公开(公告)号：WO2016048079A1

公开(公告)日：2016-03-31

申请号：PCT/KR2015/010137

申请日：2015-09-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Joon Hee ,  LEE, Mi Hee

IPC: H01L33/36

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0016

Abstract: A light emitting diode and a method for fabricating the same. The light emitting diode includes a light emitting structure including a second conductive type semiconductor layer, a first conductive type semiconductor layer and an active layer, the light emitting structure having a second hole formed through the active layer and the second conductive type semiconductor layer to expose the first conductive type semiconductor layer; a reflective metal layer; a cover metal layer; a first insulation layer; an electrode layer disposed under the first insulation layer and covering the first insulation layer while filling a second hole; and an electrode pad disposed on the light emitting structure, wherein the light emitting structure has a first hole formed above the cover metal layer, and the electrode pad is formed on the light emitting structure above the cover metal layer.

Abstract translation: 发光二极管及其制造方法。 发光二极管包括具有第二导电型半导体层，第一导电类型半导体层和有源层的发光结构，该发光结构具有通过有源层形成的第二孔和第二导电型半导体层， 第一导电型半导体层; 反射金属层; 覆盖金属层; 第一绝缘层; 电极层，设置在所述第一绝缘层的下方，并且在填充第二孔时覆盖所述第一绝缘层; 以及设置在所述发光结构上的电极焊盘，其中所述发光结构具有形成在所述覆盖金属层上方的第一孔，并且所述电极焊盘形成在所述覆盖金属层上方的所述发光结构上。