptured regions disposed between the respective modified regions.

公开(公告)号：EP3346511A1

公开(公告)日：2018-07-11

申请号：EP16842174.1

申请日：2016-08-23

Applicant: Seoul Viosys Co. Ltd.

Inventor： LEE, Jin Woong ,  SHIN, Chan Seob ,  LEE, Keum Ju ,  LEE, Seom Geun ,  YANG, Myoung Hak

IPC: H01L33/42 ,  H01L33/46 ,  H01L33/00

CPC classification number: H01L33/42 ,  G02F1/133603 ,  H01L33/00 ,  H01L33/10 ,  H01L33/325 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.